NVH4L020N090SC1 [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L;
| 型号： | NVH4L020N090SC1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 900 V, M2, TO247−4L |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 20 mohm, 900 V,
M2, TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
900 V
28 mW @ 15 V
118 A
D
NVH4L020N090SC1
Features
G
• Typ. R
= 20 mW @ V = 15 V
GS
= 16 mW @ V = 18 V
GS
DS(on)
S1: Kelvin Source
S2: Power Source
Typ. R
DS(on)
• Ultra Low Gate Charge (typ. Q
= 196 nC)
G(tot)
S2 S1
N−CHANNEL MOSFET
• Low Effective Output Capacitance (typ. C = 296 pF)
oss
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
D
• Automotive Traction Inverters
• Automotive On Board Charger
• Automotive DC-DC Converter for EV/HEV
S2
S1
G
TO247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
900
V
V
V
Gate−to−Source Voltage
V
GS
+22/−8
+15/−5
H4L020
090SC1
&Z&3&K
$Y
Recommended Operation
T
< 175°C
= 25°C
V
GSop
C
Values of Gate−Source Voltage
Continuous Drain
Current R
Steady
State
T
I
116
484
82
A
W
A
C
DC
q
JC
Power Dissipation
R
P
DC
q
JC
H4L020090SC1
= Specific Device Code
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
Continuous Drain
Current R
Steady
State
T
C
= 100°C
I
DC
&Z
&3
&K
$Y
q
JC
Power Dissipation
R
P
DC
242
504
W
q
JC
= onsemi Logo
Pulsed Drain Current (Note 2)
T = 25°C
A
I
A
DM
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
+175
Source Current (Body Diode)
I
S
106
264
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I = 23 A , L = 1 mH) (Note 3)
L
pk
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,
AS
DD
J
AS
V
= 100 V, V = 15 V.
GS
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2022 − Rev. 1
NVH4L020N090SC1/D
NVH4L020N090SC1
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.31
40
Unit
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Ambient (Note 1)
R
θ
JC
JA
R
θ
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
900
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 1 mA, refer to 25°C
D
500
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
100
250
1
mA
mA
mA
DSS
GS
DS
J
= 900 V
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= +22/−8 V, V = 0 V
DS
GSS
GS
GS
Gate Threshold Voltage
V
R
V
= V , I = 20 mA
1.8
2.7
4.3
+15
28
V
V
GS(TH)
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
−5
GOP
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 60 A, T = 25°C
20
16
27
49
mW
DS(on)
D
J
= 18 V, I = 60 A, T = 25°C
D
J
= 15 V, I = 60 A, T = 175°C
D
J
Forward Transconductance
g
= 20 V, I = 60 A
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 450 V
4415
296
24
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= −5/15 V, V = 720 V,
196
42
nC
G(TOT)
GS
DS
I
= 60 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
G(TH)
Q
78
GS
GD
Q
55
f = 1 MHz
1.6
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
D
= −5/15 V, V = 720 V,
29
28
ns
d(ON)
GS
DS
I
= 60 A, R = 2.5 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
54
d(OFF)
Fall Time
t
f
14
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
611
293
904
mJ
ON
E
OFF
E
TOT
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
106
504
A
A
V
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 2)
I
= −5 V, T = 25°C
J
SDM
Forward Diode Voltage
V
= −5 V, I = 30 A, T = 25°C
3.8
SD
SD
J
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2
NVH4L020N090SC1
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)
J
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
V
= −5/15 V, I = 60 A,
30
244
11
ns
nC
mJ
A
RR
GS
S
SD
dI /dt = 1000 A/ms, V = 720 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
E
REC
I
16
RRM
Ta
17
ns
ns
Discharge Time
Tb
13
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVH4L020N090SC1
TYPICAL CHARACTERISTICS
200
150
100
4
13 V
V
GS
= 15 V
9 V
V
GS
= 10 V
12 V
3
12 V
13 V
15 V
2
10 V
9 V
1
50
0
6 V
7 V
0
0
2
4
6
8
10
0
30
60
90
120
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
1.9
1.7
1.5
1.3
1.1
160
120
80
I
D
= 60 A
I
V
= 60 A
D
= 15 V
GS
40
0
T = 150°C
J
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
5
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
T = 175°C
J
T = −55°C
J
V
GS
= −5 V
T = 25°C
J
T = −55°C
J
T = 175°C
J
60
30
40
T = 25°C
J
20
0
V
DS
= 20 V
3
3
6
9
12
15
1
3
5
7
9
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVH4L020N090SC1
TYPICAL CHARACTERISTICS (continued)
15
10
5
50K
V
DD
= 180 V
I
D
= 60 A
V
DD
= 540 V
10K
1K
C
iss
V
DD
= 720 V
C
oss
C
rss
100
0
10
1
f = 1 MHz
= 0 V
V
GS
−5
0.1
1
10
100
800
175
1
0
50
100
Q , GATE CHARGE (nC)
150
200
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
140
120
100
80
V
GS
= 15 V
T = 25°C
J
10
60
T = 150°C
J
40
20
0
Typical performance based
on characterization data
R
= 0.31°C/W
q
JC
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1E+06
1E+05
1E+04
1E+03
1000
100
10
Single Pulse
R
T
= 0.31°C/W
q
JC
= 25°C
C
10 ms
T
= 25°C
C
100 ms
Single Pulse
R
= 0.31°C/W
q
JC
1
R
Limit
1 ms
10 ms
DS(on)
1E+02
1E+01
Thermal Limit
Package Limit
100 ms/DC
0.1
0.1
1
10
100 1000
0.00001 0.0001 0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
NVH4L020N090SC1
TYPICAL CHARACTERISTICS (continued)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Notes:
P
0.01
DM
Z
q
(t) = r(t) x R
q
JC
JC
R
= 0.31°C/W
0.01
qJC
t
Peak T = P
x Z (t) + T
1
q
J
DM
JC
C
Duty Cycle, D = t /t
t
Single Pulse
0.00001
1
2
2
0.001
0.0001
0.001
t, PULSE TIME (s)
0.01
0.1
1
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Size
Quantity
NVH4L020N090SC1
H4L020090SC1
TO247−4L
Tube
N/A
N/A
30 Units
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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