NVHL040N65S3HF [ONSEMI]
Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247 fast recovery;
| 型号： | NVHL040N65S3HF |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET SUPERFET ® III, FRFET®, 650 V , 65 A, 40 mΩ, TO-247 fast recovery |
| 文件： | 总10页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power,
N-Channel, SUPERFET) III,
FRFET)
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
40 mW @ 10 V
65 A
D
650 V, 40 mW, 65 A
NVHL040N65S3HF
Description
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on-resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
G
S
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III HF version provides fast recovery for improved
efficiency in high speed switching applications.
G
D
S
Features
TO−247 Long Leads
• 700 V @ T = 150°C
J
CASE 340CX
• Typ. R
= 31 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 157 nC)
g
MARKING DIAGRAM
• Low Effective Output Capacitance (Typ. C
= 1374 pF)
oss(eff.)
• 100% Avalanche Tested
• NVHL Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
AYWWZZ
NVHL040
N65S3HF
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive On Board Charger HEV−EV
• Automotive DC/DC Converter for HEV−EV
A
YWW
ZZ
= Assembly Plant Code
= Data Code (Year & Week)
= Assembly Lot Code
NVHL040N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022 − Rev. 0
NVHL040N65S3HF/D
NVHL040N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain−to−Source Voltage
Gate−to−Source Voltage
− DC
30
V
− AC (f > 1 Hz)
30
I
D
Drain Current
− Continuous (T = 25°C)
65
A
C
− Continuous (T = 100°C)
45
C
I
Drain Current
− Pulsed (Note 1)
162.5
1009
9
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
AS
AS
I
E
4.46
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
446
W
W/°C
°C
D
C
− Derate Above 25°C
3.57
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. I = 9 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 32.5 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.28
40
Unit
R
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
N/A
Quantity
NVHL040N65S3HF
NVHL040N65S3HF
TO−247
Tube
N/A
30 Units
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2
NVHL040N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 1 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 15 mA, Referenced to 25_C
0.63
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 650 V, V = 0 V
−
−
−
−
28
−
10
−
mA
DSS
DS
GS
V
DS
= 520 V, T = 125_C
C
I
Gate−to−Body Leakage Current
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 2.1 mA
3.0
−
5.0
40
V
GS(th)
DS(on)
GS
DS
D
R
Static Drain−to−Source On Resis-
tance
V
V
= 10 V, I = 32.5 A
−
31
mW
GS
D
g
FS
Forward Transconductance
= 20 V, I = 32.5 A
−
45
−
S
DS
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
6655
143
1374
250
157
49
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
GS
oss(eff.)
DS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
V
= 400 V, I = 32.5 A, V = 10 V
g(tot)
DS D GS
(Note 4)
Q
gs
Q
61
gd
ESR
f = 1 MHz
1.1
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 32.5 A,
−
−
−
−
42.2
27.4
103
3.4
−
−
−
−
ns
ns
ns
ns
d(on)
DD
D
V
= 10 V, R = 2.2 W
GS
g
t
r
(Note 4)
t
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source−to−Drain Diode Forward Current
Maximum Pulsed Source−to−Drain Diode Forward Current
−
−
−
−
−
−
65
162.5
1.3
A
A
V
S
I
SM
V
SD
Source−to−Drain Diode Forward
V = 0 V, I = 32.5 A
GS SD
Voltage
t
Reverse Recovery Time
V
DD
= 400 V, I = 32.5 A,
F
−
−
137
792
−
−
ns
rr
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVHL040N65S3HF
TYPICAL CHARACTERISTICS
200
100
200
8.0 V
V
GS
= 10 V
250 ms Pulse Test
V
GS
= 10 V
8.0 V
7.0 V
6.5 V
T
C
= 150°C
7.0 V
6.5 V
100
6.0 V
6.0 V
5.5 V
10
5.5 V
10
1
1
250 ms Pulse Test
T
C
= 25°C
0.1
0.2
1
10
20
0.1
1
10
20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
200
100
0.06
0.05
0.04
250 ms Pulse Test
= 20 V
T
C
= 25°C
V
DS
V
= 10 V
= 20 V
GS
T = 25°C
J
10
1
V
GS
0.03
0.02
T = 150°C
J
T = −55°C
J
3
4
5
6
7
8
9
0
30
60
90
120
150
180
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
1000
100
10
100K
10K
1K
250 ms Pulse Test
= 0 V
V
GS
C
iss
T = 150°C
J
1
C
oss
f = 1 MHz
100
V
GS
= 0 V
T = 25°C
J
0.1
C
rss
C
C
C
= C + C (C = shorted)
gs gd ds
10
1
iss
0.01
= C + C
oss
rss
ds
gd
= C
gd
T = −55°C
J
0.001
0
0.5
1.0
1.5
2.0
0.1
1
10
100
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVHL040N65S3HF
TYPICAL CHARACTERISTICS
10
8
1.2
V
DD
= 130 V
I
D
= 32.5 A
V
= 0 V
= 10 mA
GS
I
D
1.1
1.0
V
DD
= 400 V
6
4
0.9
0.8
2
0
0
32
64
96
128
160
175
150
−75
−25
25
75
125
175
Q , TOTAL GATE CHARGECHARGE (nC)
T , JUNCTION TEMPERATURE (°C)
J
g
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
300
100
3.0
2.5
2.0
1.5
1.0
30 ms
V
= 10 V
= 32.5 A
GS
I
D
100 ms
1 ms
10
10 ms
DC
Operation in this Area
is Limited by R
DS(ON)
1
T
= 25°C
T = 150°C
Single Pulse
C
0.5
0
J
0.1
−75
−25
25
75
125
1
10
100
1K
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
80
40
35
30
25
20
15
10
70
60
50
40
30
20
5
0
10
0
25
50
75
100
125
0
130
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
260
390
520
650
T , CASE TEMPERATURE (°C)
C
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVHL040N65S3HF
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
1.2
1.0
V
= V
DS
= 2.1 mA
GS
I
D
T = 150°C
A
0.8
0.6
60
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
T = 25°C
A
40
20
0
I
D
= 32.5 A
4
5
6
7
8
9
10
−80
−40
0
40
80
120
160
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. RDS(ON) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
100
If R = 0
t
AV
= (L)(I )/(1.3*RATED BV
− V
)
AS
DSS
DD
If R ≠ 0
= (L/R)In[(I *R)/(1.3*RATED BV
t
AV
− V ) +1]
DD
AS
DSS
Starting T = 25°C
J
10
Starting T = 125°C
J
NOTE: Refer to Application
Notes AN7514 and AN7515
1
0.001
0.01
0.1
1
10
100
t , TIME IN AVALANCHE (ms)
AV
Figure 15. Unclamped Inductive Switching
Capability
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
P
DM
Z
R
(t) = r(t) x R
q
JC
q
JC
0.01
0.01
= 0.28°C/W
q
JC
t
1
Peak T = PDM x Z (t) + T
Duty Cycle, D = t / t
q
J
JC
C
Single Pulse
t
2
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t, RECTANGULAR PULSE DURATION (s)
Figure 16. Transient Thermal Response Curve
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6
NVHL040N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 17. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 18. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVHL040N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
NVHL040N65S3HF
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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9
NVHL040N65S3HF
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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◊
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