NVLJWS070N06CLTAG [ONSEMI]
Single N−Channel µCool™ Power MOSFET 60 V, 62 mΩ, 11 A;型号: | NVLJWS070N06CLTAG |
厂家: | ONSEMI |
描述: | Single N−Channel µCool™ Power MOSFET 60 V, 62 mΩ, 11 A |
文件: | 总7页 (文件大小:154K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
N-Channel
60 V, 62 mW, 11 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
62 mW @ 10 V
85 mW @ 4.5 V
60 V
11 A
NVLJWS070N06CL
ELECTRICAL CONNECTION
Features
D
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S
N−CHANNEL MOSFET
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
11
A
C
D
070N
ALYW
q
JC
T
C
8
WDFNW6 (2.05x2.05)
CASE 515AD
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
15
W
A
D
R
(Note 1)
q
JC
070N = Specific Device Code
T
C
= 100°C
8
A
L
Y
W
= Assembly Location
Continuous Drain
Current R
T = 25°C
A
I
D
4.4
3.1
2.4
1.2
31
= Wafer Lot
= Year
q
JA
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
= Work Week
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
13
17
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 0.4 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
9.8
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
63
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
July, 2022 − Rev. 0
NVLJWS070N06CL/D
NVLJWS070N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
26
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
mA
DSS
GS
DS
J
V
= 60 V
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 6 mA
1.2
2.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.5
51
mV/°C
mW
GS(TH)
J
R
V
= 10 V
= 4.5 V
I
I
= 5 A
= 5 A
62
85
DS(on)
GS
GS
D
V
68
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
=10 V, I = 5 A
11
S
FS
DS
D
C
160
81
2
pF
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
DS
GS
Reverse Transfer Capacitance
Total Gate Charge
Q
= 4.5 V, V = 48 V; I = 5 A
8
nC
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
Q
V
= 10 V, V = 48 V; I = 5 A
18
1.8
2.5
2.0
2.2
GS
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
GS
GD
GP
V
= 10 V, V = 48 V; I = 5 A
GS
DS
D
Q
V
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
4.4
1.3
9.4
1.3
ns
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
I
= 5 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.91
0.81
16
9
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 5 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 5 A
Discharge Time
7
b
Reverse Recovery Charge
Q
7
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVLJWS070N06CL
TYPICAL CHARACTERISTICS
14
12
10
8
14
12
10
V
DS
= 6 V
V
GS
= 4.0 V to 10 V
3.5 V
3.0 V
8
6
4
6
T = 25°C
J
4
.
2
0
2
0
T = 175°C
J
T = −55°C
J
0
1
2
3
4
5
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
80
75
70
65
60
55
50
160
140
120
100
80
T = 25°C
J
T = 25°C
D
J
I
= 5 A
V
= 4.5 V
GS
60
V
= 10 V
GS
40
20
0
45
40
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
10
1
T = 175°C
J
V
= 10 V
= 5 A
GS
I
D
T = 150°C
J
T = 125°C
J
0.1
0.01
T = 85°C
J
1.0
0.5
0.001
T = 25°C
J
0.0001
−50 −25
0
25
50
75
100 125 150 175
10 15 20 25 30 35 40
45 50 55 60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWS070N06CL
TYPICAL CHARACTERISTICS
10
1000
100
V
DS
= 48 V
9
8
7
6
5
4
3
2
I
D
= 5 A
C
T = 25°C
J
ISS
C
OSS
10
1
Q
Q
GD
GS
V
= 0 V
GS
T = 25°C
J
C
RSS
1
0
f = 1 MHz
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
V
= 10 V
= 48 V
V
GS
= 0 V
GS
10
V
DS
I
D
= 5 A
T = 175°C
J
T = 150°C
J
t
t
d(off)
10
t
t
f
T = 125°C
J
r
d(on)
T = 25°C
J
T = −55°C
J
1
1
1
10
R , GATE RESISTANCE (W)
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
R
Limit
T
V
= 25°C
DS(on)
C
Thermal Limit
Package Limit
≤ 10 V
GS
Single Pulse
10
1
100
10
T (initial) = 25°C
J
10 ms
1 ms
10 ms
0.5 ms
T (initial) = 125°C
J
0.1
1
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVLJWS070N06CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
10
1
2%
1%
Single Pulse
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (sec)
Figure 13. Transient Thermal Response Curve
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWS070N06CLTAG
070N
WDFN6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVLJWS070N06CL
PACKAGE DIMENSIONS
WDFNW6 2.05x2.05, 0.65P
CASE 515AD
ISSUE O
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6
NVLJWS070N06CL
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