NVHL080N120SC1A [ONSEMI]
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L;
| 型号： | NVHL080N120SC1A |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 80mohm, 1200 V, M1, TO247−3L |
| 文件： | 总7页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
MOSFET – 80 mohm,
1200ꢀV, M1, TO-247-3L
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
1200 V
110 mW @ 20 V
31 A
N−CHANNEL MOSFET
NVHL080N120SC1A
Features
D
• Typ. R
= 80 mW
• Ultra Low Gate Charge (typ. Q
DS(on)
= 56 nC)
G(tot)
• Low Effective Output Capacitance (typ. C = 80 pF)
G
oss
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
S
• This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
Typical Applications
• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV
G
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
TO−247−3LD
CASE 340CX
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
V
DSS
1200
−15/+25
−5/+20
V
V
V
Gate−to−Source Voltage
V
GS
MARKING DIAGRAM
Recommended Opera-
tion Values of Gate−to−
Source Voltage
T
C
< 175°C
V
GSop
Continuous Drain
Current R
Steady
State
T
C
= 25°C
I
D
31
A
q
JC
$Y&Z&3&K
NVHL080
N120SC1A
Power Dissipation R
P
178
22
W
A
q
D
JC
JC
Continuous Drain
Current R
Steady
State
T
= 100°C
I
D
C
q
JC
Power Dissipation R
P
D
89
W
A
q
Pulsed Drain Current
(Note 2)
T = 25°C
A
I
132
DM
Single Pulse Surge Drain T = 25°C, t = 10 ms,
I
132
A
A
p
DSC
$Y
= onsemi Logo
Current Capability
R
= 4.7 W
G
&Z
&3
&K
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
NVHL080N120SC1A = Specific Device Code
Source Current (Body Diode)
I
S
18
A
Single Pulse Drain−to−Source Avalanche
E
AS
171
mJ
Energy (I
= 18.5 A, L = 1 mH) (Note 3)
ORDERING INFORMATION
L(pk)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
Package
Shipping
D2PAK−7L
800 /
NVHL080N120SC1A
Tape & Reel
THERMAL RESISTANCE MAXIMUM RATINGS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
Value
0.84
40
Unit
°C/W
°C/W
R
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A,
AS
DD
J
AS
V
= 120 V, V = 18 V.
GS
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2022 − Rev. 2
NVHL080N120SC1A/D
NVHL080N120SC1A
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
I
= 0 V, I = 1 mA
1200
−
−
−
V
(BR)DSS
GS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
= 1 mA, referenced to 25_C
−
700
mV/_C
(BR)DSS
J
D
Zero Gate Voltage Drain Current
I
−
−
−
−
−
−
100
1
V
GS
V
GS
V
GS
= 0 V, V = 1200 V, T = 25_C
mA
mA
mA
DSS
DS
J
= 0 V, V = 1200 V, T = 175_C
DS
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
= +25/−15 V, V = 0 V
1
GSS
DS
Gate Threshold Voltage
V
R
V
= V , I = 5 mA
1.8
−5
−
2.7
−
4.3
+20
110
−
V
V
GS(th)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
V
GS
V
GS
V
DS
= 20 V, I = 20 A, T = 25_C
80
114
13
mW
DS(on)
D
J
= 20 V, I = 20 A, T = 150_C
−
D
J
Forward Transconductance
g
FS
= 20 V, I = 20 A
−
−
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
V
= 0 V, f = 1 MHz, V = 800 V
−
−
−
−
−
−
−
1112
80
−
−
−
−
−
−
−
pF
ISS
GS
GS
DS
C
OSS
RSS
C
6.5
56
Q
V
= −5/20 V, V = 600 V, I = 20 A
nC
G(tot)
DS
D
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
Q
11
GS
Q
12
GD
R
f = 1 MHz
1.7
W
G
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
t
t
V
D
= −5/20 V, V = 800 V,
−
−
−
−
−
−
−
13
20
−
−
−
−
−
−
−
ns
d(on)
GS
DS
I
= 20 A, R = 4.7 W,
G
t
r
Inductive Load
Turn−Off Delay Time
Fall Time
22
d(off)
t
f
10
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
E
258
52
mJ
ON
OFF
TOT
E
E
311
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode
I
V
V
= −5 V, T = 25_C
−
−
−
−
18
A
A
SD
GS
J
Forward Current
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
I
= −5 V, T = 25_C
132
SDM
GS
J
Forward Diode Voltage
V
V
V
= −5 V, I = 10 A, T = 25_C
−
−
−
−
−
4
16
62
5
−
−
−
−
−
V
ns
nC
mJ
A
SD
GS
SD
J
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
t
= −5/20 V, I = 20 A,
RR
GS
S
SD
dI /dt = 1000 A/ms
Q
RR
E
REC
RRM
I
8
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVHL080N120SC1A
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
70
56
42
28
14
0
8
V
GS = 20 V
V
GS = 8 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 15 V
VGS = 16 V
GS = 17 V
VGS = 19 V
GS = 18 V
V
6
4
2
0
VGS = 10 V
V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 18 V
VGS = 17 V
VGS = 10 V
VGS = 8 V
VGS = 16 V
VGS = 15 V
VGS = 20 V
VGS = 19 V
0
4
8
12
16
20
0
10
20
30
40 50
60 70
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
450
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
ID = 20 A
VGS = 20 V
360
270
180
90
ID = 20 A
TJ = 150oC
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150 175
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance vs.
Junction Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
70
56
42
28
14
0
100
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 0 V
TJ = 150 o
C
VDS = 20 V
TJ = 25oC
10
1
TJ = 175 o
C
TJ = −55 oC
TJ = 25 o
C
TJ = −55 oC
0.1
0
3
6
9
12
15
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source−to−Drain Diode Forward
Voltage vs. Source Current
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3
NVHL080N120SC1A
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
20
15
10
5
10000
ID = 20 A
Ciss
VDD = 400 V
1000
VDD = 600 V
Coss
VDD = 800 V
100
Crss
10
f = 1 MHz
VGS = 0 V
1
0.1
0
0
10
20
30
40
50
60
1
10
100
800
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain−to−Source
Voltage
30
10
40
30
20
10
0
R
qJC = 0.84 oC/W
TJ = 25oC
V
GS = 20 V
TJ = 150 oC
1
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
50000
10000
SINGLE PULSE
qJC = 0.84oC/W
C = 25oC
R
100
10
T
10 ms
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1
1000
100
SINGLE PULSE
TJ = MAX RATED
qJC = 0.84oC/W
1 ms
10 ms
0.1
R
100 ms
T
C = 25 oC
0.01
0.1
1
10
100
1000 5000
0.00001
0.0001
0.001
0.01
0.1
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
NVHL080N120SC1A
TYPICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
P
0.2
0.1
DM
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
0.01
Z
R
(t) = r(t) x R
o
qJC
qJC
= 0.84 C/W
SINGLE PULSE
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
0.00001
0.0001
0.001
0.01
0.1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
XXXXXXXXX
AYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON93302G
TO−247−3LD
PAGE 1 OF 1
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ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
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© Semiconductor Components Industries, LLC, 2018
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and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
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