NVCR4LS004N10MCA [ONSEMI]
Power MOSFET, N-Channel, 100 V, 4.0 mΩ, Bare Die;
| 型号： | NVCR4LS004N10MCA |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, N-Channel, 100 V, 4.0 mΩ, Bare Die |
| 文件： | 总6页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, N-Channel
100 V, 4.0 mW
NVCR4LS004N10MCA
Features
• Typical R
• Typical Q
= 3.2 mꢀ at V = 10 V
GS
DS(on)
= 47 nC at V = 10 V
g(tot)
GS
• AEC−Q101 Qualified
• RoHS Compliant
ORDERING INFORMATION
DIMENSION (mm)
Die Size
Device
Package
4953 × 2413
NVCR4LS004N10MCA
Wafer
Sawn on Foil
Die Size (Sawn)
4933 15 × 2393 15
1114.8 × 1648.9,
(1114.8 × 2205.8) × 3
Source Attach Area
RECOMMENDED STORAGE CONDITIONS
Gate Attach Area
Die Thickness
385 × 535
Temperature
RH
22 to 28°C
40 to 66%
101.6 19.1
Gate and Source: AlSiCu
Drain: Ti−NiV−Ag (back side of die)
Passivation: Polyimide
Wafer Diameter: 8 inch
Wafer Sawn on UV Tape
Bad Dice Identified in Inking
Gross Die Counts: 2113
The Chip is 100% Probed to Meet the Conditions and Limits
Specified at T = 25°C.
J
Symbol
BV
Parameter
Condition
I = 250 ꢁ A, V = 0 V
D
Min
100
−
Typ
−
Max
−
Unit
V
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Bare Die Drain to Source On Resistance
Source to Drain Diode Voltage
DSS
GS
I
V
DS
V
GS
V
GS
= 100 V, V = 0 V
−
1
ꢁ A
nA
V
DSS
GS
I
=
20 V, V = 0 V
−
−
100
4.0
4.0
1.2
−
GSS
DS
V
GS(th)
= V , I = 250 ꢁ A
2.0
−
−
DS
D
*R
I
D
= 5 A, V = 10 V
3.2
−
mꢀ
DS(on)
GS
V
E
I
= 5 A, V = 0 V
−
V
SD
SD
GS
Single Pulse Drain−to−Source
Avalanche Energy
L = 30 ꢁ H, I = 79 A
93.6
−
mJ
AS
AS
*Accurate R
test at die level is not feasible for this thin die as limited by the test contact precision attainable in a die form. The max R
DS(on)
DS(on)
DS(on)
specification is defined from the historical performance of the die in package but is not guaranteed by test in production. The die R
performance depends on the Source wire/ribbon bonding layout.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
NVCR4LS004N10MCA−DIE/D
June, 2022 − Rev. 0
NVCR4LS004N10MCA
MOSFET MAXIMUM RATINGS in Reference to the FDBL86066−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Ratings
100
Unit
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current R
V
V
A
V
GS
20
I
D
(V = 10) (Note 1)
GS
ꢂ
J
C
T
C
T
C
= 25°C
184
130
= 100°C
E
Single Pulse Avalanche Energy (Note 2)
Power Dissipation R
93.6
mJ
W
AS
P
300
D
ꢂ
JC
Derate Above 25°C
2
−55 to +175
0.5
W/°C
°C
T , T
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient (Note 3)
J
STG
R
°C/W
°C/W
ꢂ
JC
JA
R
43
ꢂ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Current is limited by silicon.
2. Starting T = 25°C, L = 30 ꢁ H, I = 79 A, V = 100 V during inductor charging and V = 0 V during time in avalanche.
J
AS
DD
DD
3. R
is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder
ꢂ
JA
mounting surface of the drain pins. R
presented here is based on mounting on a 1 in pad of 2oz copper.
