NVHL110N65S3HF [ONSEMI]
Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery;型号: | NVHL110N65S3HF |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 30 A, 110 mΩ, TO-247 fast recovery |
文件: | 总10页 (文件大小:278K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power,
N-Channel, SUPERFET) III,
FRFET)
V
R
MAX
I MAX
D
DSS
DS(on)
650 V
110 mΩ @ 10 V
30 A
D
650 V, 110 mW, 30 A
NVHL110N65S3HF
Description
SUPERFET III MOSFET is onsemi’s brand-new high voltage
super-junction (SJ) MOSFET family that is utilizing charge balance
technology for outstanding low on-resistance and lower gate charge
performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
G
S
N−Channel MOSFET
Consequently, SUPERFET III MOSFET is very suitable for the
various power system for miniaturization and higher efficiency.
SUPERFET III HF version provides fast recovery for improved
efficiency in high speed switching applications.
Features
G
• 700 V @ T = 150°C
D
J
S
• Typ. R
= 89 mW
DS(on)
TO−247 Long Leads
CASE 340CX
• Ultra Low Gate Charge (Typ. Q = 58 nC)
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
g
= 510 pF)
oss(eff.)
MARKING DIAGRAM
• NVHL Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
AYWWZZ
NVHL110
N65S3HF
Compliant
Applications
• Automotive On Board Charger HEV−EV
• Automotive DC/DC Converter for HEV−EV
A
YWW
ZZ
= Assembly Plant Code
= Data Code (Year & Week)
= Assembly Lot Code
NVHL110N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
April, 2022 − Rev. 0
NVHL110N65S3HF/D
NVHL110N65S3HF
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
650
Unit
V
V
DSS
V
GSS
Drain−to−Source Voltage
Gate−to−Source Voltage
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
30
A
C
Continuous (T = 100°C)
19.5
69
C
I
Drain Current
Pulsed (Note 1)
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
380
mJ
AS
AR
E
2.4
mJ
dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
50
P
(T = 25°C)
240
W
W/°C
°C
D
C
Derate Above 25°C
1.92
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 3.5 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 15 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
0.52
40
Unit
R
Thermal Resistance, Junction−to−Case, Max.
Thermal Resistance, Junction−to−Ambient, Max.
_C/W
q
JC
JA
R
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size
Tape Width
Quantity
30 Units
NVHL110N65S3HF
NVHL110N65S3HF
TO−247
Tube
N/A
N/A
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2
NVHL110N65S3HF
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain−to−Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
V
GS
= 0 V, I = 10 mA, T = 150_C
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
I
D
= 20 mA, Referenced to 25_C
0.61
V/_C
DSS
J
I
Zero Gate Voltage Drain Current
V
= 650 V, V = 0 V
−
−
−
−
9
−
10
−
mA
DSS
DS
GS
V
DS
= 520 V, T = 125_C
C
I
Gate−to−Body Leakage Current
V
=
30 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
= V , I = 0.74 mA
3.0
−
5.0
V
GS(th)
DS(on)
GS
DS
D
R
Static Drain−to−Source On Resis-
tance
V
= 10 V, I = 15 A
−
89
110
mW
GS
D
g
FS
Forward Transconductance
V
DS
= 20 V, I = 15 A
−
16
−
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
2753
52
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Equivalent Series Resistance
V
V
= 0 V to 400 V, V = 0 V
510
94
oss(eff.)
