NVG800A75L4DSB [ONSEMI]
VE-Trac Dual: Dual Side Cooling Half-Bridge Power Module for Automotive, 750 V, 800 A, Straight Power Tabs;
| 型号： | NVG800A75L4DSB |
| 厂家： | 
ONSEMI |
| 描述： | VE-Trac Dual: Dual Side Cooling Half-Bridge Power Module for Automotive, 750 V, 800 A, Straight Power Tabs |
| 文件： | 总13页 (文件大小：749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Automotive 750 V, 800 A
Dual Side Cooling
Half-Bridge Power Module
VE-Tract Dual
NVG800A75L4DSB
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Product Description
The NVG800A75L4DSB is part of a family of power modules with
dual side cooling and compact footprints for Hybrid (HEV) and
Electric Vehicle (EV) traction inverter application.
The module consists of two narrow mesa Field Stop (FS4) IGBTs in
a half−bridge configuration. The chipset utilizes the new narrow mesa
IGBT technology in providing high current density and robust short
circuit protection with higher blocking voltage to deliver outstanding
performance in EV traction applications.
AHPM15−CEC
CASE 100DV
Features
• Dual−Side Cooling
• Integrated Chip Level Temperature and Current Sensor
• T
= 175°C for Continuous Operation
vj max
• Ultra−low Stray Inductance
• Low V and Switching Losses
CESAT
• Automotive Grade FS4 IGBT & Soft Diode Chip Technologies
• 4.2 kV Isolated DBC Substrate
• This Device is RoHS Compliant
Typical Applications
• Hybrid and Electric Vehicle Traction Inverter
• High Power DC−DC Converter
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
June, 2020 − Rev. 0
NVG800A75L4DSB/D
VE−Tract Dual NVG800A75L4DSB
PIN DESCRIPTION
Pin #
Pin
N
Pin Function Description
Low Side Emitter
Pin Arrangement
1
2
P
High Side Collector
3
4
H/S COLLECTOR SENSE
H/S CURRENT SENSE
H/S EMITTER SENSE
H/S GATE
High Side Collector Sense
High Side Current Sense
High Side Emitter Sense
High Side Gate
5
6
7
H/S TEMP SENSE (CATHODE)
H/S TEMP SENSE (ANODE)
~
High Side Temp sense Diode Cathode
High Side Temp sense Diode Anode
Phase Output
8
9
10
11
12
13
14
15
L/S CURRENT SENSE
L/S EMITTER SENSE
L/S GATE
Low Side Current Sense
Low Side Emitter Sense
Low Side Gate
L/S TEMP SENSE (CATHODE)
L/S TEMP SENSE (ANODE)
L/S COLLECTOR SENSE
Low Side Temp sense Diode Cathode
Low Side Temp sense Diode Anode
Low Side Collector Sense
Materials
DBC Substrate: Al O isolated substrate, basic isolation,
2
3
and copper on both sides
Lead Frame:
Copper with Tin electro−plating
Flammability Information
All materials present in the power module meet UL
flammability rating class 94V−0
MODULE CHARACTERISTICS
Symbol
Parameter
Rating
−40 to 175
−40 to 125
4200
Unit
°C
T
vj
Continuous Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage, DC, t = 1 s
Terminal to Terminal
T
STG
°C
V
ISO
V
Creepage
6.0
mm
mm
−
Clearance
CTI
Terminal to Terminal
3.2
Comparative Tracking Index
>600
Min
Typ
8
Max
L
Stray Inductance
nH
mW
g
sCE
R
Module Lead Resistance, Terminals − Chip
Module Weight
0.15
75
CC’+EE’
G
M
M4 Screws for Module Terminals
2.2
Nm
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2
VE−Tract Dual NVG800A75L4DSB
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless Otherwise Specified)
VJ
Symbol
IGBT
Parameter
Rating
Unit
V
Collector to Emitter Voltage
Gate to Emitter Voltage
750
20
V
V
A
A
A
CES
GES
V
800
550 (Note 1)
1600
I
Implemented Collector Current
CN
I
Continuous DC Collector Current, Tv
= 175°C, T = 65°C, Ref. Heatsink
Jmax F
C nom
I
Pulsed Collector Current @ V = 15 V, t = 1 ms
GE p
CRM
DIODE
V
Repetitive Peak Reverse Voltage
Implemented Forward Current
750
800
V
A
A
RRM
I
FN
420 (Note 1)
I
F
Continuous Forward Current, Tv
= 175°C, T = 65°C, Ref. Heatsink
Jmax F
1600
I
Repetitive Peak Forward Current, t = 1 ms
A
FRM
p
2
2
20000
18000
I t value
V
R
= 0 V, t = 10 ms,
Tv = 150°C
VJ
A s
p
J
T
= 175°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Verified by characterization, not by test.
