NVH4L070N120M3S [ONSEMI]
Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L;
| 型号： | NVH4L070N120M3S |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET- EliteSiC, 70 mohm, 1200 V, M3S, TO247-4L |
| 文件： | 总8页 (文件大小：353K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – EliteSiC,
65 mohm, 1200ꢀV, M3S,
TO-247-4L
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
1200 V
87 mW @ 18 V
34 A
D
NVH4L070N120M3S
Features
G
S1: Driver Source
S2: Power Source
• Typ. R
= 65 mW @ V = 18 V
GS
DS(on)
S1
S2
• Ultra Low Gate Charge (Q
= 57 nC)
G(tot)
N−CHANNEL MOSFET
• High Speed Switching with Low Capacitance (C = 57 pF)
oss
• 100% Avalanche Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
D
Typical Applications
S2
S1
• Automotive On Board Charger
• Automotive DC−DC Converter for EV/HEV
G
TO−247−4L
CASE 340CJ
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Symbol
Value
Unit
MARKING DIAGRAM
V
DSS
1200
−10/+22
−3/+18
V
V
V
V
GS
Recommended Operation Values T <175°C
of Gate−to−Source Voltage
V
GSop
C
H4L070
120M3S
AYWWZZ
Continuous Drain
Current (Notes 1, 3)
Steady
State
T =25°C
C
I
D
34
160
24
A
W
A
Power Dissipation
(Note 1)
P
D
Continuous Drain
Current (Notes 1, 3)
Steady T =100°C
State
I
D
C
H4L070120M3S = Specific Device Code
Power Dissipation
(Note 1)
P
80
W
A
D
A
Y
= Assembly Location
= Year
Pulsed Drain Current
(Note 2)
T
C
= 25°C
I
98
DM
WW = Work Week
ZZ
= Lot Traceability
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
A
stg
Source Current (Body Diode)
I
S
31
91
ORDERING INFORMATION
T
C
= 25°C, V = −3 V
GS
Device
Package
Shipping
Single Pulse Drain−to−Source Avalanche
Energy (Note 4)
E
AS
mJ
°C
NVH4L070N120M3S TO−247−4L
30 Units /
Tube
Maximum Lead Temperature for Soldering
(1/25″ from case for 10 s)
T
270
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. The maximum current rating is based on typical R
performance.
AS
DS(on)
4. EAS of 91 mJ is based on starting T = 25°C; L = 1 mH, I = 13.5 A,
J
V
= 100 V, V = 18 V.
GS
DD
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. 0
NVH4L070N120M3S/D
NVH4L070N120M3S
Table 1. THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.94
40
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 1)
R
°C/W
q
JC
R
q
JA
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
I = 1 mA, referenced to 25°C
D
−
0.3
V/°C
(BR)DSS
J
(Note 6)
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−
−
−
−
100
1
mA
mA
DSS
GS
J
V
= 1200 V
Gate−to−Source Leakage Current
ON−STATE CHARACTERISTICS (Note 2)
Gate Threshold Voltage
I
V
= +22/−10 V, V = 0 V
GSS
GS DS
V
R
V
= V , I = 7 mA
2.04
−3
−
2.9
−
4.4
+18
87
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
V
GOP
Drain−to−Source On Resistance
V
= 18 V, I = 15 A, T = 25°C
65
mW
DS(on)
GS
D
J
V
GS
= 18 V, I = 15 A, T = 175°C
−
136
−
D
J
(Note 6)
Forward Transconductance
g
FS
V
DS
= 10 V, I = 15 A (Note 6)
−
12
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
−
1230
57
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
RSS
C
5
Q
V
= −3/18 V, V = 800 V,
57
nC
G(TOT)
GS
DS
I
= 15 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
3.2
9.6
17
G(TH)
Q
GS
GD
Q
R
f = 1 MHz
4.3
W
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
V
= −3/18 V, V = 800 V,
−
−
−
−
−
−
−
9.2
11
−
−
−
−
−
−
−
ns
d(ON)
GS
DS
I
= 15 A, R = 4.7 W
D
G
t
r
Inductive load (Notes 5, 6)
Turn−Off Delay Time
Fall Time
t
29
d(OFF)
t
f
8.8
124
36
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
ON
mJ
E
OFF
E
tot
160
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward
I
V
= −3 V, T = 25°C (Note 6)
−
−
−
−
−
31
98
−
A
V
SD
GS
C
Current
Pulsed Source−Drain Diode Forward
Current (Note 2)
I
SDM
Forward Diode Voltage
V
V
GS
= −3 V, I = 15 A, T = 25°C
4.7
SD
SD
J
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2
NVH4L070N120M3S
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time
t
V
S
= −3/18 V, I = 15 A,
−
−
−
−
−
−
14.4
60
−
−
−
−
−
−
ns
nC
mJ
A
RR
GS
SD
dI /dt = 1000 A/ms, V = 800 V
DS
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
Charge Time
Q
RR
(Note 6)
E
REC
RRM
4.8
8.4
7.9
6.5
I
T
ns
ns
A
Discharge Time
T
B
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. E /E
result is with body diode.
