NTTS2P03R2G [ONSEMI]
功率 MOSFET，30V，2.48A，85mΩ，单 P 沟道，Micro8;
| 型号： | NTTS2P03R2G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，30V，2.48A，85mΩ，单 P 沟道，Micro8 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTTS2P03R2
Power MOSFET
−2.48 Amps, −30 Volts
P−Channel Enhancement Mode
Single Micro8t Package
Features
http://onsemi.com
• Ultra Low R
DS(on)
• Higher Efficiency Extending Battery Life
• Miniature Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
• Pb−Free Package is Available
−2.48 AMPERES
−30 VOLTS
85 mW @ VGS = −10 V
Single P−Channel
Applications
D
• Power Management in Portable and Battery−Powered Products,
i.e.: Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
G
Rating
Symbol
Value
−30
Unit
V
Drain−to−Source Voltage
V
DSS
S
Gate−to−Source Voltage − Continuous
V
"20
V
GS
Thermal Resistance,
Junction−to−Ambient (Note 1)
R
P
I
160
0.78
−2.48
−1.98
°C/W
W
A
Micro8
CASE 846A
STYLE 1
q
JA
8
Total Power Dissipation @ T = 25°C
A
D
Continuous Drain Current @ T = 25°C
Continuous Drain Current @ T = 70°C
A
D
1
I
A
A
D
Thermal Resistance,
Junction−to−Ambient (Note 2)
R
P
I
70
°C/W
W
A
q
JA
MARKING DIAGRAM
& PIN ASSIGNMENT
Total Power Dissipation @ T = 25°C
1.78
−3.75
−3.0
A
D
Continuous Drain Current @ T = 25°C
Continuous Drain Current @ T = 70°C
A
D
I
A
A
D
Source
1
8
7
6
5
Drain
Drain
Drain
Drain
Thermal Resistance,
Junction−to−Ambient (Note 3)
Total Power Dissipation @ T = 25°C
Continuous Drain Current @ T = 25°C
Continuous Drain Current @ T = 70°C
Pulsed Drain Current (Note 5)
2
R
P
I
I
210
0.60
−2.10
−1.67
−17
°C/W
W
A
A
A
Source
Source
Gate
q
JA
3
4
A
D
A
D
A
D
I
(Top View)
DM
Thermal Resistance ,
Junction−to−Ambient (Note 4)
R
P
I
100
1.25
−3.02
−2.42
−24
°C/W
W
A
A
A
WW
AE
= Work Week
= Device Code
= Pb−Free Package
q
JA
Total Power Dissipation @ T = 25°C
A
D
Continuous Drain Current @ T = 25°C
Continuous Drain Current @ T = 70°C
Pulsed Drain Current (Note 5)
G
A
D
I
(Note: Microdot may be in either location)
A
D
I
DM
Operating and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
ORDERING INFORMATION
†
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
Device
Package
Shipping
NTTS2P03R2
Micro8
4000/Tape & Reel
4000/Tape & Reel
NTTS2P03R2G
Micro8
(Pb−Free)
1. Minimum FR−4 or G−10 PCB, Time ≤ 10 Seconds.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Time ≤ 10 Seconds.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3. Minimum FR−4 or G−10 PCB, Steady State.
4. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided),
Steady State.
5. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 2
NTTS2P03R2/D
NTTS2P03R2
MAXIMUM RATINGS (T = 25°C unless otherwise noted) (continued)
J
Rating
Symbol
Value
Unit
Single Pulse Drain−to−Source Avalanche Energy − Starting T = 25°C
E
292.5
mJ
J
AS
(V = −30 Vdc, V = −10 Vdc, Peak I = −3.0 Apk, L = 65 mH, R = 25 W)
DD
GS
L
G
Maximum Lead Temperature for Soldering Purposes for 10 seconds
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 6)
T
260
°C
L
C
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (V = 0 Vdc, I = −250 mAdc)
V
(BR)DSS
−30
−
−
−30
−
−
Vdc
mV/°C
GS
D
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
I
mAdc
DSS
(V = 0 Vdc, V = −30 Vdc, T = 25°C)
−
−
−
−
−1.0
−25
GS
DS
J
(V = 0 Vdc, V = −30 Vdc, T = 125°C)
GS
DS
J
Gate−Body Leakage Current (V = −20 Vdc, V = 0 Vdc)
I
I
−
−
−
−
−100
100
nAdc
nAdc
GS
DS
GSS
GSS
Gate−Body Leakage Current (V = +20 Vdc, V = 0 Vdc)
GS
DS
ON CHARACTERISTICS
Gate Threshold Voltage (V = V , I = −250 mAdc)
V
−1.0
−
−1.7
3.6
−3.0
−
Vdc
DS
GS
D
GS(th)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
R
DS(on)
W
(V = −10 Vdc, I = −2.48 Adc)
−
−
0.063
0.100
0.085
0.135
GS
D
(V = −4.5 Vdc, I = −1.24 Adc)
GS
D
Forward Transconductance (V = −15 Vdc, I = −1.24 Adc)
g
FS
−
3.1
−
Mhos
pF
DS
D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
−
−
−
500
160
65
−
−
−
(V = −24 Vdc, V = 0 Vdc,
DS
GS
Output Capacitance
C
oss
f = 1.0 MHz)
Reverse Transfer Capacitance
C
rss
SWITCHING CHARACTERISTICS (Notes 7 & 8)
Turn−On Delay Time
t
−
−
−
−
−
−
−
−
−
−
−
10
20
40
35
16
40
30
30
15
3.2
4.0
−
−
ns
ns
d(on)
Rise Time
t
r
(V = −24 Vdc, I = −2.48 Adc,
DD
D
V
= −10 Vdc, R = 6.0 W)
G
GS
Turn−Off Delay Time
Fall Time
t
t
t
−
d(off)
t
−
f
Turn−On Delay Time
Rise Time
−
d(on)
t
−
r
(V = −24 Vdc, I = −1.24 Adc,
DD
D
V
= −4.5 Vdc, R = 6.0 W)
G
GS
Turn−Off Delay Time
Fall Time
−
d(off)
t
−
f
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Q
22
−
nC
tot
gs
gd
(V = −24 Vdc,
DS
Q
Q
V
= −4.5 Vdc,
GS
I
= −2.48 Adc)
D
−
BODY−DRAIN DIODE RATINGS (Note 7)
Diode Forward On−Voltage
(I = −2.48 Adc, V = 0 Vdc)
V
−
−
−0.92
−0.72
−1.3
−
Vdc
ns
S
GS
SD
(I = −2.48 Adc, V = 0 Vdc,
S
GS
T = 125°C)
J
Reverse Recovery Time
t
−
−
−
−
38
20
−
−
−
−
rr
(I = −1.45 Adc, V = 0 Vdc,
S
GS
t
a
dI /dt = 100 A/ms)
