NUP2105LT1 [ONSEMI]
Dual Line CAN Bus Protector; 双线CAN总线保护器
| 型号： | NUP2105LT1 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Line CAN Bus Protector |
| 文件： | 总8页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NUP2105L
Dual Line CAN
Bus Protector
The NUP2105L has been designed to protect the CAN transceiver in
high−speed and fault tolerant networks from ESD and other harmful
transient voltage events. This device provides bidirectional protection
for each data line with a single compact SOT−23 package, giving the
system designer a low cost option for improving system reliability and
meeting stringent EMI requirements.
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SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
Features
• 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
• Low Reverse Leakage Current (< 100 nA)
• Low Capacitance High−Speed CAN Data Rates
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns
PIN 1
PIN 3
PIN 2
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)
• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 9.5 A
(1 x 50 ms)
CAN_H
CAN
Transceiver
CAN Bus
CAN_L
• ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
• Flammability Rating UL 94 V−0
NUP2105L
• Pb−Free Packages are Available
Applications
• Industrial Control Networks
MARKING
DIAGRAM
♦ Smart Distribution Systems (SDS
♦ DeviceNet
)
• Automotive Networks
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
27DM
SOT−23
CASE 318
STYLE 27
1
27D
M
= Device Code
= Date Code
ORDERING INFORMATION
†
Device
Package
Shipping
NUP2105LT1
SOT−23
3000/Tape & Reel
3000/Tape & Reel
NUP2105LT1G
SOT−23
(Pb−Free)
NUP2105LT3
SOT−23
10000/Tape & Reel
10000/Tape & Reel
NUP2105LT3G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
September, 2004 − Rev. 1
NUP2105L/D
NUP2105L
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
Symbol
Rating
Value
Unit
PPK
Peak Power Dissipation
W
8 x 20 ms Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
350
T
J
T
J
T
L
−40 to 125
−55 to 150
260
°C
°C
°C
Lead Solder Temperature (10 s)
ESD
Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Symbol
Parameter
Reverse Working Voltage
Breakdown Voltage
Test Conditions
Min
24
Typ
Max
Unit
V
V
RWM
(Note 2)
I = 1 mA (Note 3)
V
BR
26.2
32
100
40
V
T
I
R
Reverse Leakage Current
Clamping Voltage
V
RWM
= 24 V
15
nA
V
V
C
I
PP
= 5 A (8 x 20 ms Waveform)
(Note 4)
V
C
Clamping Voltage
I
= 8 A (8 x 20 ms Waveform)
44
V
PP
(Note 4)
I
Maximum Peak Pulse Current
Capacitance
8 x 20 ms Waveform (Note 4)
8.0
30
A
PP
CJ
V
R
= 0 V, f = 1 MHz (Line to GND)
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal or greater than the DC
RWM
3. V is measured at pulse test current I .
BR
T
4. Pulse waveform per Figure 1.
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2
NUP2105L
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise noted)
J
12.0
110
100
90
WAVEFORM
PARAMETERS
t = 8 ms
PULSE WAVEFORM
8 x 20 ms per Figure 1
10.0
8.0
6.0
4.0
r
80
t = 20 ms
d
c−t
70
60
50
t = I /2
d
PP
40
30
20
10
0
2.0
0.0
0
5
10
15
t, TIME (ms)
20
25
30
25
30
35
40
45
50
V , CLAMPING VOLTAGE (V)
C
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
50
35
30
25
20
f = 1.0 MHz, Line to Ground
45
40
35
30
25
20
15
10
5
125°C
25°C
25°C
65°C
−40°C
15
10
−55°C
T = +150°C
A
0
0
2
4
6
8
10
20
22
24
26
28
30
32
34
V , REVERSE VOLTAGE (V)
R
V
BR
, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics of the
NUP2105L
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
120
100
80
60
40
20
0
25
20
15
10
5
−55°C
+25°C
T = +150°C
A
+65°C
0
0
2
4
6
8
10
12
−60
−30
0
30
60
90
120
150 180
I , LEAKAGE CURRENT (nA)
L
TEMPERATURE (°C)
Figure 5. IR versus Temperature Characteristics of
the NUP2105L
Figure 6. Temperature Power Dissipation Derating of
the NUP2501L
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3
NUP2105L
APPLICATIONS
Background
ESD. The NUP2105L has been tested to EMI and ESD
levels that exceed the specifications of popular high speed
CAN networks.