THERMAL CHARACTERISTICS (Verified by characterization, not by test.)
Symbol
Parameter
Effective Rth, Junction to Case (Note 2)
Min
Typ
Max
Unit
°C/W
°C/W
IGBT.R
0.05
0.07
th,J−C
IGBT.R
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
0.14
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
Diode.R
Diode.R
Effective Rth, Junction to Case (Note 2)
0.08
0.21
0.10
°C/W
°C/W
th,J−C
Effective Rth, Junction to Fluid, l
= 6 W/m−K, F = 660 N
th,J−F
TIM
10 L/min, 65°C, 50/50 EGW, Ref. Heatsink
2. For the measurement point of case temperature (Tc), DBC discoloration, picker circle print is allowed, please refer to the VE−Trac Dual
assembly guide for additional details about acceptable DBC surface finish.
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3
VE−Tract Dual NVG800A75L4DSB
CHARACTERISTICS OF IGBT (Tvj = 25°C, Unless Otherwise Specified)
Parameters
Conditions
Min
Typ
Max
Unit
Collector to Emitter Saturation
Voltage (Terminal)
V
GE
= 15 V, I = 600 A, Tv = 25°C
−
−
−
1.30
1.42
1.45
1.55
−
−
V
V
CESAT
C
J
Tv = 150°C
J
Tv = 175°C
J
V
V
= 15 V, I = 800 A, Tv = 25°C
−
−
−
1.44
1.64
1.68
−
−
−
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
I
I
Collector to Emitter Leakage
Current
= 0, V = 750 V
Tv = 25°C
J
−
−
−
8
1
−
mA
CES
GE
CE
Tv = 175°C
J
Gate – Emitter Leakage Current
Threshold Voltage
V
V
V
= 0, V
=
20 V
−
4.6
−
−
5.5
2.2
2
400
6.2
−
nA
V
CE
GE
GES
V
, I = 500 mA
C
V
th
CE= GE
Total Gate Charge
−8 to 15 V, V = 400 V
mC
W
Q
GE=
CE
G
Internal Gate Resistance
Input Capacitance
−
−
R
Gint
V
V
V
I
= 30 V, V = 0 V, f = 1 MHz
−
48
−
nF
nF
nF
ns
C
CE
CE
CE
GE
ies
Output Capacitance
= 30 V, V = 0 V, f = 1 MHz
−
1.37
0.15
−
C
GE
oes
Reverse Transfer Capacitance
Turn On Delay, Inductive Load
= 30 V, V = 0 V, f = 1 MHz
−
−
C
GE
res
= 600 A, V = 400 V
Tv = 25°C
J
−
−
−
253
282
287
−
−
−
T
C
CE
d.on
V
GE
= +15/−8 V
Tv = 150°C
J
Rg.on = 4.7 W
Tv = 175°C
J
Rise Time, Inductive Load
Turn Off Delay, Inductive Load
Fall Time, Inductive Load
I
V
= 600 A, V = 400 V
Tv = 25°C
−
−
−
94
112
117
−
−
−
ns
ns
T
C
CE
J
r
= +15/−8 V
Tv = 150°C
GE
J
Rg.on = 4.7 W
Tv = 175°C
J
I
C
= 600 A, V = 400 V
Tv = 25°C
−
−
−
760
790
800
−
−
−
T
CE
J
d.off
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
I = 600 A, V = 400 V
Tv = 25°C
−
−
−
95
140
153
−
−
−
T
C
CE
J
f
ns
V
= +15/−8 V
Tv = 150°C
GE
J
Rg.off = 15 W
Tv = 175°C
J
Turn−On Switching Loss (including
diode reverse recovery loss)
I
= 600 A, V = 400 V, V = +15/−8 V,
mJ
E
ON
C
CE
GE
Ls = 20 nH, Rg.on = 4,7 W
di/dt (Tv = 25°C) = 5.13 A/ns
J
J
di/dt (Tv = 175°C) = 4.11 A/ns
Tv = 25°C
J
−
−
−
21.30
32.55
33.66
−
−
−
Tv = 150°C
J
Tv = 175°C
J
Turn−Off Switching Loss
I = 600 A, V = 400 V, V = +15/−8 V,
C CE GE
E
OFF
mJ
Ls = 20 nH, Rg.off = 15 W
dv/dt (Tv = 25°C) = 2.81 V/ns
J
dv/dt (Tv = 175°C) = 2.11 V/ns
J
Tv = 25°C
J
−
−
−
22.62
31.77
33.60
−
−
−
Tv = 150°C
J
Tv = 175°C
J
Minimum Short Circuit Energy
Withstand
V
GE
= 15 V, V = 400 V
E
SC
CC
J
Tv = 25°C
Tv = 175°C
J
5
7.5
−
−
−
−
J
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VE−Tract Dual NVG800A75L4DSB
CHARACTERISTICS OF INVERSE DIODE (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
= 0 V, I = 600 A,
Min
Typ
Max
Unit
V
F
Diode Forward Voltage
(Terminal)
V
V
Tv = 25°C
−
−
−
1.50
