NTTFS4C25NTAG [ONSEMI]
单 N 沟道，功率 MOSFET，30V，27A，17mΩ;
| 型号： | NTTFS4C25NTAG |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，30V，27A，17mΩ |
| 文件： | 总8页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTFS4C25N
MOSFET – Power, Single,
N-Channel, m8FL
30 V, 27 A
Features
• Low R
to Minimize Conduction Losses
DS(on)
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• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
17 mW @ 10 V
30 V
27 A
26.5 mW @ 4.5 V
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
N−Channel MOSFET
D (5−8)
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
30
20
V
V
A
DSS
G (4)
Gate−to−Source Voltage
V
GS
Continuous Drain
I
D
T = 25°C
7.7
5.8
1.63
A
S (1,2,3)
Current R
(Note 1)
q
JA
T = 85°C
A
Power Dissipation R
(Note 1)
T = 25°C
A
P
W
A
q
D
JA
MARKING DIAGRAM
1
Continuous Drain
I
D
T = 25°C
A
12.2
9.1
1
S
S
S
G
D
D
D
D
Current R
(Note 1)
≤ 10 s
q
JA
4C25
AYWWG
G
WDFN8
(m8FL)
T = 85°C
A
CASE 511AB
Power Dissipation
≤ 10 s (Note 1)
T = 25°C
P
I
4.1
W
A
A
D
D
D
R
Steady
State
q
JA
Continuous Drain
Current R (Note 2)
T = 25°C
A
5.0
3.8
D
4C25
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
q
JA
T = 85°C
A
Power Dissipation
(Note 2)
T = 25°C
A
P
I
0.69
W
A
R
q
JA
Continuous Drain
Current R (Note 1)
T
C
T
C
T
C
= 25°C
= 85°C
= 25°C
27
20
D
(Note: Microdot may be in either location)
q
JC
Power Dissipation
(Note 1)
P
20.2
W
R
q
JC
ORDERING INFORMATION
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
81
A
†
A
p
Device
Package
Shipping
Operating Junction and Storage Temperature
T ,
stg
−55 to
°C
J
NTTFS4C25NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
T
+150
Source Current (Body Diode)
I
S
17
6.0
13
A
NTTFS4C25NTWG WDFN8
5000 / Tape &
Reel
Drain to Source dV/dt
dV/dt
V/ns
mJ
(Pb−Free)
Single Pulse Drain−to−Source Avalanche Energy
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(T = 25°C, V = 50 V, V = 10 V,
J
DD
GS
I = 16 A , L = 0.1 mH, R = 25 W) (Note 3)
L
pk
G
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2019 − Rev. 0
NTTFS4C25N/D
NTTFS4C25N
3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,
J
V
GS
= 10 V, I = 11 Apk, E = 6 mJ.
L AS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
6.2
Unit
Junction−to−Case (Drain)
R
q
JC
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
R
76.7
210
q
JA
°C/W
R
q
JA
R
30.8
q
JA
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 250 mA
30
34
V
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
(transient)
V
V
= 0 V, I
= 4.4 A,
= 100 ns
(BR)DSSt
GS
case
D(aval)
T
= 25°C, t
transient
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
15.3
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
100
nA
GSS
DS
GS
V
V
= V , I = 250 mA
1.3
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
4.5
13
mV/°C
GS(TH)
J
R
V
= 10 V
I
D
= 10 A
= 9 A
17
DS(on)
GS
mW
V
GS
= 4.5 V
I
D
21
26.5
Forward Transconductance
Gate Resistance
g
V
DS
= 1.5 V, I = 15 A
23
S
FS
D
R
T = 25°C
A
1.0
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
500
295
85
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.170
5.1
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Q
0.9
G(TH)
Q
1.7
V
GS
= 4.5 V, V = 15 V; I = 20 A
GS
GD
GP
DS
D
Q
V
2.7
3.3
V
Total Gate Charge
Q
V
GS
= 10 V, V = 15 V; I = 20 A
10.3
nC
G(TOT)
DS
D
SWITCHING CHARACTERISTICS (Note 7)
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS4C25N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
8.0
32
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 10 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
10
d(OFF)
t
f
3.0
4.0
25
Turn−On Delay Time
Rise Time
t
d(ON)
t
r
V
= 10 V, V = 15 V,
DS
GS
ns
V
I
D
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
13
d(OFF)
t
f
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.87
0.75
18.2
9.8
1.2
SD
RR
J
V
S
= 0 V,
= 10 A
GS
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
b
8.4
Reverse Recovery Charge
Q
5.7
nC
RR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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3
NTTFS4C25N
TYPICAL CHARACTERISTICS
40
35
30
25
20
15
10
40
4.5 V to 10 V
V
= 5 V
DS
4.2 V
4.0 V
3.8 V
30
20
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
T = 125°C
J
10
0
T = 25°C
J
5
0
T = −55°C
J
T = 25°C
J
0
1
2
3
4
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.052
0.042
I = 30 A
D
0.045
0.035
0.025
T = 25°C
J
V
GS
= 4.5 V
0.032
0.022
0.012
0.002
0.015
0.005
V
GS
= 10 V
30
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
10
20
40
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
1000
100
1.7
1.6
V
GS
= 0 V
I
V
= 30 A
D
= 10 V
T = 150°C
GS
J
1.5
1.4
T = 125°C
J
1.3
1.2
1.1
1.0
0.9
T = 85°C
J
10
1
0.8
0.7
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NTTFS4C25N
TYPICAL CHARACTERISTICS
800
700
600
500
400
300
200
10
Q
T
V
= 0 V
GS
T = 25°C
J
8
6
C
iss
C
oss
Q
Q
gd
gs
4
T = 25°C
J
V
V
= 15 V
= 10 V
DD
2
0
C
rss
GS
100
0
I
D
= 30 A
0
5
10
15
20
25
30
0
2
4
6
8
10
12
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18
16
14
12
10
8
100
10
V
GS
= 0 V
t
f
t
r
t
t
d(on)
d(off)
T = 25°C
J
T = 125°C
J
1
6
V
= 15 V
= 15 A
= 10 V
DD
4
I
D
2
0
V
GS
0.1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1
6
5
4
3
2
I
= 11 A
D
10 ms
100 ms
1 ms
10 ms
0 V < V < 10 V
Single Pulse
GS
T
C
= 25°C
0.1
R
Limit
DS(on)
dc
1
0
Thermal Limit
Package Limit
0.01
0.01
0.1
1
10
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
NTTFS4C25N
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 50%
20%
10%
5%
2%
1%
1
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
100
30
25
20
15
10
T = 85°C
A
T = 25°C
A
10
5
0
1
1.E−08 1.E−07
0
5
10
15
20
(A)
25
30
35
40
1.E−06
1.E−05
1.E−04 1.E−03
I
PULSE WIDTH (SECONDS)
D
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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