NVD5407N [ONSEMI]
Power MOSFET;
| 型号： | NVD5407N |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5407N, STD5407N,
NVD5407N
Power MOSFET
40 V, 38 A, Single N−Channel, DPAK
Features
• Low R
DS(on)
www.onsemi.com
• High Current Capability
• Low Gate Charge
I
MAX
D
• STD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
V
R
TYP
DS(ON)
(Note 1)
(BR)DSS
40 V
21 mꢂ @ 10 V
38 A
• These Devices are Pb−Free and are RoHS Compliant
N−Channel
Applications
4
D
• Electronic Brake Systems
• Electronic Power Steering
• Bridge Circuits
2
1
3
DPAK
G
CASE 369C
STYLE 2
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
S
V
DSS
MARKING DIAGRAM
Gate−to−Source Voltage
V
GS
20
V
1
Continuous Drain
Current − R
T
= 25°C
= 100°C
= 25°C
I
38
A
C
D
AYWW
54
07NG
Steady
State
ꢀ
JC
T
C
27
Power Dissipation −
R
Steady
State
T
C
P
75
W
A
D
ꢀ
JC
A
Y
= Assembly Location*
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
Continuous Drain
Current R (Note 1)
Steady
State
T = 25°C
A
I
D
7.6
5.3
2.9
WW
5407N
G
ꢀ
JA
T = 100°C
A
Power Dissipation −
(Note 1)
Steady
State
T = 25°C
A
P
W
D
R
ꢀ
JA
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
Pulsed Drain Current
t = 10 ꢁ s
I
75
A
p
DM
Operating Junction and Storage Temperature
T ,
STG
−55 to
175
°C
J
T
Source Current (Body Diode)
I
36
A
S
ORDERING INFORMATION
Single Pulse Drain−to Source Avalanche
EAS
150
mJ
Device
Package
Shipping†
Energy − (V = 50 V, V = 10 V, I = 17 A,
DD
GS
PK
L = 1 mH, R = 25 ꢂ)
G
NTD5407NT4G
DPAK
(Pb−Free)
2500 / Tape &
Reel
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
260
°C
T
L
STD5407NT4G*
NVD5407NT4G*
DPAK
(Pb−Free)
2500 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
DPAK
(Pb−Free)
2500 / Tape &
Reel
THERMAL RESISTANCE RATINGS (Note 1)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient (Note 1)
Symbol
Max
2.0
52
Unit
°C/W
°C/W
R
R
θ
JC
JA
θ
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
October, 2016 − Rev. 7
NTD5407N/D
NTD5407N, STD5407N, NVD5407N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
39
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
1.0
10
ꢁ
A
DSS
GS
DS
J
= 40 V
= 0 V, V =
GS
T = 100°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
30 V
100
nA
GSS
DS
V
V
= V , I = 250 ꢁ A
1.5
3.5
V
GS(TH)
GS
DS
D
Gate Threshold Temperature
Coefficient
V
/T
−6.0
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= 10 V, I = 20 A
21
32
15
26
40
mꢂ
DS(on)
GS
D
V
GS
= 5.0 V, I = 10 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
GS
= 10 V, I = 18 A
S
D
C
615
173
80
1000
pF
nC
ISS
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
C
OSS
RSS
V
DS
= 32 V
Reverse Transfer Capacitance
Total Gate Charge
Q
20
G(TOT)
V
GS
= 10 V, V = 32 V,
DS
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
2.25
10.5
GS
I
D
= 38 A
GD
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
6.8
17
66
51
ns
ns
d(ON)
t
r
V
= 10 V, V = 32 V,
GS
DD
I
D
= 38 A, R = 2.5 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
SWITCHING CHARACTERISTICS, V = 5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
10
175
13
d(ON)
t
r
V
= 5 V, V = 20 V,
DD
GS
I
D
= 20 A, R = 2.5 ꢂ
G
Turn−Off Delay Time
Fall Time
t
d(OFF)
t
f
23
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
V
T = 25°C
0.9
0.75
38
1.1
V
SD
J
V
= 0 V,
GS