is guaranteed by design, while R
is determined by the board design. The maximum rating
ꢂ
ꢂ
JC
JA
2
ELECTRICAL CHARACTERISTICS in Reference to the FDBL86066−F085 electrical data in TOLL
(T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
I
= 250 ꢁ A, V = 0 V
100
−
−
−
V
DSS
D
GS
I
V
V
= 100 V,
= 0 V
T = 25°C
J
−
1
ꢁ
A
DSS
DS
GS
I
Gate to Source Leakage Current
V
GS
=
20 V
−
−
100
nA
GSS
ON CHARACTERISTICS
V
R
Gate to Source Threshold Voltage
Drain to Source on Resistance
V
I
= V , I = 250 ꢁ A
2.0
−
−
4.0
4.1
8.8
V
GS(th)
GS
DS
D
= 80 A,
= 10 V
T = 25°C
J
3.3
7.3
mꢀ
ꢀ
DS(on)
D
V
GS
T = 175°C (Note 4)
−
m
J
DYNAMIC CHARACTERISTICS
V
= 50 V, V = 0 V, f = 1 MHz
C
Input Capacitance
−
−
−
−
−
−
−
−
3240
1950
26
−
−
−
−
−
−
−
−
pF
DS
GS
iss
C
Output Capacitance
pF
pF
ꢀ
oss
C
Reverse Transfer Capacitance
Gate Resistance
rss
R
f = 1 MHz
0.5
47
g
Q
Total Gate Charge
V
GS
V
GS
V
DD
= 0 to 10 V, V = 50 V, I = 80 A
nC
nC
nC
nC
g(ToT)
DD
D
Q
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 0 to 2 V, V = 50 V, I = 80 A
6
g(th)
DD
D
= 50 V, I = 80 A
Q
15
D
gs
Q
10
gd
SWITCHING CHARACTERISTICS
V
DD
V
GS
= 50 V, I = 80 A,
t
Turn−On Delay
Rise Time
−
−
−
−
18
9
−
−
−
−
ns
ns
ns
ns
D
d(on)
= 10 V, R
= 6 ꢀ
GEN
t
r
t
Turn−Off Delay
Fall Time
36
13
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTIC
V
Source to Drain Diode Voltage
I
= 80 A, V = 0 V
−
−
−
−
−
−
1.25
1.2
−
V
V
SD
SD
GS
I
= 40 A, V = 0 V
GS
SD
I = 80 A, dI /dt = 1000 A/ꢁ s
F
t
Reverse Recovery Time
32
243
ns
nC
SD
rr
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. The maximum value is specified by design at T = 175°C. Product is not tested to this condition in production.
J
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2
NVCR4LS004N10MCA
TYPICAL CHARACTERISTICS
1.2
1.0
0.8
0.6
0.4
0.2
0.0
200
160
120
80
CURRENT LIMITED
BY SILICON
VGS = 10 V
40
0
0
25
50
75
100
125 150
175
25
50
75
100
125
150
175
TC, CASE TEMPERATURE(oC)
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
2
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
P
DM
0.10
0.05
0.02
0.01
t
1
0.1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P x Z
x R
+ T
J
DM
ꢂ
J
C
ꢂJC C
0.01
100
101
10−5
10−4
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
100
10
VGS = 10 V
o
T
= 25
C
C
FOR TEMPERATURES
o
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
150
SINGLE PULSE
10−5
10−4
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
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3
NVCR4LS004N10MCA
TYPICAL CHARACTERISTICS (continued)
1000
100
10
1000
If R = 0
tAV = (L)(I AS )/(1.3*RATED BV DSS − VDD
)
0
If R
0
tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − VDD) +1]
100
100us
STARTING T = 25oC
J
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
10
1
SINGLE PULSE
1ms
STARTING TJ = 150oC
T
J
= MAX RATED
10ms
100ms
o
T
C
= 25
C
0.1
1
1
10
100
300
0.0001 0.001 0.01 0.1
1
10
100 1000
tAV, TIME IN AVALANCHE (ms)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching Capability
240
300
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
VGS = 0 V
100
200
V
DD
= 10 V
10
1
TJ = 175 o
C
160
120
80
40
0
TJ = 25 o
C
T
J = 175oC
0.1
T
J = 25oC
0.01
0.001
TJ = −55oC
TJ = −55oC
1
2
3
4
5
6
7
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Forward Diode Characteristics
300
200
100
0
300
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
250 ꢁ s PULSE WIDTH
Tj=25oC
VGS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
240
180
120
60
250 ꢁ s PULSE WIDTH
Tj=175oC
0
0
1
2
3
4
5
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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4
NVCR4LS004N10MCA
TYPICAL CHARACTERISTICS (continued)
30
25
20
15
10
5
2.8
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 250 ꢁ s
DUTY CYCLE = 0.5% MAX
2.4
2.0
1.6
1.2
0.8
0.4
ID = 80 A
ID = 80 A
VGS = 10 V
T
J = 175oC
TJ = 25oC
6
0
4
5
7
8
9
10
−80 −40
0
40
80
120 160
200
TJ, JUNCTION TEMPERATURE ( oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. RDS(on) vs. Gate Voltage
Figure 12. Normalized RDS(on) vs. Junction
Temperature
1.2
1.10
VGS = VDS
ID = 1 mA
I
D
= 250 ꢁ A
1.0
0.8
0.6
0.4
1.05
1.00
0.95
0.90
−80 −40
0
40
80
120 160
200
−80 −40
0
40
80
120 160
200
TJ, JUNCTION TEMPERATURE ( oC)
TJ, JUNCTION TEMPERATURE ( oC)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10000
10
ID = 80 A
Ciss
VDD = 50 V
8
1000
Coss
VDD = 40 V
VDD = 60 V
6
4
2
0
100
10
f = 1 MHz
GS = 0 V
Crss
V
1
0.1
1
10
100
0
10
20
30
40
50
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 15. Capacitance vs. Drain to Source
Voltage
Figure 16. Gate Charge vs. Gate to Source
Voltage
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5
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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