The Controller Area Network (CAN) is a serial
communication protocol designed for providing reliable
high speed data transmission in harsh environments. TVS
diodes provide a low cost solution to conducted and radiated
Electromagnetic Interference (EMI) and Electrostatic
Discharge (ESD) noise problems. The noise immunity level
and reliability of CAN transceivers can be easily increased
by adding external TVS diodes to prevent transient voltage
failures.
CAN Physical Layer Requirements
Table 1 provides a summary of the system requirements
for a CAN transceiver. The ISO 11898−2 physical layer
specification forms the baseline for most CAN systems. The
transceiver requirements for the Honeywell
Distribution Systems (SDS ) and
Smart
Rockwell
(Allen−Bradley) DeviceNet high speed CAN networks
are similar to ISO 11898−2. The SDS and DeviceNet
transceiver requirements are similar to ISO 11898−2;
however, they include minor modifications required in an
industrial environment.
The NUP2105L provides a transient voltage suppression
solution for CAN data communication lines. The
NUP2105L is a dual bidirectional TVS device in a compact
SOT−23 package. This device is based on Zener technology
that optimizes the active area of a PN junction to provide
robust protection against transient EMI surge voltage and
Table 1. Transceiver Requirements for High−Speed CAN Networks
Parameter
ISO 11898−2
−3.0 V / 16 V
CAN_L:
SDS Physical Layer
Specification 2.0
DeviceNet
Min / Max Bus Voltage
(12 V System)
11 V / 25 V
Same as ISO 11898−2
Common Mode Bus Voltage
−2.0 V (min)
Same as ISO 11898−2
Same as ISO 11898−2
2.5 V (nom)
CAN_H:
2.5 V (nom)
7.0 V (max)
Transmission Speed
ESD
1.0 Mb/s @ 40 m
125 kb/s @ 500 m
Same as ISO 11898−2
500 kb/s @ 100 m
125 kb/s @ 500 m
Not specified, recommended
w $8.0 kV (contact)
Not specified, recommended
w $8.0 kV (contact)
Not specified, recommended
w $8.0 kV (contact)
EMI Immunity
ISO 7637−3, pulses ‘a’ and ‘b’
IEC 61000−4−4 EFT
Same as ISO 11898−2
Popular Applications
Automotive, Truck, Medical
and Marine Systems
Industrial Control Systems
Industrial Control Systems
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4
NUP2105L
EMI Specifications
61000−4 and ISO 7637 tests are similar; however, the IEC
standard was created as a generic test for any electronic
system, while the ISO 7637 standard was designed for
vehicular applications. The IEC61000−4−4 Electrical Fast
Transient (EFT) specification is similar to the ISO 7637−1
pulse 1 and 2 tests and is a requirement of SDS CAN
systems. The IEC 61000−4−5 test is used to define the power
absorption capacity of a TVS device and long duration
voltage transients such as lightning. Table 2 provides a
summary of the ISO 7637 and IEC 61000−4−X test
specifications. Table 3 provides the NUP2105L’s ESD
test results.
The EMI protection level provided by the TVS device can
be measured using the International Organization for
Standardization (ISO) 7637−1 and −3 specifications that are
representative of various noise sources. The ISO 7637−1
specification is used to define the susceptibility to coupled
transient noise on a 12 V power supply, while ISO 7637−3
defines the noise immunity tests for data lines. The ISO 7637
tests also verify the robustness and reliability of a design by
applying the surge voltage for extended durations.
