NVBG070N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L;
| 型号： | NVBG070N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, D2PAK-7L |
| 文件： | 总8页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – EliteSiC,
65ꢀmohm, 1200ꢀV, M3S,
D2PAK-7L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
87 mW @ 18 V
36 A
Drain (TAB)
NVBG070N120M3S
Features
Gate (Pin 1)
• Typ. R
= 65 mW @ V = 18 V
GS
DS(on)
• Ultra Low Gate Charge (Q
= 57 nC)
G(tot)
• High Speed Switching with Low Capacitance (C = 57 pF)
oss
Driver Source (Pin 2)
Power Source (Pins 3, 4, 5, 6, 7)
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
N−CHANNEL MOSFET
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
D2PAK−7L
CASE 418BJ
V
DSS
Gate−to−Source Voltage
V
GS
−10/+22
−3/+18
V
Recommended Operation Values
of Gate−to−Source Voltage
T
< 175°C
= 25°C
V
GSop
V
C
MARKING DIAGRAM
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
I
D
36
172
25
A
W
A
C
BG070N
120M3S
AYWWZZ
Power Dissipation
(Note 2)
P
D
Continuous Drain
Current (Notes 2, 3)
Steady
State
T
C
= 100°C
I
D
BG070N120M3S = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation
(Note 2)
P
86
W
A
D
WW = Work Week
ZZ
Pulsed Drain Current
(Note 4)
T
C
= 25°C
I
93
DM
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
A
J
stg
+175
ORDERING INFORMATION
Source Current (Body Diode)
I
S
33
91
†
Device
Package
Shipping
T
C
= 25°C, V = −3 V (Note 2)
GS
NVBG070N120M3S
D2PAK−7L
800 / Tape
& Reel
Single Pulse Drain−to−Source Avalanche
Energy (I = 13.5 A, L = 1 mH) (Note 5)
E
AS
mJ
°C
L(pk)
Maximum Temperature for Soldering (10 s)
T
L
270
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1. Surface mounted on a FR−4 board using1 in pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. The maximum current rating is based on typical RDS(on) performance.
4. Repetitive rating, limited by max junction temperature.
5. E of 91 mJ is based on starting T = 25°C; L = 1 mH, I = 13.5 A,
AS
DD
J
AS
V
= 100 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. 0
NVBG070N120M3S/D
NVBG070N120M3S
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.87
40
Unit
Junction−to−Case − Steady State (Note 2)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Notes 1, 2)
R
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I
D
= 1 mA, referenced to 25°C
−
0.3
V/°C
(BR)DSS
J
(Note 7)
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS
Gate Threshold Voltage
I
V
= 0 V, V = 1200 V
−
−
−
−
100
1
mA
mA
DSS
GS
DS
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 7 mA
2.04
−3
−
2.9
−
4.4
+18
87
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
= 18 V, I = 15 A, T = 25°C
65
mW
DS(on)
GS
D
J
V
GS
= 18 V, I = 15 A, T = 175°C
−
136
−
D
J
(Note 7)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 15 A (Note 7)
−
12
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1230
57
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
C
OSS
C
RSS
Reverse Transfer Capacitance
Total Gate Charge
5
Q
V
= −3/18 V, V = 800 V,
57
nC
G(TOT)
GS
DS
I
= 15 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
3.2
9.6
17
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
4.2
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
= −3/18 V,
−
−
−
−
−
−
−
11
12
−
−
−
−
−
−
−
ns
d(ON)
GS
V
= 800 V,
= 15 A,
= 4.7 W
DS
Rise Time
t
r
I
D
R
G
Turn−Off Delay Time
t
30
d(OFF)
inductive load (Notes 6, 7)
Fall Time
t
f
8.8
119
36
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
mJ
E
OFF
E
tot
155
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C
−
−
−
−
−
33
93
−
A
V
SD
GS
C
Current (Note 2)
(Note 7)
Pulsed Source−Drain Diode Forward
Current (Note 4)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 15 A, T = 25°C
4.7
SD
SD
J
www.onsemi.com
2
NVBG070N120M3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
S
= −3/18 V, I = 15 A,
−
−
−
−
−
−
15
63
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Q
RR
(Note 7)