1.46
1.44
1.70
−
−
V
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
= 0 V, I = 800 A,
Tv = 25°C
−
−
−
1.73
1.69
1.68
−
−
−
GE
C
J
Tv = 150°C
J
Tv = 175°C
J
Reverse Recovery Energy
Recovered Charge
I = 600 A, V = 400 V, V = −8 V,
mJ
mC
A
E
F
R
GE
rr
Rg.on = 4.7 W, −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
−
−
−
3.58
11.71
12.33
−
−
−
J
Tv = 150°C
J
Tv = 175°C
J
I = 600 A, V = 400 V, V = −8 V,
Q
F
R
GE
RR
Rg.on = 4.7 W, −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
−
−
−
16.36
47.65
49.78
−
−
−
J
Tv = 150°C
J
Tv = 175°C
J
Peak Reverse Recovery
Current
I = 600 A, V = 400 V, V = −8 V,
Irr
F
R
GE
Rg.on = 4.7 W, −di/dt = 3.12 A/ns (175°C)
Tv = 25°C
−
−
−
220
350
360
−
−
−
J
Tv = 150°C
J
Tv = 175°C
J
SENSOR CHARACTERISTICS (T = 25°C, Unless Otherwise Specified)
VJ
Parameters
Conditions
Min
Typ
Max
Unit
T
sense
Temperature Sense
I = 1 mA,
F
Tv = −40°C
Tv = 25°C
J
−
2.46
(Note 3)
2.96
2.54
−
2.60
(Note 3)
V
J
Tv = 150°C
Tv = 175°C
J
−
−
1.76
1.61
−
−
J
I
Current Sense
R
R
= 5 W
I
I
I
= 1600 A
= 800 A
= 100 A
−
−
−
379
200
43.0
−
−
−
mV
sense
shunt
shunt
C
C
C
−
−
−
644
351
94.0
−
−
−
= 20 W
I
C
I
C
I
C
= 1600 A
= 800 A
= 100 A
3. Measured at chip level
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VE−Tract Dual NVG800A75L4DSB
Figure 1. IGBT Output Characteristic
Figure 2. IGBT Transfer Characteristic
Figure 3. IGBT Output Characteristic
Figure 4. IGBT Output Characteristic
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VE−Tract Dual NVG800A75L4DSB
Figure 5. Gate Charge Characteristic
Figure 6. Capacitance Characteristic
Figure 7. EON vs. Ic
Figure 8. EON vs. Rg
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VE−Tract Dual NVG800A75L4DSB
Figure 9. EOFF vs. Ic
Figure 10. EOFF vs. Rg
Figure 11. IGBT Switching Times vs Ic, TVJ = 255C
Figure 12. IGBT Switching Times vs Ic, TVJ = 1755C
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VE−Tract Dual NVG800A75L4DSB
Figure 13. Reverse Bias Safe Operating Area
Figure 14. IGBT Transient Thermal Impedance
Figure 16. Diode Switching Losses vs. IF
Figure 15. Diode Forward Characteristic
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VE−Tract Dual NVG800A75L4DSB
Figure 18. Diode Transient Thermal Impedance
Figure 17. Diode Switching Losses vs. Rg
Figure 19. Temperature Sensor Characteristic
Figure 20. Current Sensor Characteristic
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VE−Tract Dual NVG800A75L4DSB
Figure 21. Current Sensor Characteristic
Figure 22. Maximum Allowed VCE
ORDERING INFORMATION
Part Number
Device Marking
Package
AHPM15−CEC
Shipping
NVG800A75L4DSB
N875DSB
6 Units / Tube
VE−Trac is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AHPM15−CEC
CASE 100DV
ISSUE A
DATE 03 OCT 2022
#15
#3
#1
#2
GENERIC
MARKING DIAGRAM*
ZZZ
AT
= Assembly Lot Code
= Assembly & Test Site Code
*This information is generic. Please refer to device da-
ta sheet for actual part marking. Pb−Free indicator,
“G” or microdot “ G”, may or may not be present. Some
products may not follow the Generic Marking.
YWW = Year and Work Week Code
XXXXX = Specific Device Code
NNNNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON21353H
AHPM15−CEC
PAGE 1 OF 1
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