NTZS3151PT1G [ONSEMI]
Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563; 小信号MOSFET -20 V， -950毫安， P沟道SOT- 563
| 型号： | NTZS3151PT1G |
| 厂家： | 
ONSEMI |
| 描述： | Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 |
| 文件： | 总5页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTZS3151P
Small Signal MOSFET
−20 V, −950 mA, P−Channel SOT−563
Features
• Low R
Improving System Efficiency
• Low Threshold Voltage
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DS(on)
V
R
Typ
I Max
D
• Small Footprint 1.6 x 1.6 mm
• These are Pb−Free Devices
(BR)DSS
DS(on)
120 mW @ −4.5 V
144 mW @ −2.5 V
−20 V
−950 mA
Applications
195 mW @ −1.8 V
• Load/Power Switches
P−Channel MOSFET
• Battery Management
D
• Cell Phones, Digital Cameras, PDAs, Pagers, etc.
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)
J
G
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
DSS
−20
8.0
V
V
S
Gate−to−Source Voltage
V
GS
Continuous Drain Current
(Note 1)
T = 25°C
−860
−690
170
mA
A
Steady
State
MARKING
DIAGRAM
I
D
T = 70°C
A
6
Power Dissipation
(Note 1)
Steady State
P
mW
mA
D
1
TX M G
SOT−563−6
G
CASE 463A
Continuous Drain Current
(Note 1)
T = 25°C
A
−950
−760
210
t v 5 s
I
D
T = 70°C
A
TX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
Power Dissipation
(Note 1)
t v 5 s
P
mW
D
(Note: Microdot may be in either location)
Pulsed Drain Current
t = 10 ms
I
−4.0
A
p
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
150
°C
J
PINOUT: SOT−563
T
Source Current (Body Diode)
I
−360
mA
S
D
D
1
2
3
6
5
D
D
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
720
600
Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – t v 5 s (Note 1)
°C/W
R
q
JA
4
S
G
R
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in. sq. pad size
Top View
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
© Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2
NTZS3151P/D
NTZS3151P
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
V
= 0 V, I = −250 mA
−20
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
V
/T
−13
mV/°C
(BR)DSS
J
Temperature Coefficient
Zero Gate Voltage Drain Current
= 0 V
T = 25°C
J
−1.0
−5.0
mA
GS
I
DSS
V
DS
= −20 V
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= 0 V, V = "8.0 V
"100
nA
GSS
DS
GS
V
V
= V , I = −250 mA
−0.45
−1.0
V
GS(TH)
GS
DS
D
Negative Threshold
V
/T
2.4
mV/°C
GS(TH)
J
Temperature Coefficient
Drain−to−Source On Resistance
V
V
V
V
= −4.5 V, I = −950 mA
120
112
144
195
3.1
150
142
200
240
mW
GS
GS
GS
GS
D
= −4.5 V, I = −770 mA
D
R
DS(on)
= −2.5 V, I = −670 mA
D
= −1.8 V, I = −200 mA
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= −10 V, I = −810 mA
S
DS
D
C
458
61
pF
ISS
V
= 0 V, f = 1.0 MHz,
DS
GS
Output Capacitance
C
C
OSS
RSS
V
= −16 V
Reverse Transfer Capacitance
Total Gate Charge
38
Q
5.6
0.6
0.9
1.2
nC
ns
G(TOT)
V
V
= −4.5 V, V = −10 V;
DS
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Q
G(TH)
I
D
= −770 mA
Q
GS
GD
Q
t
5.0
12
d(ON)
Rise Time
t
r
= −4.5 V, V = −10 V,
GS
I
DD
= −950 mA, R = 6.0 W
D
G
Turn−Off Delay Time
t
23.7
18
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
T = 25°C
−0.64
−0.5
10.5
−0.9
V
J
V
S
= 0 V,
GS
V
SD
I
= −360 mA
T = 125°C
J
Reverse Recovery Time
t
V
= 0 V, dI /dt = 100 A/ms,
ns
RR
GS
S
I
S
= −360 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTZS3151P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
4
3.5
3
4
V
DS
≥ −10 V
−1.8 V
−1.6 V
3.5
3
V
V
= −3 V
= −2 V
GS
T = 25°C
J
GS
2.5
2.5
2
2
1.5
1
−1.4 V
1.5
1
T = −55°C
J
−1.2 V
−1 V
4.5
0.5
0
0.5
0
25°C
125°C
0
0.5
1
1.5
2
2.5
3
3.5
4
5
0
0.5
1
1.5
2
2.5
3
−V , GATE−TO−SOURCE VOLTAGE (VOLTS)
GS
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.3
T = 25°C
J
V
GS
= −4.5 V
V
GS
= −1.8 V
0.2
V
V
= −2.5 V
T = 125°C
J
GS
= −4.5 V
GS
0.1
0
0.1
0
T = 25°C
J
T = −55°C
J
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
−I DRAIN CURRENT (AMPS)
D,
−I DRAIN CURRENT (AMPS)
D,
Figure 4. On−Resistance vs. Drain Current and
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Temperature
1.8
10000
1000
I
V
= −0.95 A
= −4.5 V
V
GS
= 0 V
D
T = 150°C
J
GS
1.6
1.4
1.2
T = 125°C
J
1
0.8
0.6
100
−50 −25
0
25
50
75
100
125 150
0
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTZS3151P
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)
J
1000
900
800
700
600
500
400
300
30
25
20
15
5
V
= 0 V
V
= 0 V
DS
GS
T = 25°C
J
QT
C
RSS
4
−V
GS
3
2
C
ISS
Q
Q
GD
GS
10
5
1
0
200
100
0
C
OSS
I
= −0.77 A
T = 25°C
−V
DS
D
J
0
10
5
0
5
10
15
20
25
0
1
2
3
4
5
6
−V
GS
−V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
1.2
V
I
= −25 V
= −0.95 A
= −4.5 V
V
GS
= 0 V
DD
T = 25°C
J
D
1.0
0.8
0.6
0.4
V
GS
100
t
d(off)
t
r
f
t
10
1
t
d(on)
0.2
0
1
10
R , GATE RESISTANCE (W)
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 0.9
−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
ORDERING INFORMATION
Device
Package
Shipping
NTZS3151PT1G
SOT−563
(Pb−Free)
4000 / Tape & Reel
NTZS3151PT5G
SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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4
NTZS3151P
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
D
−X−
A
L
6
5
2
4
3
MILLIMETERS
DIM MIN NOM MAX
INCHES
NOM MAX
E
−Y−
MIN
H
E
A
b
C
D
E
e
0.50
0.17
0.08
1.50
1.10
0.55
0.22
0.12
1.60
1.20
0.5 BSC
0.20
0.60 0.020 0.021 0.023
0.27 0.007 0.009 0.011
0.18 0.003 0.005 0.007
1.70 0.059 0.062 0.066
1.30 0.043 0.047 0.051
0.02 BSC
1
b 56 PL
C
e
M
0.08 (0.003)
X Y
L
0.10
1.50
0.30 0.004 0.008 0.012
H
1.60
1.70 0.059 0.062 0.066
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer
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NTZS3151P/D
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