The IEC 61000−4−X specifications can also be used to
quantify the EMI immunity level of a CAN system. The IEC
Table 2. ISO 7637 and IEC 61000−4−X Test Specifications
Test
Waveform
Test Specifications
NUP25050L Test
= 1.75 A
Simulated Noise Source
V = 0 to −100 V
I
DUT in parallel with inductive
load that is disconnected from
power supply.
s
max
I
= 10 A
V
_
= 31 V
max
clamp max
Pulse 1
Figure 8
t
= 5000 pulses
duration
t
= 5000 pulses
duration
R = 10 W, t = 1.0 ms,
i
r
t = 2000 ms, t = 2.5 s,
d
1
ISO 7637−1
t = 200 ms, t = 100 ms
2
3
V = 0 to +100 V
I
= 9.5 A
DUT in series with inductor
that is disconnected.
12 V Power Supply Lines
s
max
_
I
= 10 A
V
= 33 V
max
clamp max
Pulse 2
Figure 9
t
= 5000 pulses
duration
t
= 5000 pulses
duration
Ri = 10 W, t = 1.0 ms,
r
t = 50 ms, t = 2.5 s,
d
1
t = 200 ms
2
V = −60 V
I
= 50 A
Switching noise of inductive
loads.
s
max
_
Pulse ‘a’
I
= 1.2 A
V
= 40 V
max
clamp max
t
= 60 minutes
duration
Figure 12
ISO 7637−3
t
= 10 minutes
duration
R = 50 W, t = 5.0 ns,
i
r
V = +40 V
Data Line EFT
s
t = 0.1 ms, t = 100 ms,
d
1
Pulse ‘b’
I
= 0.8 A
max
t = 10 ms, t = 90 ms
2
3
Figure 13
t
= 10 minutes
duration
V
I
= 2.0 kV
= 40 A
(Note 2)
Switching noise of inductive
loads.
open circuit
short circuit
(Level 4 = Severe Industrial
Environment)
IEC 61000−4−4
Data Line EFT
Figure 14
Figure 10
R = 50 W, t < 1.0 ms,
i
r
t = 50 ns, t
= 15 ms,
d
burst
f
= 2.0 to 5.0 kHz,
burst
t
= 300 ms
repeat
t
= 1 minute
duration
V
= 1.2 x 50 ms,
See Figure 11
Lightning, nonrepetitive power
line and load switching
open circuit
I
= 8 x 20 ms
short circuit
IEC 61000−4−5
R = 50 W
i
1. DUT = device under test.
2. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of
ISO 7637−3.
Table 3. NUP2505L ESD Test Results
ESD Specification
Human Body Model
Test
Test Level
Pass / Fail
Contact
Contact
16 kV
Pass
Pass
Pass
30 kV (Note 3)
30 kV (Note 3)
IEC 61000−4−2
Non−contact (Air Discharge)
3. Test equipment maximum test voltage is 30 kV.
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5
NUP2105L
TVS Diode Protection Circuit
voltage of the diode that is reversed biased, plus the diode
drop of the second diode that is forwarded biased.
TVS diodes provide protection to a transceiver by
clamping a surge voltage to a safe level. TVS diodes have
high impedance below and low impedance above their
breakdown voltage. A TVS Zener diode has its junction
optimized to absorb the high peak energy of a transient
event, while a standard Zener diode is designed and
specified to clamp a steady state voltage.
CAN_H
CAN
Transceiver
CAN Bus
CAN_L
NUP2105L
Figure 7 provides an example of a dual bidirectional
TVS diode array that can be used for protection with the
high−speed CAN network. The bidirectional array is created
from four identical Zener TVS diodes. The clamping
voltage of the composite device is equal to the breakdown
Figure 7. High−Speed and Fault Tolerant CAN TVS
Protection Circuit
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6
NUP2105L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
L
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
S
C
B
1
2
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
G
H
J
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
V
G
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
H
J
D
K
K
L
S
V
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
NUP2105L
Honeywell and SDS are registered trademarks of Honeywell International Inc.
DeviceNet is a trademark of Rockwell Automation.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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For additional information, please contact your
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NUP2105L/D
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