NVC160N120SC1 [ONSEMI]
Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die;
| 型号： | NVC160N120SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide MOSFET, N‐Channel, 1200 V, 160 mΩ, Bare Die |
| 文件： | 总8页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 160 mohm,
1200ꢀV, M1, Bare Die
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
224 mꢀ @ 20 V
17 A
N−CHANNEL MOSFET
NVC160N120SC1
Description
D
Silicon Carbide (SiC) MOSFET uses a completely new technology
that provide superior switching performance and higher reliability
compared to Silicon. In addition, the low ON resistance and compact
chip size ensure low capacitance and gate charge. Consequently,
system benefits include highest efficiency, faster operation frequency,
increased power density, reduced EMI, and reduced system size.
G
S
DIE DIAGRAM
G
Features
• 1200 V @ T = 175°C
J
• Typ R
= 160 mꢀ at V = 20 V, I = 10 A
GS D
DS(on)
• High Speed Switching with Low Capacitance
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Applications
• Automotive Traction Inverter
• Automotive DC−DC Converter for EV/HEV
S1
S2
Die Information
S Wafer Diameter
6 inch
S Die Size
2,070 x 2,420 ꢁ m
S Metallization
⋅ Top
Ti/TiN/Al
5 ꢁ m
⋅ Back
Ti/NiV/Ag
S Die Thickness
S Gate Pad Size
Typ. 200 ꢁ m
600 x 330 ꢁ m
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
April, 2022 − Rev. 1
NVC160N120SC1/D
NVC160N120SC1
Die Cross Section
Die Layout
2070
600
Source
2
Source
1
Source
3
Passivation
(Polyimide)
330
G
N- Epic
2420
1417.5
S1
S2
N+
Substrate
601
601
Passivation Information
− Passivation Material: Polymide (PSPI)
− Passivation Type: Local Passivation
− Passivation Thickness 10 ꢁ m
: Passivation Area
Die Layout
Figure 1. Bare Die Dimensions
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2
NVC160N120SC1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Value
1200
Unit
V
Drain−to−Source Voltage
Gate−to−Source Voltage
V
DSS
V
−15/+25
−5/+20
V
GS
Recommended Operation Values of
Gate−to−Source Voltage
T
C
< 175°C
V
GSop
V
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
17
A
ꢂ
JC
Power Dissipation R
P
119
12
W
A
ꢂ
D
JC
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
D
ꢂ
JC
Power Dissipation R
P
59
W
A
ꢂ
D
JC
Pulsed Drain Current (Note 2)
Single Pulse Surge Drain Current Capability
T
= 25°C
I
69
140
C
DM
T
C
= 25°C, t = 10 ꢁ s, R = 4.7
ꢀ
I
A
p
G
DSC
Operating Junction and Storage Temperature Range
Source Current (Body Diode)
T , T
−55 to +175
11
°C
A
J
stg
I
S
Single Pulse Drain−to−Source Avalanche
E
AS
128
mJ
Energy (I
= 16 A, L = 1 mH) (Note 3)
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
R
1.3
°C/W
ꢂ
JC
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 128 mJ is based on starting T = 25°C; L = 1 mH, I = 16 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
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3
NVC160N120SC1
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise stated)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
600
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
250
1
ꢁ A
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
DS
ꢁ
A
GSS
Gate Threshold Voltage
V
R
V
= V , I = 2.5 mA
1.8
−5
−
3.1
−
4.3
+20
224
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 12 A, T = 25_C
162
247
3
mꢀ
DS(on)
D
J
= 20 V, I = 12 A, T = 150_C
−
D
J
Forward Transconductance
g
FS
= 10 V, I = 12 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
665
50
−
−
−
−
−
−
−
−
pF
nC
ISS
GS
GS
DS
C
OSS
RSS
C
5
Q
V
= −5/20 V, V = 600 V, I = 16 A
34
G(tot)
