NVLJWS011N06CLTAG [ONSEMI]
Single N−Channel wDFNW6 Power MOSFET 60 V, 48 A, 9mΩ;
| 型号： | NVLJWS011N06CLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel wDFNW6 Power MOSFET 60 V, 48 A, 9mΩ |
| 文件： | 总7页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel
60 V, 9 mW, 48 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
9 mW @ 10 V
60 V
48 A
13 mW @ 4.5 V
NVLJWS011N06CL
ELECTRICAL CONNECTION
Features
D
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
XXXX
ALYW
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
48
A
C
D
WDFNW6 (2.05x2.05)
CASE 515AD
q
JC
T
C
34
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
46
W
A
D
XXXX = Specific Device Code
R
(Note 1)
q
JC
A
L
Y
W
= Assembly Location
T
C
= 100°C
23
= Wafer Lot
= Year
Continuous Drain
Current R
T = 25°C
A
I
D
12
q
JA
= Work Week
T = 100°C
A
8.5
2.9
1.4
233
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
38
A
Single Pulse Drain−to−Source Avalanche
E
AS
103
mJ
Energy (I
= 2.3 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE
Parameter
Junction−to−Case
Junction−to−Ambient
Symbol
Value
3.3
Unit
°C/W
R
q
JC
R
52
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
April, 2022 − Rev. 1
NVLJWS011N06CL/D
NVLJWS011N06CL
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
27.5
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
mA
nA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Drain−to−Source On Resistance
I
V
= 0 V, V = 20 V
GSS
DS
GS
R
V
= 10 V, I = 10 A
7.7
9
mW
DS(on)
GS
GS
GS
D
V
= 4.5 V, I = 10 A
10.7
13
2.0
D
Gate Threshold Voltage
V
V
= V , I = 34 mA
1.2
V
GS(TH)
DS
D
Gate Threshold Voltage Temperature
Coefficient
V
/T
−5.6
mV/°C
GS(TH)
J
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
=6 V, I = 10 A
39
S
FS
DS
D
C
912
460
8
pF
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 25 V
DS
OSS
RSS
GS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
DS
= 48 V; I = 10 A, V = 4.5 V
6.3
13.6
1.4
2.5
1.4
2.7
nC
nC
G(TOT)
Q
G(TOT)
D
GS
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
V
DS
= 48 V; I = 10 A,
D
Q
GS
GD
GP
V
GS
= 10 V
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Turn−Off Delay Time
Rise Time
t
8.1
23.3
3.0
ns
d(ON)
t
d(OFF)
V
= 10 V, V = 48 V,
DS
GS
D
I
= 10 A, R = 6 W
G
t
r
Fall Time
t
f
3.6
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.82
0.69
32
1.2
V
SD
J
V
SD
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
15.8
16
a
V
GS
I
= 0 V, dI/dt = 100 A/ms,
= 10 A, V = 48 V
SD
DS
Discharge Time
b
Reverse Recovery Charge
Q
20
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVLJWS011N06CL
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
4.5 V
= 10 V to 7 V
V
DS
= 10 V
45
40
35
30
25
20
15
V
GS
4.0 V
3.5 V
3.0 V
5.0 V
6.0 V
50
40
30
20
10
0
T = 25°C
J
10
5
T = 175°C
J
T = −55°C
J
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
45
40
35
30
25
20
15
10
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
I
= 10 A
V
= 4.5 V
= 10 V
GS
V
GS
6
4
2
0
5
0
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.5
100
10
1
T = 175°C
J
V
= 10 V
= 10 A
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
1.0
0.5
0.01
0.001
T = 25°C
J
0.0001
−50 −25
0
25
50
75 100 125 150 175
10 15 20 25 30 35 40 45 50 55 60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWS011N06CL
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
C
ISS
7
6
5
4
3
C
OSS
100
Q
Q
GD
GS
10
1
T = 25°C
D
J
V
= 0 V
2
1
0
GS
I
= 10 A
C
RSS
T = 25°C
J
V
DS
= 48 V
f = 1 MHz
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
t
V
GS
= 0 V
d(off)
V
V
= 10 V
= 48 V
= 10 A
GS
T = 175°C
J
DS
t
f
I
D
T = 150°C
J
t
r
10
T = 125°C
J
t
d(on)
10
T = 25°C
J
T = −55°C
J
1
1
1
10
R , GATE RESISTANCE (W)
100
0.1 0.2 0.3 0.4 0.5 0.6
0.7 0.8 0.9 1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
T
= 100°C
J(initial)
T
= 25°C
C
10 ms
Single Pulse
≤ 10 V
1
V
GS
1
0.5 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVLJWS011N06CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
TIME (s)
0.1
1
10
100
1000
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWS011N06CLTAG
011N
WDFNW6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVLJWS011N06CL
PACKAGE DIMENSIONS
WDFNW6 2.05x2.05, 0.65P
CASE 515AD
ISSUE O
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6
NVLJWS011N06CL
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A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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◊
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