NUP2125_16 [ONSEMI]
Dual Line CAN Bus Protector;
| 型号： | NUP2125_16 |
| 厂家： | 
ONSEMI |
| 描述： | Dual Line CAN Bus Protector |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NUP2125, SZNUP2125
Dual Line CAN
Bus Protector
The SZ/NUP2125 has been designed to protect the CAN transceiver
from ESD and other harmful transient voltage events. This device
provides bidirectional protection for each data line with a single
compact SC−70 (SOT−323) package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
www.onsemi.com
MARKING
DIAGRAM
Features
SC−70
CASE 419
STYLE 4
25MG
• 200 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
• Diode Capacitance Matching
• Low Reverse Leakage Current (< 100 nA)
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1 x 50 ms)
G
1
25
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN 1
• ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5 x 50 ns)
PIN 3
PIN 2
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
CAN_H
CAN_L
CAN
Transceiver
CAN Bus
• These are Pb−Free Devices
Applications
NUP2125
• Automotive Networks
♦ CAN / CAN−FD
♦ Low and High−Speed CAN
♦ Fault Tolerant CAN
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2016 − Rev. 1
NUP2125/D
NUP2125, SZNUP2125
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)
J
Symbol
Rating
Value
200
Unit
W
PPK
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
T
J
−55 to 150
−55 to 150
260
°C
T
J
°C
T
L
Lead Solder Temperature (10 s)
°C
ESD
Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF / 2 kW Contact
ISO 10605 330 pF / 2 kW Contact
8.0
1.6
30
30
30
30
kV
kV
kV
kV
kV
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T = 25°C, unless otherwise specified)
J
Symbol
Parameter
Reverse Working Voltage
Breakdown Voltage
Test Conditions
Min
24
26.2
−
Typ
−
Max
−
Unit
V
V
RWM
(Note 2)
I = 1 mA (Note 3)
V
BR
28.5
15
32
V
T
I
R
Reverse Leakage Current
Clamping Voltage
V
RWM
= 24 V
100
36.6
nA
V
V
C
I
PP
= 1 A (8/20 ms Waveform)
−
33.4
(Note 4)
V
C
Clamping Voltage
I
PP
= 3 A (8/20 ms Waveform)
−
44
50
V
(Note 4)
I
Maximum Peak Pulse Current
Capacitance
8/20 ms Waveform (Note 4)
−
−
−
−
−
3.0
10
2
A
pF
%
PP
C
V
R
V
R
= 0 V, f = 1 MHz (Line to GND)
= 0 V, 5 MHz (Note 5)
J
DC
Diode Capacitance Matching
0.26
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal or greater than the DC
RWM
3. V is measured at pulse test current I .
BR
T
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
J
table.
ORDERING INFORMATION
†
Device
Package
Shipping
NUP2125WTT1G
3000 / Tape & Reel
SZNUP2125WTT1G*
NUP2125WTT3G
SC−70
(Pb−Free)
10000 / Tape & Reel
SZNUP2125WTT3G*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
2
NUP2125, SZNUP2125
TYPICAL PERFORMANCE CURVES
(T = 25°C unless otherwise noted)
J
3.5
110
100
90
WAVEFORM
PARAMETERS
3.0
2.5
2.0
1.5
1.0
t = 8 ms
r
80
t = 20 ms
d
c−t
70
60
50
t = I /2
d
PP
40
30
20
10
0
0.5
0.0
0
5
10
15
t, TIME (ms)
20
25
30
30
35
40
45
50
V , CLAMPING VOLTAGE (V)
C
Figure 1. Pulse Waveform, 8 × 20 ms
Figure 2. Clamping Voltage vs Peak Pulse Current
50
9
8
7
45
40
35
30
25
20
15
10
5
125°C
25°C
6
5
4
3
2
25°C
65°C
125°C
T = −55°C
A
0
20
22
24
26
28
30
32
34
0
5
10
15
20
25
V , REVERSE VOLTAGE (V)
R
V
BR
, VOLTAGE (V)
Figure 4. VBR versus IT Characteristics
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
120
100
80
60
40
20
0
25
20
15
10
5
−55°C
+25°C
T = +150°C
A
0
−60
−30
0
30
60
90
120
150 180
0
1
2
3
4
5
I , LEAKAGE CURRENT (nA)
L
TEMPERATURE (°C)
Figure 5. IR versus Temperature Characteristics
Figure 6. Temperature Power Dissipation Derating
www.onsemi.com
3
NUP2125, SZNUP2125
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
e1
L
H
E
0.38
2.10
0.015
0.083
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
STYLE 4:
c
PIN 1. CATHODE
2. CATHODE
3. ANODE
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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Phone: 81−3−5817−1050
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◊
NUP2125/D
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