NVD5413NT4G [ONSEMI]
功率 MOSFET，60V，30A，26mΩ，单 N 沟道，DPAK;
| 型号： | NVD5413NT4G |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，60V，30A，26mΩ，单 N 沟道，DPAK 晶体管 功率场效应晶体管 |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NTD5413N
Power MOSFET
30 Amps, 60 Volts Single N−Channel
DPAK
Features
• Low R
DS(on)
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• High Current Capability
• Avalanche Energy Specified
• These are Pb−Free Devices
I
D
MAX
V
R
MAX
DS(ON)
(Note 1)
(BR)DSS
Applications
60 V
26 mW @ 10 V
30 A
• LED Lighting and LED Backlight Drivers
• DC−DC Converters
• DC Motor Drivers
• Switch Mode Power Supplies
• Power Supplies Secondary Side Synchronous Rectification
N−Channel
D
MAXIMUM RATINGS (T = 25°C Unless otherwise specified)
J
G
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
S
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage − Nonrepetitive
V
$20
$30
V
GS
V
GS
V
(T < 10 ms)
P
MARKING
DIAGRAM
Continuous Drain
Current R
Steady
State
T
= 25°C
= 100°C
= 25°C
I
30
23
68
A
C
D
q
JC
4
T
C
(Note 1)
Drain
Power Dissipation
Steady
State
T
C
P
W
D
4
R
(Note 1)
q
JC
DPAK
CASE 369AA
STYLE 2
Pulsed Drain Current
t = 10 ms
I
84
A
p
DM
2
1
Operating and Storage Temperature Range
T , T
J
−55 to
+175
°C
stg
3
2
1
Gate
3
Source Current (Body Diode)
I
30
A
S
Drain
Source
Single Pulse Drain−to−Source Avalanche
E
AS
135
mJ
Energy − Starting T = 25°C
J
(V = 50 V , V = 10 V, I = 30 A,
L(pk)
DD
dc
GS
5413N = Device Code
L = 0.3 mH, R = 25 W)
G
Y
= Year
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
WW
G
= Work Week
= Pb−Free Device
THERMAL RESISTANCE RATINGS
Parameter
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Symbol
Max
2.2
Unit
Junction−to−Case (Drain) Steady State
(Note 1)
°C/W
R
q
JC
R
58.5
q
JA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
October, 2008 − Rev. 0
NTD5413N/D
NTD5413N
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified)
J
Characteristics
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
DS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage Temper-
ature Coefficient
V
/T
J
67.5
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
DS
= 0 V
= 60 V
T = 25°C
1.0
50
mA
DSS
GS
J
V
T = 150°C
J
Gate−Body Leakage Current
I
V
DS
= 0 V, V = $20 V
$100
nA
GSS
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
V
= V , I = 250 mA
2.0
3.4
7.9
4.0
0.52
26
V
mV/°C
V
GS(th)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On−Voltage
V
GS(th)
/T
J
V
R
V
= 10 V, I = 20 A
0.37
0.86
18.5
36
DS(on)
GS
D
V
= 10 V, I = 20 A, 150°C
D
GS
Drain−to−Source On−Resistance
V
= 10 V, I = 20 A
mW
DS(on)
GS
DS
D
Forward Transconductance
g
FS
V
= 15 V, I = 20 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 25 V, V = 0 V,
1160
240
100
35
1725
46
pF
nC
iss
DS
GS
f = 1 MHz
Output Capacitance
Transfer Capacitance
Total Gate Charge
C
oss
C
rss
Q
V
= 10 V, V = 48 V,
G(TOT)
GS DS
I
D
= 20 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
1.4
G(TH)
Q
6.5
GS
Q
16.1
GD
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
t
V
= 10 V, V = 48 V,
11
20
28
8.0
ns
d(on)
GS
D
DD
I
= 20 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
d(off)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
V
SD
V
S
= 0 V
T = 25°C
0.87
0.8
1.2
V
GS
J
I
= 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
I
S
= 20 A , V = 0 V ,
dc
52
ns
rr
dc
GS
dI /dt = 100 A/ms
S
t
37
a
Discharge Time
t
b
15
Reverse Recovery Stored Charge
Q
105.7
nC
RR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
†
Device
Package
Shipping
NTD5413NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5413N
TYPICAL PERFORMANCE CURVES
80
80
60
40
T = 25°C
10 V
V
DS
≥ 10 V
J
7 V
60
40
20
0
6 V
T = 125°C
J
20
0
T = 25°C
J
5 V
V
= 4.8 V
GS
T = −55°C
J
0
1
2
3
4
5
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.028
0.026
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
T = 25°C
I
= 20 A
J
D
T = 25°C
J
V
GS
= 10 V
5
6
7
8
9
10
10
20
30
40
50
60
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1000
100
10
2.4
I
V
= 20 A
V
= 0 V
D
GS
2.2
2
= 10 V
GS
T = 150°C
J
1.8
1.6
1.4
1.2
1
T = 125°C
J
0.8
0.6
−50 −25
0
25
50
75
100 125 150 175
5
10 15 20 25 30 35 40 45 50 55 60
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T , JUNCTION TEMPERATURE (°C)
V
DS
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NTD5413N
TYPICAL PERFORMANCE CURVES
2500
2000
1500
1000
500
10
Q
T
V
= 0 V
GS
T = 25°C
J
8
6
4
Q
Q
2
1
C
iss
2
0
I
D
= 20 A
C
oss
T = 25°C
J
C
rss
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
V
= 48 V
= 20 A
= 10 V
DD
V
= 0 V
GS
40
30
20
10
0
I
D
T = 25°C
J
V
GS
t
r
t
d(off)
t
f
t
d(on)
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
140
0 V ≤ V ≤ 10 V
Single Pulse
I
D
= 30 A
GS
120
100
80
60
40
20
0
T
C
= 25°C
100 ms
10 ms
1 ms
10 ms
dc
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T , STARTING JUNCTION TEMPERATURE (°C)
J
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTD5413N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
0.2
0.1
0.05
0.02
10
1
0.01
0.1
0.01
Single Pulse
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.1 10 100 1000
0.001
0.000001
0.00001
0.0001
0.001
0.01
1
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
NTD5413N
PACKAGE DIMENSIONS
DPAK
CASE 369AA−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
SEATING
−T−
PLANE
2. CONTROLLING DIMENSION: INCH.
C
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.63
0.46
0.77
MAX
6.22
6.73
2.38
0.89
0.61
1.14
A
B
C
D
E
F
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
4
2
Z
A
H
S
1
3
H
J
L
9.80 10.40
U
0.46
0.58
2.29 BSC
R
S
U
V
Z
0.180 0.215
0.024 0.040
4.57
0.60
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
F
J
0.020
0.035 0.050
0.155 −−−
−−−
L
STYLE 2:
PIN 1. GATE
2. DRAIN
D 2 PL
M
0.13 (0.005)
T
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTD5413N/D
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