I = 5.0 A
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
20.5
17
a
V
= 0 V, dI /dt = 100 A/ꢁ s,
S
GS
I = 15 A
S
Discharge Time
b
Reverse Recovery Charge
Q
40
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ꢁ s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTD5407N, STD5407N, NVD5407N
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
60
V
GS
= 7 V to 10 V
T = 25°C
J
V
DS
≥ 10 V
6 V
50
40
30
20
5.5 V
5 V
4.5 V
T = 100°C
J
4 V
10
0
10
0
T = 25°C
J
3.5 V
T = −55°C
J
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.105
0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
0.005
0.08
0.07
0.06
0.05
0.04
T = 25°C
I
= 38 A
J
D
T = 25°C
J
V
= 5 V
GS
0.03
0.02
0.01
V
GS
= 10 V
3
4
5
6
7
8
9
10
11
12
10
15
20
25
30
35
40
I
D,
DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
10000
1000
100
2
V
GS
= 0 V
I
V
= 20 A
D
= 10 V
1.8
GS
T = 175°C
J
1.6
1.4
1.2
1
10
1
T = 100°C
J
0.8
0.6
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NTD5407N, STD5407N, NVD5407N
TYPICAL PERFORMANCE CURVES
1800
1200
15
35
28
21
14
V
= 0 V
V
GS
= 0 V
T = 25°C
DS
J
C
12
iss
QT
9
6
V
DS
V
GS
C
rss
C
Q
GS
iss
Q
GD
600
0
3
0
7
0
C
oss
I
= 36 A
D
T = 25°C
C
J
rss
0
5
10
15
20
10
5
0
5
10
15
20
25
30
V
GS
V
DS
Q , TOTAL GATE CHARGE (nC)
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 8. Gate−To−Source and
Figure 7. Capacitance Variation
Drain−To−Source Voltage vs. Total Charge
1000
15
V
I
= 32 V
= 38 A
= 10 V
14
13
12
11
10
9
V
= 0 V
DS
GS
T = 25°C
J
D
t
t
d(off)
V
GS
f
100
10
1
t
r
8
7
6
5
4
3
2
1
0
t
d(on)
1
10
100
0.3
0.6
0.9
1.2
R , GATE RESISTANCE (OHMS)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
V
GS
= 10 V
SINGLE PULSE
= 25°C
T
C
100
10
1
10 ꢁ s
100 ꢁ s
1 ms
10 ms
dc
R
LIMIT
DS(on)
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NTD5407N, STD5407N, NVD5407N
TYPICAL PERFORMANCE CURVES
D = 0.5
1
0.2
0.1
0.05
0.02
P
(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.1
0.01
READ TIME AT t
1
SINGLE PULSE
t
1
T
J(pk)
− T = P
R
ꢀ
(t)
JC
C
(pk)
t
2
DUTY CYCLE, D = t /t
1
2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (s)
Figure 12. Thermal Response
www.onsemi.com
5
NTD5407N, STD5407N, NVD5407N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
A
D
Y14.5M, 1994.
E
C
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
A
b3
B
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
c2
4
2
L3
L4
Z
DETAIL A
H
1
3
7. OPTIONAL MOLD FEATURE.
INCHES
DIM MIN MAX
0.086 0.094
A1 0.000 0.005
0.025 0.035
MILLIMETERS
NOTE 7
MIN
2.18
0.00
0.63
0.72
4.57
0.46
0.46
5.97
6.35
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
c
b2
e
BOTTOM VIEW
A
SIDE VIEW
b
b
b2 0.028 0.045
b3 0.180 0.215
M
0.005 (0.13)
C
TOP VIEW
c
0.018 0.024
c2 0.018 0.024
Z
Z
D
E
e
0.235 0.245
0.250 0.265
0.090 BSC
H
2.29 BSC
9.40 10.41
1.40 1.78
2.90 REF
0.51 BSC
0.89 1.27
GAUGE
PLANE
SEATING
PLANE
H
L
L1
L2
0.370 0.410
0.055 0.070
0.114 REF
L2
C
0.020 BSC
L3 0.035 0.050
L
BOTTOM VIEW
A1
L4
Z
−−− 0.040
0.155 −−−
−−−
3.93
1.01
−−−
L1
ALTERNATE
CONSTRUCTIONS
DETAIL A
ROTATED 905 CW
STYLE 2:
PIN 1. GATE
2. DRAIN
SOLDERING FOOTPRINT*
3. SOURCE
4. DRAIN
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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◊
NTD5407N/D
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