E
5.7
8.6
8.3
6.3
REC
RRM
I
t
A
t
B
ns
ns
Discharge time
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. E /E
result is with body diode
ON OFF
7. Defined by design, not subject to production test.
www.onsemi.com
3
NVBG070N120M3S
TYPICAL CHARACTERISTICS
80
60
40
2.0
12 V
V
GS
= 20 V to 15 V
1.5
12 V
V
= 15 V to 20 V
GS
1.0
0.5
20
0
0
2
4
6
8
10
0
4
5
20
40
I , DRAIN CURRENT (A)
60
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
1.5
1.0
500
400
300
200
I
V
= 15 A
I
D
= 15 A
D
= 18 V
GS
T = 150°C
J
0.5
0
100
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
50
40
30
20
160
140
120
100
80
Etot
R
V
V
= 4.7 W
= 800 V
= 18/−3 V
G
V
DS
= 10 V
DD
GS
Eon
Eoff
T
C
= 25°C
60
T = 175°C
J
T = 25°C
J
40
10
0
20
0
T = −55°C
J
0
5
10
15
20
7
9
11
13
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , COLLECTOR CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Collector Current
www.onsemi.com
4
NVBG070N120M3S
TYPICAL CHARACTERISTICS
160
140
120
100
80
150
Etot
V
I
= 800 V
= 7.5 A
= 18/−3 V
DD
R
= 4.7 W
= 15 A
= 18/−3 V
G
Etot
Eon
D
I
D
V
GS
V
GS
Eon
Eoff
100
60
50
0
40
Eoff
20
0
600
650
700
750
800
0
2
4
6
8
10
60
10
V
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
DD
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
200
100
18
V
DD
= 400 V
V
= −3 V
I
= 15 A
GS
D
15
12
V
= 800 V
DD
9
6
3
V
DD
= 600 V
T = 175°C
J
10
1
T = 25°C
J
0
T = −55°C
J
−3
0
2
4
6
8
10
0
10
20
30
40
50
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 9. Reverse Drain Current vs. Body
Diode Forward Voltage
Figure 10. Gate−to−Source Voltage vs. Total
Charge
10K
1K
100
C
ISS
25°C
150°C
C
OSS
RSS
10
100
10
1
C
f = 1 MHz
= 0 V
V
GS
1
0.1
1
10
100
800
0.0001
0.001
0.01
T , AVALANCHE TIME (ms)
AV
0.1
1
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 11. Capacitance vs. Drain−to−Source
Figure 12. Unclamped Inductive Switching
Capability
Voltage
www.onsemi.com
5
NVBG070N120M3S
TYPICAL CHARACTERISTICS
40
30
20
1000
R
= 0.87°C/W
q
JC
T = Max Rated
J
Single Pulse
100
10
1
V
GS
= 18 V
T
C
= 25°C
10 ms
100 ms
10 ms
1 ms
R
= 0.87°C/W
10
0
q
JC
R
Limit
0.1
DS(on)
Thermal Limit
Package Limit
100 ms/DC
0.01
25
50
75
100
125
150
175
0.1
1
10
100
1000
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Continuous Drain
Current vs. Case Temperature
Figure 14. Safe Operating Area
20K
10K
R
= 0.87°C/W
q
JC
Single Pulse
T
C
= 25°C
1K
100
10
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE WIDTH (sec)
Figure 15. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
1%
Single Pulse
P
DM
Notes:
= 0.87°C/W
0.01
R
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
t
1
J
DM
1
2
t
2
0.001
0.00001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 16. Junction−to−Case Transient Thermal Response
www.onsemi.com
6
NVBG070N120M3S
PACKAGE DIMENSIONS
D2PAK7 (TO−263−7L HV)
CASE 418BJ
ISSUE B
www.onsemi.com
7
NVBG070N120M3S
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
onsemi Website: www.onsemi.com
◊
www.onsemi.com
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明