NVC040N120SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, Bare Die;
| 型号： | NVC040N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, Bare Die |
| 文件： | 总8页 (文件大小：175K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 40 mohm,
1200ꢀV, M1, Bare Die
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
56 mꢀ @ 20 V
60 A
N−CHANNEL MOSFET
NVC040N120SC1
Description
D
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
G
S
DIE DIAGRAM
G
Features
• 1200 V @ T = 175°C
J
• Typ R
= 40 mꢀ at V = 20 V, I = 40 A
GS D
DS(on)
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Applications
S1
S3
• Automotive Traction Inverter
• Automotive DC−DC Converter for EV/HEV
S2
Die Information
S Wafer Diameter
6 inch
S Die Size
4,270 x 3,560 ꢁ m
S Metallization
⋅ Top
Ti/TiN/Al
5 ꢁ m
⋅ Back
Ti/NiV/Ag
S Die Thickness
S Gate Pad Size
Typ. 200 ꢁ m
604 x 415 ꢁ m
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022 − Rev. 1
NVC040N120SC1/D
NVC040N120SC1
Die Cross Section
Die Layout
4270
604
Source
2
Source
1
Source
3
Passivation
(Polyimide)
G
N- Epic
2107 2437
3560
S1
S3
S2
N+
Substrate
1119
1111.5
1119
Passivation Information
− Passivation Material: Polymide (PSPI)
− Passivation Type: Local Passivation
− Passivation Thickness 10 ꢁ m
: Passivation Area
Die Layout
Figure 1. Bare Die Dimensions
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2
NVC040N120SC1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
1200
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
V
DSS
V
−15/+25
−5/+20
V
GS
Recommended Operation Values of Gate−
to−Source Voltage
T
C
< 175°C
V
GSop
V
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
60
A
ꢂ
JC
Power Dissipation R
P
348
42
W
A
ꢂ
D
JC
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
D
ꢂ
JC
Power Dissipation R
P
174
240
W
A
ꢂ
D
JC
Pulsed Drain Current (Note 2)
T
C
= 25°C
I
DM
Single Pulse Surge Drain Current Capability
T
C
= 25°C, t = 10 ꢁ s, R = 4.7
ꢀ
I
416
A
p
G
DSC
Operating Junction and Storage Temperature Range
Source Current (Body Diode)
T , T
−55 to +175
34
°C
A
J
stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
613
mJ
Energy (I
= 35 A, L = 1 mH) (Note 3)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
R
0.43
°C/W
ꢂ
JC
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 613 mJ is based on starting T = 25°C; L = 1 mH, I = 35 A, V = 120 V, V = 20 V.
AS
J
AS
DD
GS
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3
NVC040N120SC1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
450
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢁ
A
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
ꢁ
A
GSS
Gate Threshold Voltage
V
R
V
= V , I = 10 mA
1.8
−5
−
2.97
−
4.3
+20
56
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 35 A, T = 25_C
39
60
20
mꢀ
DS(on)
D
J
= 20 V, I = 35 A, T = 150_C
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 35 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1781
140
12
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
C
OSS
RSS
C
Q
V
= −5/20 V, V = 600 V, I = 47 A
106
16
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
G(th)
Q
34
GS
GD
Q
26
R
f = 1 MHz
2.2
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
18
41
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 47 A, R = 4.7 ꢀ,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
33
d(off)
t
f
10.4
1003
247
1248
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
ꢁ
J
ON
OFF
TOT
E
E
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V
= −5 V
−
−
−
−
34
A
A
SD
GS
Forward Current
Pulsed Drain−to−Source Diode For-
ward Current (Note 2)
I
240
SDM
GS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
V
V
= −5 V, I = 17.5 A
−
−
−
−
−
−
−
3.8
24
−
−
−
−
−
−
−
V
ns
nC
ꢁ J
A
SD
GS
SD
t
= −5/20 V, I = 47 A, dI /
SD S
dt = 1000 A/ꢁ s
RR
GS
Q
125
8.5
RR
E
REC
RRM
I
10.4
12.4
11.6
t
t
ns
ns
a
Discharge Time
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NVC040N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
100
90
80
70
60
50
40
30
20
4.0
V
GS
= 20 V
V
= 10 V
V
= 12 V
GS
GS
3.5
3.0
2.5
2.0
1.5
15 V
19 V
18 V
15 V
16 V
17 V
17 V
16 V
18 V
19 V
12 V
10 V
V
= 20 V
1.0
0.5
GS
10
0
0
2
4
6
8
10
0
10
20
30 40 50 60
70
80 90 100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 2. On−Region Characteristics
Figure 3. Normalized On−Resistance vs. Drain
Current and Gate Voltage
300
200
1.9
1.7
1.5
1.3
1.1
I
V
= 35 A
I
= 35 A
D
D
= 20 V
GS
100
0
T = 150°C
J
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance Variation with
Figure 5. On−Resistance vs. Gate−to−Source
Temperature
Voltage
100
80
300
V
GS
= −5 V
V
DS
= 20 V
60
T = 175°C
J
T = 25°C
J
30
40
T = −55°C
J
T = 175°C
J
T = 25°C
J
20
0
T = −55°C
J
3
2
4
6
8
10
12
14
16
18
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 7. Diode Forward Voltage vs. Current
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5
NVC040N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10K
20
I
D
= 47 A
V
DD
= 400 V
C
iss
15
10
5
1K
V
= 800 V
= 600 V
DD
C
oss
V
DD
100
10
1
C
rss
0
f = 1 MHz
= 0 V
V
GS
−5
0
10 20 30 40 50 60 70 80 90 100 110
0.1
1
10
100
800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 8. Gate−to−Source Voltage vs. Total
Figure 9. Capacitance vs. Drain−to−Source
Charge
Voltage
60
50
40
30
20
500
100
V
= 20 V
GS
Starting T = 25°C
J
Starting T = 150°C
J
10
1
10
0
Typical performance based
on characterization data
R
= 0.43°C/W
ꢂ
JC
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
175
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 10. Unclamped Inductive Switching
Capability
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
500
100
100K
10K
1K
Single Pulse
This area is
limited by
R
= 0.43°C/W
ꢂ
JC
T
C
= 25°C
R
DS(on)
10 ꢁ s
10
100 ꢁ s
1
1 ms
10 ms
100 ms
Single Pulse
T = Max Rated
100
10
0.1
J
Curve bent to
measured data
R
= 0.43°C/W
ꢂ
JC
T
C
= 25°C
0.01
0.1
1
10
100
1K
5K
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 12. Safe Operating Area
Figure 13. Single Pulse Maximum Power
Dissipation
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6
NVC040N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢂ
ꢂ
JC
JC
0.01
Single Pulse
R
= 0.43°C/W
ꢂ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢂ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction−to−Ambient Thermal Response
ORDERING INFORMATION AND PACKAGE MARKING
Orderable Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NVC040N120SC1
No Marking
Die
Wafer
N/A
N/A
N/A
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7
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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