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
6
G(th)
Q
12.5
9.6
1.4
GS
GD
Q
R
f = 1 MHz
ꢀ
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
11
19
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 16 A, R = 6 ꢀ,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
15
d(off)
t
f
8
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
200
34
ꢁ
J
ON
OFF
TOT
E
E
234
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V
= −5 V
−
−
−
−
11
69
A
A
SD
GS
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
SDM
GS
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
V
V
V
= −5 V, I = 6 A
−
−
−
−
−
−
−
4
10
−
V
ns
nC
ꢁ J
A
SD
GS
SD
t
= −5/20 V, I = 16 A,
15
45
3.9
6.2
7.4
7
RR
GS
S
SD
dI /dt = 1000 A/ꢁ s
Q
−
RR
E
REC
−
I
−
RRM
Ta
−
ns
ns
Discharge Time
Tb
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NVC160N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
50
40
30
20
4.0
10 V
V
= 12 V
GS
19 V
3.5
3.0
2.5
2.0
1.5
V
= 20 V
GS
15 V
18 V
16 V
17 V
17 V
18 V
16 V
19 V
15 V
12 V
10 V
V
GS
= 20 V
10
0
1.0
0.5
0
2
4
6
8
10
0
10
20
I , DRAIN CURRENT (A)
30
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 2. On−Region Characteristics
Figure 3. Normalized On−Resistance vs. Drain
Current and Gate Voltage
700
600
500
1.9
1.7
1.5
1.3
1.1
I = 12 A
D
I
V
= 12 A
D
= 20 V
GS
400
300
200
T = 150°C
J
T = 25°C
J
0.9
0.7
100
0
−75 −50 −25
0
25 50 75 100 125 150 175
9
10 11 12 13 14 15 16 17 18 19 20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 4. On−Resistance Variation with
Figure 5. On−Resistance vs. Gate−to−Source
Temperature
Voltage
25
20
15
10
100
V
= −5 V
V
DS
= 20 V
GS
T = 25°C
J
T = 175°C
J
T = 25°C
J
10
5
0
T = 175°C
J
T = −55°C
T = −55°C
J
J
1
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Transfer Characteristics
Figure 7. Diode Forward Voltage vs. Current
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5
NVC160N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
10K
20
V
DD
= 400 V
I
D
= 16 A
15
10
5
V
= 800 V
C
DD
1K
iss
V
= 600 V
DD
100
C
oss
10
1
C
0
rss
f = 1 MHz
= 0 V
V
GS
−5
0
10
20
Q , GATE CHARGE (nC)
30
40
0.1
1
10
100
800
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 8. Gate−to−Source Voltage vs. Total
Figure 9. Capacitance vs. Drain−to−Source
Charge
Voltage
20
16
12
8
50
10
V
GS
= 20 V
Starting T = 25°C
J
Starting T = 150°C
J
4
0
R
= 1.3°C/W
ꢂ
JC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 10. Unclamped Inductive Switching
Capability
Figure 11. Maximum Continuous Drain Current
vs. Case Temperature
100
100K
10K
1K
Single Pulse
R
= 1.3°C/W
ꢂ
JC
T
C
= 25°C
10 ꢁ s
10
1
100 ꢁ s
This area is
limited by R
DS(on)
1 ms
10 ms
100 ms
Single Pulse
T = Max Rated
0.1
100
10
J
R
= 1.3°C/W
ꢂ
JC
T
C
= 25°C
0.01
0.1
1
10
100
1K
5K
0.00001 0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 12. Safe Operating Area
Figure 13. Single Pulse Maximum Power
Dissipation
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6
NVC160N120SC1
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
Notes:
(t) = r(t) x R
1%
P
DM
Z
ꢂ
ꢂ
JC
JC
0.01
Single Pulse
R
= 1.3°C/W
ꢂ
JC
t
Peak T = P
x Z
(t) + T
JC C
1
ꢂ
J
DM
Duty Cycle, D = t /t
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction−to−Ambient Thermal Response
ORDERING INFORMATION AND PACKAGE MARKING
Orderable Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
NVC160N120SC1
N/A
Die
Wafer
N/A
N/A
N/A
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7
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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