DS
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
DS
Q
V
DS
= 400 V, I = 15 A, V = 10 V
58
g(tot)
D
GS
(Note 4)
Q
18
gs
Q
23
gd
ESR
f = 1 MHz
1.6
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 400 V, I = 15 A,
−
−
−
−
27.1
16.9
66
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
V
= 10 V, R = 4.7 W
g
t
r
(Note 4)
t
d(off)
t
f
2.9
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source−to−Drain Diode Forward Current
Maximum Pulsed Source−to−Drain Diode Forward Current
−
−
−
−
−
−
30
69
A
A
V
S
I
SM
V
SD
Source−to−Drain Diode Forward
V
GS
= 0 V, I = 15 A
1.3
SD
Voltage
t
Reverse Recovery Time
V
GS
= 0 V, I = 15 A,
F
−
−
90
−
−
ns
rr
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
128
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
NVHL110N65S3HF
TYPICAL CHARACTERISTICS
100
100
250 ms Pulse Test
= 25°C
250 ms Pulse Test
= 150°C
V
GS
= 10 V
V
GS
= 10 V
T
T
C
C
8.0 V
8.0 V
7.0 V
6.5 V
6.0 V
7.0 V
6.5 V
10
5.5 V
10
6.0 V
5.5 V
1
1
0.5
0.2
0.1
1
10
20
1
10
20
V
DS
, DRAIN−SOURCE VOLTAGE (V)
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
255C
Figure 2. On−Region Characteristics
1505C
100
0.3
0.2
V
= 20 V
DS
250 ms Pulse Test
V
GS
= 10 V
10
T = 25°C
J
0.1
0
V
GS
= 20 V
T = 150°C
T = −55°C
J
J
1
2
3
4
5
6
7
8
0
10
20
30
40
50
60
70
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. Transfer Characteristics
Figure 4. On−Resistance Variation vs. Drain
Current and Gate Voltage
100000
V
GS
= 0 V
10000
1000
100
10
10
1
C
iss
T = 150°C
J
T = 25°C
J
0.1
C
oss
V
= 0 V
GS
f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
0.01
1
C
= C + C
rss
oss
rss
ds
gd
= C
gd
T = −55°C
J
0.001
0.1
0.1
0
0.5
1.0
1.5
2.0
1
10
100
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. Body Diode Forward Voltage
Figure 6. Capacitance Characteristics
Variation vs. Source Current and Temperature
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4
NVHL110N65S3HF
TYPICAL CHARACTERISTICS
10
8
1.2
V = 130 V
DD
I
D
= 15 A
V
= 0 V
= 10 mA
GS
I
D
1.1
1.0
V
DD
= 400 V
6
4
0.9
0.8
2
0
0
12
24
36
48
60
−75
−25
25
75
125
175
Q , TOTAL GATE CHARGE (nC)
G
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Gate Charge Characteristics
Figure 8. Breakdown Voltage Variation vs.
Temperature
100
10
3.0
2.5
2.0
1.5
1.0
I
V
= 15 A
D
= 10 V
100 ms
GS
R
Limit
DS(on)
1 ms
10 ms
1
T
C
= 25°C
R
= 0.52°C/W
q
0.5
0
JC
Single Pulse
100 ms/DC
100
, DRAIN−SOURCE VOLTAGE (V)
DS
0.1
−75
−25
25
75
125
175
1
10
1000
T , JUNCTION TEMPERATURE (°C)
J
V
Figure 9. On−Resistance Variation vs.
Figure 10. Maximum Safe Operating Area
Temperature
40
30
15.0
12.5
10.0
7.5
20
5.0
10
0
2.5
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T , CASE TEMPERATURE (°C)
C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Drain Current vs. Case
Temperature
Figure 12. EOSS vs. Drain−to−Source Voltage
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5
NVHL110N65S3HF
TYPICAL CHARACTERISTICS
400
300
200
1.2
I
= 15 A
I
= 3 mA
D
D
1.1
1.0
0.9
0.8
T = 150°C
A
T = 25°C
A
100
0
0.7
0.6
6
7
8
9
10
−75
−25
25
75
125
175
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (°C)
J
Figure 13. RDS(on) vs. Gate Voltage
Figure 14. Normalized Gate Threshold Voltage
vs. Temperature
100
If R = 0
AV
t
= (L)(I )/(1.3*RATED BV
− V
DD
)
AS
DSS
If R =/ 0
t
= (L/R)ln[(I
*R)/(1.3*RATED BV
− V ) +1]
DSS DD
AV
AS
Starting T = 25°C
J
10
Starting T = 125°C
J
1
0.0001
0.001
0.01
0.1
1
10
t , TIME IN AVALANCHE (ms)
AV
NOTE: Refer to Application Notes AN7514 and AN7515
Figure 15. Unclamped Inductive Switching
Capability
2
1
Duty Cycle − Descending Order
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Notes:
(t) = r(t) x R
P
DM
0.01
Z
q
q
JC
JC
R
= 0.52°C/W
q
JC
t
Peak T = P
Duty Cycle, D = t /t
x Z
(t) + T
JC C
1
q
J
DM
Single Pulse
t
1
2
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 16. Transient Thermal Response
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6
NVHL110N65S3HF
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 17. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 18. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms
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7
NVHL110N65S3HF
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United
States and/or other countries.
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8
NVHL110N65S3HF
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
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9
NVHL110N65S3HF
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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