NVB055N60S5F [ONSEMI]
Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 45 A, 55 mΩ, D2PAK;
| 型号： | NVB055N60S5F |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 45 A, 55 mΩ, D2PAK |
| 文件： | 总9页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel SuperFET) V,
FRFET), D2PAK
600 V, 55 mW, 45 A
V
R
MAX
I MAX
D
DSS
DS(ON)
600 V
55 mW @ 10 V
45 A
D
NVB055N60S5F
G
Description
The SUPERFET V MOSFET FRFET series has optimized body
diode performance characteristics. This can allow for the removal of
components in the application and improve application performance
and reliability, particularly when soft switching topologies are used.
S
POWER MOSFET
Features
• 650 V @ T = 150°C / Typ. R
= 44 mW
J
DS(on)
4
• 100% Avalanche Tested
1
2
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
3
Applications
2
D PAK
CASE 418AJ
• Electric Vehicle On Board Chargers
• EV Main Battery DC/DC Converters
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
600
30
Unit
V
V
DSS
&Z&3&K
V055N
60S5F
Gate−to−Source Voltage
DC
V
GS
V
AC (f > 1 Hz)
30
Continuous Drain Current
T
= 25°C
= 100°C
= 25°C
I
45
A
C
D
T
C
28
1
Power Dissipation
T
C
P
278
159
159
W
A
D
&Z
&3
&K
= Assembly Plant Code
= Date Code (Year & Week)
= Assembly Lot
Pulsed Drain Current
I
DM
T
= 25°C,
= 10 ms
C
P
Pulsed Source Current
(Body Diode)
I
SM
t
V055N60S5F = Specific Device Code
Operating Junction and Storage Temperature
Range
T , T
−55 to
+150
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Source Current (Body Diode)
I
45
A
S
Single Pulse Avalanche
Energy
(I = 7 A,
G
E
AS
417
mJ
L
R
= 25 W)
Avalanche Current
I
AS
7
A
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
E
2.78
120
70
mJ
AR
dvdt
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I ≤ 22.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
May, 2022 − Rev. 1
NVB055N60S5F/D
NVB055N60S5F
THERMAL RESISTANCE
Parameter
Symbol
Value
0.45
Unit
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
R
°C/W
q
JC
R
62.5
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA, T = 25_C
600
−
−
−
V
(BR)DSS
GS
D
J
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV
/
= 10 mA, Referenced to 25_C
−
581
mV/_C
(BR)DSS
D
DT
J
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= 0 V, V = 600 V, T = 25_C
−
−
−
−
10
mA
DSS
GSS
DS
J
I
V
=
30 V, V = 0 V
100
nA
GS
DS
Drain−to−Source On Resistance
Gate Threshold Voltage
R
V
V
= 10 V, I = 22.5 A, T = 25_C
−
3.2
−
44
−
55
4.8
−
mW
V
DS(on)
GS
D
J
V
= V , I = 5.2 mA, T = 25_C
GS(th)
GS
DS
D
J
Forward Trans−conductance
g
FS
V
DS
= 20 V, I = 22.5 A
44.8
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 400 V, V = 0 V, f = 250 kHz
−
−
−
4603
72.9
1114
−
−
−
pF
ISS
DS
GS
Output Capacitance
C
OSS
Time Related Output Capacitance
C
I = Constant, V = 0 V to 400 V,
D DS
OSS(tr.)
V
GS
= 0 V
Energy Related Output Capacitance
Total Gate Charge
C
V
= 0 V to 400 V, V = 0 V
−
−
−
−
−
125
85.2
26.2
24.9
4.32
−
−
−
−
−
OSS(er.)
DS
GS
Q
V
= 400 V, I = 22.5 A, V = 10 V
nC
G(tot)
DD
D
GS
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
GS
Q
GD
R
f = 1 MHz
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
V
= 0/10 V, V = 400 V,
−
−
−
−
44
26.2
108
2.6
−
−
−
−
ns
d(on)
GS
D
DD
I
= 22.5 A, R = 4.7 W
G
t
r
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
V
GS
= 0 V, I = 22.5 A, T = 25_C
−
−
−
−
1.2
−
V
SD
RR
SD
J
t
V
= 0 V, I = 22.5 A,
128
758
ns
nC
GS
SD
dI/dt = 100 A/ms, V = 400 V
DD
Q
−
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
2
†
NVB055N60S5F
V055N60S5F
D PAK
Tape & Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVB055N60S5F
TYPICAL CHARACTERISTICS
100
80
60
40
20
0
1000
T
VDS=20V
J=25°C
100
10
VGS=4.5V
VGS=5V
V
GS=5.5V
VGS=6V
VGS=7V
T
J=−55°C
T
J=25°C
VGS=10V
T
J=150°C
1
0
5
10
15
20
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.12
0.10
0.08
0.06
0.04
0.02
0
1000
100
10
T
VGS=0V
J=25°C
1
T
J=150°C
T
J=25°C
VGS=10V
VGS=20V
T
J=−55°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
0
10
20
30
40
50
60
70
80
90
I , DRAIN CURRENT (A)
D
V
SD
, DIODE FORWARD VOLTAGE (V)
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
5
10
10
ID=22.5A
VGS=0V
T
J=25°C
4
3
2
1
0
f=250KHz
10
10
10
10
10
8
6
4
2
0
C
VDD=120V
VDD=360V
VDD=400V
ISS
OSS
RSS
C
C
−1
10
0
100
200
300
400
500
600
0
10
20
30
40
50
60
70
80
90
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
NVB055N60S5F
TYPICAL CHARACTERISTICS
1.2
1.15
1.1
3
VGS=0V
ID=10mA
ID=22.5A
VGS=10V
2.5
2
1.5
1
1.05
1
0.95
0.9
0.5
0.85
0.8
0
−75 −50 −25
0
25
50
75 100 125 150 175
−75 −50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation vs.
Temperature
Figure 8. On−Resistance Variation vs.
Temperature
45
40
35
30
25
20
15
10
5
1000
100
10
10 ms
100 ms
1 ms
Operation in this Area
is Limited by R
10 ms
DS(on)
1
T
C
= 25°C
DC
T = 150°C
J
Single Pulse
0.1
0
1
10
100
1000
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , CASE TEMPERATURE (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
18
16
14
12
10
VGS=0V
T
J=25°C
f=250KHz
8
6
4
2
EOSS
500
0
0
100
200
300
400
600
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
NVB055N60S5F
TYPICAL CHARACTERISTICS
1
D = 0.5
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
Single Pulse
P
DM
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.45°C/W
J
q
JC
t
1
Peak T = PDM x Z (t) + T
Duty Cycle, D = t / t
q
JC
C
t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
NVB055N60S5F
V
GS
R
Q
g
L
V
DD
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
NVB055N60S5F
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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