S
t
18
b
Reverse Recovery Stored Charge
Q
0.04
mC
RR
6. Handling precautions to protect against electrostatic discharge is mandatory.
7. Indicates Pulse Test: Pulse Width = 300 msec max, Duty Cycle = 2%.
8. Switching characteristics are independent of operating junction temperature.
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2
NTTS2P03R2
5
3
2
−10 V
−3.5 V
−3.3 V
T = 25°C
J
V
≥ −10 V
DS
4
3
2
−3.7 V
−3.9 V
−3.1 V
−4.1 V
−4.5 V
−4.9 V
−6 V
−2.9 V
T = 25°C
J
1
0
−2.7 V
−2.5 V
T = 100°C
1
0
J
T = −55°C
J
V
= −2.3 V
GS
1
2
3
4
5
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.15
0.1
T = 25°C
J
I
= −2.48 A
D
0.25
0.2
T = 25°C
J
V
= −4.5 V
= −10 V
GS
0.15
0.1
V
GS
0.05
0
0.05
0
0
2
4
6
8
10
0.5
1.5
2.5
3.5
4.5
5.5
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I DRAIN CURRENT (AMPS)
D,
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1
10,000
1000
100
V
= 0 V
GS
I
V
= −2.48 A
D
= −10 V
GS
T = 150°C
J
T = 100°C
J
10
1
0.8
0.6
−50 −25
0
25
50
75
100
125 150
5
10
15
20
25
30
T
JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
J,
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTTS2P03R2
6
30
25
20
15
10
V
= 0 V
V
= 0 V
GS
DS
1200
1000
800
T = 25°C
C
J
5
4
3
2
iss
QT
V
GS
Q1
Q2
C
rss
600
C
iss
400
I
= −2.48 A
D
C
1
0
5
0
200
0
oss
T = 25°C
J
V
DS
C
rss
0
2
4
6
8
10
12
14
16
−10 −5
0
5
10
15
20
25
30
−V
GS
−V
DS
Q , TOTAL GATE CHARGE (nC)
g
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 7. Capacitance Variation
100
3
2.5
2
V
= 0 V
GS
t
d (off)
T = 25°C
J
t
f
t
r
1.5
1
10
t
d (on)
V
D
V
= −24 V
DD
I
= −2.48 A
0.5
0
= −10 V
GS
1
10
GATE RESISTANCE (OHMS)
100
1
0.4
0.5
0.6
0.7
0.8
0.9
1
R
G,
−V
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD,
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage
versus Current
100
10
1
V
= 30 V
GS
SINGLE PULSE
= 25°C
di/dt
T
C
I
S
1 ms
t
rr
10 ms
t
t
b
a
TIME
0.25 I
t
S
p
0.1
R
LIMIT
I
DS(on)
S
dc
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1
10
100
Figure 12. Diode Reverse Recovery Waveform
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NTTS2P03R2
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
D = 0.5
0.2
0.1
0.05
P
(pk)
R
(t) = r(t) R
q
JC
q
JC
0.02
0.01
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
t
1
1
t
2
T
− T = P
C
R (t)
q
JC
J(pk)
(pk)
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
1.0E−05 1.0E−04
0.1
1.0E−03
1.0E−02
1.0E−01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
t, TIME (s)
Figure 13. Thermal Response
Micro8 is a trademark of International Rectifier.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE K
DATE 16 JUL 2020
SCALE 2:1
GENERIC
MARKING DIAGRAM*
8
XXXX
AYWG
G
1
XXXX = Specific Device Code
A
Y
W
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
STYLE 1:
STYLE 2:
PIN 1. SOURCE 1
STYLE 3:
PIN 1. SOURCE
PIN 1. N-SOURCE
2. N-GATE
(Note: Microdot may be in either location)
2. SOURCE
3. SOURCE
4. GATE
2. GATE 1
3. SOURCE 2
4. GATE 2
3. P-SOURCE
4. P-GATE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
5. DRAIN
6. DRAIN
7. DRAIN
8. DRAIN
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
5. P-DRAIN
6. P-DRAIN
7. N-DRAIN
8. N-DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB14087C
MICRO8
PAGE 1 OF 1
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