NTTFS5D1N06HLTAG [ONSEMI]
Single N−Channel Power MOSFET 60V, 78A, 5.2mΩ;型号: | NTTFS5D1N06HLTAG |
厂家: | ONSEMI |
描述: | Single N−Channel Power MOSFET 60V, 78A, 5.2mΩ |
文件: | 总8页 (文件大小:302K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET - Power,
N-Channel, Shielded Gate
60 V, 5.2 mW, 78 A
NTTFS5D1N06HL
General Description
www.onsemi.com
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced MOSFET process that incorporates Shielded Gate
technology. This process has been optimized to minimize on−state
resistance and yet maintain superior switching performance with best
in class soft body diode.
ELECTRICAL CONNECTION
S
S
D
D
D
Features
• Shielded Gate MOSFET Technology
S
• Max r
• Max r
= 5.2 mW at V = 10 V, I = 16 A
GS D
= 7.1 mW at V = 4.5 V, I = 13 A
DS(on)
DS(on)
GS
D
G
D
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
N-Channel MOSFET
• RoHS Compliant
8 7 6 5
D D D D
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
Pin 1
1 2 3 4
Top
G S S S
Bottom
Pin 1
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
MARKING DIAGRAM
1N06
AYWW
1N06
= Device Code
A
= Assembly Location
Y
= Year Code
WW
= Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2
of this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
Oct0ber, 2019 − Rev. 1
NTTFS5D1N06HL/D
NTTFS5D1N06HL
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Ratings
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
60
20
V
I
Drain Current
−Continuous
T
T
= 25°C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
78
A
D
C
C
−Continuous
−Continuous
−Pulsed
= 100°C
49
T = 25°C
A
18
216
E
AS
Single Pulse Avalanche Energy
Power Dissipation
72
63
mJ
W
P
T = 25°C
C
D
Power Dissipation
T = 25°C
A
(Note 1a)
3.2
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
Unit
2
°C/W
R
q
JC
R
(Note 1a)
39
q
JA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
1500 Units
1N06
NTTFS5D1N06HL
WDFN8 (3.3x3.3)
7’’
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage I = 250 mA, V
= 0 V
GS
60
V
DSS
D
Breakdown Voltage
Temperature Coefficient
I
D
= 250 mA, referenced to 25°C
37
mV/°C
DBVDSS
DTJ
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 48 V, V = 0 V
10
mA
DSS
GSS
DS
GS
I
= +20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 80 mA
1.2
1.6
2.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 80 mA, referenced to 25°C
−5.2
mV/°C
DVGS(th)
DTJ
D
r
Static Drain to Source On
Resistance
V
V
= 10 V, I = 16 A
4.4
5.6
5.2
7.1
mW
pF
W
DS(on)
GS
D
= 4.5 V, I = 13 A
GS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Output Capacitance
V
DS
= 30 V, V = 0 V,
1610
313
12.2
0.9
ISS
GS
f = 1 MHz
C
OSS
RSS
C
Reverse Transfer Capacitance
Gate Resistance
R
G
www.onsemi.com
2
NTTFS5D1N06HL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
t
Turn*On Delay Time
Rise Time
Turn*Off Delay Time
Fall Time
V
V
= 30 V, I = 16 A,
14
24
ns
d(ON)
DD
D
= 4.5 V, R
= 2.5 W
GS
GEN
t
rd(ON)
t
41.3
12.2
22.5
10.3
5
d(OFF)
t
f
Q
Q
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
= 0V to 10 V
= 0V to 4.5 V
nC
g
g
GS
V
GS
Q
V
I
= 30 V
gs
gd
DD
D
= 16 A
Q
3
DRAIN−SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward
Voltage
V
= 0 V, I = 16 A(Note 2)
0.8
0.66
35.1
37
1.2
V
SD
GS
S
V
GS
= 0 V, I = 16 A(Note 2)
S
t
Reverse Recovery Time
I = 16 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 53°C/W when mounted on
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 72 mJ is based on starting T = 25_C; L = 1 mH, I = 12 A, V = 48 V, V = 10 V. 100% test at L = 1 mH, I = 12 A.
AS
J
AS
DD
GS
AS
4. Pulsed I please refer to SOA graph for more details.
D
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal
& electro−mechanical application board design.
www.onsemi.com
3
NTTFS5D1N06HL
TYPICAL CHARACTERISTICS
80
88
80
72
64
56
48
40
32
24
16
8
10 V to 3.7 V
V
DS
= 10 V
3.4 V
70
60
50
40
30
20
V
= 3.1 V
GS
T = 25°C
J
2.8 V
10
0
T = 125°C
J
T = −55°C
J
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
10
9
6.5
6.0
5.5
5.0
4.5
T = 25°C
D
T = 25°C
J
J
I
= 16 A
8
V
= 4.5 V
GS
7
6
5
4
V
= 10 V
GS
3
2
4.0
3.5
1
0
3
4
5
6
7
8
9
10
2
7
12
17
22
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
1E+04
1E+03
1E+02
V
I
= 10 V
= 16 A
GS
T = 125°C
J
D
T = 85°C
J
1E+01
1E+00
T = 25°C
J
0.8
0.6
0
25
50
75
100
125
150
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
4
NTTFS5D1N06HL
TYPICAL CHARACTERISTICS
10
9
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
RSS
100
Q
Q
GD
GS
C
10
1
T = 25°C
V
= 0 V
J
GS
2
1
0
I
D
= 16 A
T = 25°C
J
V
DS
= 30 V
f = 1 MHz
0
5
10
15
20
25
0
10
20
30
40
50
60
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
10
V
GS
= 0 V
V
V
= 4.5 V
= 30 V
= 16 A
GS
DS
I
D
t
d(off)
t
f
t
r
t
d(on)
1
10
1
T = 125°C
J
T = 25°C
J
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3
0.4
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.5
0.6
0.7
0.8
0.9 1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
T
= 100°C
J(initial)
10 ms
0.5 ms
1 ms
V
1
GS
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
www.onsemi.com
5
NTTFS5D1N06HL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
DATE 21 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year Code
WW = Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON90827G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明