ON OFF
6. Defined by design, not subject to production test.
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3
NVH4L070N120M3S
TYPICAL CHARACTERISTICS
80
60
40
2.0
12 V
V
GS
= 20 V to 15 V
1.5
12 V
V
= 15 V to 20 V
GS
1.0
0.5
20
0
0
2
4
6
8
10
0
4
5
20
40
I , DRAIN CURRENT (A)
60
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.5
2.0
1.5
1.0
500
400
300
200
I
V
= 15 A
I
D
= 15 A
D
= 18 V
GS
T = 150°C
J
0.5
0
100
0
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175 200
8
12
16
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
50
40
30
20
160
140
120
100
80
Etot
R
= 4.7 W
= 800 V
= 18/−3 V
G
V
DS
= 10 V
V
DD
V
GS
Eon
Eoff
T
C
= 25°C
T = 175°C
J
T = 25°C
J
60
10
0
40
20
T = −55°C
J
0
5
10
15
20
7
9
11
13
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 5. Transfer Characteristics
Figure 6. Switching Loss vs. Drain Current
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4
NVH4L070N120M3S
TYPICAL CHARACTERISTICS
160
140
120
100
80
150
Etot
V
= 800 V
= 7.5 A
= 18/−3 V
= 25°C
Etot
Eon
DD
R
= 4.7 W
= 15 A
= 18/−3 V
= 25°C
G
I
D
I
D
V
GS
V
T
GS
T
C
Eon
C
100
50
0
60
Eoff
Eoff
40
20
600
650
700
750
800
0
2
4
6
8
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R , GATE RESISTANCE (W)
G
Figure 7. Switching Loss vs. Drain−to−Source
Figure 8. Switching Loss vs. Gate Resistance
Voltage
150
100
200
100
V
GS
= −3 V
Etot
Eon
R
= 4.7 W
G
T = 175°C
I
V
V
= 7.5 A
10
1
J
D
= 800 V
= 18/−3 V
DD
GS
50
0
T = 25°C
J
Eoff
T = −55°C
J
25
50
75
100
125
150
175
0
2
4
6
8
10
TEMPERATURE (°C)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 9. Switching Loss vs. Temperature
Figure 10. Reverse Drain Current vs. Body
Diode Forward Voltage
18
10K
1K
V
DD
= 400 V
I
D
= 15 A
15
12
C
ISS
V
= 800 V
DD
9
6
3
C
C
OSS
V
DD
= 600 V
100
10
1
RSS
f = 1 MHz
= 0 V
0
V
GS
−3
0
10
20
30
40
50
60
0.1
1
10
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
100
800
Q , GATE CHARGE (nC)
G
V
Figure 11. Gate−to−Source Voltage vs. Total
Figure 12. Capacitance vs. Drain−to−Source
Charge
Voltage
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5
NVH4L070N120M3S
TYPICAL CHARACTERISTICS
40
30
20
100
25°C
150°C
V
GS
= 18 V
10
10
R
= 0.94°C/W
q
JC
1
0
25
0.0001
0.001
0.01
0.1
1
10
50
75
100
125
150
175
T , AVALANCHE TIME (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 13. Unclamped Inductive Switching
Capability
Figure 14. Maximum Continuous Drain
Current vs. Case Temperature
20K
1000
100
10
R
= 0.94°C/W
q
JC
R
= 0.94°C/W
q
JC
T = Max Rated
10K
J
Single Pulse
Single Pulse
T
C
= 25°C
T
C
= 25°C
10 ms
100 ms
1K
1 ms
1
10 ms
R
Limit
DS(on)
0.1
Thermal Limit
Package Limit
100 ms/DC
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
0.1
1
10
100
1000
t, PULSE WIDTH (sec)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 15. Safe Operating Area
Figure 16. Single Pulse Maximum Power
Dissipation
2
1
50% Duty Cycle
20%
10%
5%
0.1
2%
0.01
1%
P
DM
Notes:
= 0.94°C/W
Single Pulse
R
0.001
q
JC
Peak T = P
Duty Cycle, D = t / t
x Z (t) + T
q
JC C
t
1
J
DM
1
2
t
2
0.0001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION
Figure 17. Junction−to−Case Transient Thermal Response
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−4LD
CASE 340CJ
ISSUE A
DATE 16 SEP 2019
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13852G
TO−247−4LD
PAGE 1 OF 1
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