NVLJWS6D0N04CLTAG [ONSEMI]
Single N−Channel µCool™ Power MOSFET 40V, 68A, 5mΩ;
| 型号： | NVLJWS6D0N04CLTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N−Channel µCool™ Power MOSFET 40V, 68A, 5mΩ |
| 文件： | 总7页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel
40 V, 5 mW, 68 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
5 mW @ 10 V
8 mW @ 4.5 V
40 V
68 A
NVLJWS6D0N04CL
Features
ELECTRICAL CONNECTION
D
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
G
• These Devices are Pb−Free and are RoHS Compliant
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
N−CHANNEL MOSFET
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
MARKING
DIAGRAM
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
68
A
C
D
q
JC
XXXX
ALYW
T
C
48
(Notes 1, 3)
Steady
State
WDFNW6 (2.05x2.05)
CASE 515AD
Power Dissipation
T
C
P
46
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
23
XXXX = Specific Device Code
Continuous Drain
Current R
T = 25°C
A
I
D
15
A
L
Y
W
= Assembly Location
= Wafer Lot
= Year
q
JA
T = 100°C
A
11
(Notes 1, 2, 3)
Steady
State
= Work Week
Power Dissipation
T = 25°C
A
P
2.5
1.2
277
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
ORDERING INFORMATION
A
p
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
38
A
Single Pulse Drain−to−Source Avalanche
E
AS
113
mJ
Energy (I
= 4 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.3
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
61
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2022 − Rev. 1
NVLJWS6D0N04CL/D
NVLJWS6D0N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
OFF CHARACTERISTICS
Symbol
Test Condition
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
21
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 34 mA
1.2
2.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.3
4
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 10 A
= 10 A
5
8
DS(on)
GS
GS
D
mW
V
= 4.5 V
6
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
V
=3 V, I = 10 A
38
S
FS
DS
D
C
1150
475
18
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
GS
= 4.5 V, V = 32 V; I = 10 A
10
nC
nC
G(TOT)
G(TOT)
DS
D
Total Gate Charge
Q
20
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1.7
3.1
3.0
2.6
G(TH)
Q
V
GS
= 10 V, V = 32 V; I = 10 A
nC
V
GS
GD
GP
DS
D
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
9
5
d(ON)
Rise Time
t
r
V
= 10 V, V = 32 V,
DS
GS
D
ns
V
I
= 10 A, R = 6 W
G
Turn−Off Delay Time
t
31
7
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.65
33
1.2
SD
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
15
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 10 A
Discharge Time
t
18
b
Reverse Recovery Charge
Q
15
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVLJWS6D0N04CL
TYPICAL CHARACTERISTICS
V
= 10 V to 6 V
5.0 V
4.5 V
GS
V
DS
= 10 V
60
50
40
30
20
60
50
40
30
20
3.6 V
4.0 V
3.2 V
2.8 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
1
2
3
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
18
16
14
12
10
8
10
9
T = 25°C
J
T = 25°C
D
J
I
= 10 A
8
7
V
= 4.5 V
= 10 V
GS
6
5
V
GS
4
6
3
4
2
2
0
1
0
1
2
3
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1.5
100
10
1
T = 175°C
V
= 10 V
= 10 A
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
1.0
0.5
0.01
0.001
T = 25°C
J
0.0001
−50 −25
0
25
50
75 100 125 150 175
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVLJWS6D0N04CL
TYPICAL CHARACTERISTICS
10K
1K
10
9
C
ISS
8
7
6
5
4
3
C
OSS
100
Q
Q
4
GS
GD
C
RSS
10
1
T = 25°C
J
2
1
0
V
= 0 V
GS
I
D
= 10 A
T = 25°C
J
V
DS
= 32 V
f = 1 MHz
0
2
6
8
10 12 14 16 18 20
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
V
= 10 V
= 32 V
V
GS
= 0 V
GS
DS
I
D
= 10 A
T = 150°C
J
t
d(off)
100
10
t
f
t
t
r
T = 175°C
J
d(on)
10
1
T = −55°C
T = 125°C
T = 25°C
J
J
J
1
1
10
R , GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
T
= 125°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
1
0.5 ms
1 ms
10 ms
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (s)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVLJWS6D0N04CL
TYPICAL CHARACTERISTICS
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.00001 0.0001
0.1
0.000001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVLJWS6D0N04CLTAG
6D0N
WDFNW6
(Pb−Free, Wettable Flanks)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVLJWS6D0N04CL
PACKAGE DIMENSIONS
WDFNW6 2.05x2.05, 0.65P
CASE 515AD
ISSUE O
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6
NVLJWS6D0N04CL
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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◊
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