NVMFD5C462NLWFT1G [ONSEMI]
双 N 沟道，功率 MOSFET，40V，84A，4.7mΩ;
| 型号： | NVMFD5C462NLWFT1G |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，功率 MOSFET，40V，84A，4.7mΩ |
| 文件： | 总7页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVMFD5C462NL
MOSFET – Power, Dual
N-Channel
40 V, 4.7 mW, 84 A
Features
• Small Footprint (5x6 mm) for Compact Design
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• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical
Inspection
4.7 mꢂ @ 10 V
7.7 mꢂ @ 4.5 V
40 V
84 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Dual N−Channel
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D1
D2
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
GS
20
V
G1
G2
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
84
A
C
D
ꢀ
JC
T
C
52
(Notes 1, 2, 3)
Steady
State
S1
S2
Power Dissipation
T
C
P
50
W
A
D
R
(Notes 1, 2)
ꢀ
JC
T
C
= 100°C
25
MARKING
DIAGRAM
Continuous Drain
Current R
T = 25°C
A
I
D
18
ꢀ
JA
T = 100°C
A
15
(Notes 1, 2, 3)
Steady
State
D1 D1
S1
G1
S2
G2
D1
Power Dissipation
T = 25°C
A
P
3.0
2.1
311
W
D
1
R
(Notes 1 & 2)
D1
D2
D2
XXXXXX
AYWZZ
ꢀ
JA
DFN8 5x6
(SO8FL)
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ꢁ s
I
DM
A
A
p
CASE 506BT
D2 D2
Operating Junction and Storage Temperature
T , T
−55 to
°C
J
stg
+ 175
A
Y
= Assembly Location
= Year
Source Current (Body Diode)
I
S
56
A
W
ZZ
= Work Week
= Lot Traceability
Single Pulse Drain−to−Source Avalanche
E
AS
174
mJ
Energy (T = 25°C, I
= 5 A)
J
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.25
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
ꢀ
JC
R
47.3
ꢀ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
July, 2019 − Rev. P3
NVMFD5C462NL/D
NVMFD5C462NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
29
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
ꢁ A
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 40 ꢁ A
1.2
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.0
3.9
6.4
70
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 10 A
= 10 A
4.7
7.7
DS(on)
GS
D
mꢂ
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
= 15 V, I = 10 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
1300
530
22
ISS
Output Capacitance
C
OSS
C
RSS
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
V
GS
= 4.5 V, V = 32 V; I = 25 A
11
G(TOT)
G(TOT)
DS
D
Total Gate Charge
V
GS
= 10 V, V = 32 V; I = 25 A
23
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
3.4
4.7
3
nC
V
G(TH)
Q
GS
GD
GP
V
GS
= 4.5 V, V = 32 V; I = 10 A
DS D
Q
V
3.4
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
11
16
19
6
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 32 V,
DS
GS
D
ns
V
I
= 5 A, R = 1.0 ꢂ
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.86
0.75
29
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
14
ns
a
V
GS
= 0 V, dIS/dt = 25 A/ꢁ s,
I
S
= 5 A
Discharge Time
t
14
b
Reverse Recovery Charge
Q
12
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ꢁ s, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFD5C462NL
TYPICAL CHARACTERISTICS
91
84
77
70
63
56
49
42
35
28
21
14
100
10 to 6.5 V
4.5 V
V
= 10 V
90
80
70
60
50
40
30
20
DS
3.8 V
3.6 V
3.4 V
V
GS
= 3.2 V
T = 25°C
J
10
0
7
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5 1.0 1.5 2.0 2.5
3.0 3.5 4.0 4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
9
8
7
6
5
50
45
40
35
30
25
20
15
10
T = 25°C
J
I
= 10 A
D
T = 25°C
J
V
= 4.5 V
GS
V
= 10 V
GS
4
3
5
0
3
4
5
6
7
8
9
10
5
10 15 20 25 30 35 40 45 50 55
I , DRAIN CURRENT (A)
V
, GATE−TO−SOURCE VOLTAGE (V)
GS
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
100K
I
V
= 10 A
D
T = 175°C
T = 150°C
J
J
10K
1K
= 10 V
GS
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
1
0.1
0.01
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFD5C462NL
TYPICAL CHARACTERISTICS
10K
1K
10
9
C
C
iss
8
7
6
5
4
3
oss
100
Q
Q
gd
gs
C
rss
10
1
T = 25°C
GS
f = 1 MHz
V
I
= 32 V
= 25 A
J
V
DS
2
1
0
= 0 V
D
T = 25°C
J
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
100
V
GS
= 0 V
t
d(off)
t
r
T = 25°C
J
10
t
d(on)
t
f
T = 125°C
J
V
= 4.5 V
= 32 V
GS
V
DS
I
= 25 A
D
T = −55°C
J
1
1
1
10
R , GATE RESISTANCE (ꢂ)
100
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
, SOURCE−TO−DRAIN VOLTAGE (V)
V
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
T
= 25°C
J(initial)
10
10
T
V
= 25°C
C
T
= 100°C
J(initial)
≤ 10 V
GS
10 ꢁ s
Single Pulse
1
0.5 ms
R
Limit
DS(on)
1 ms
10 ms
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFD5C462NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFD5C462NLT1G
5C462L
DFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFD5C462NLWFT1G
462LWF
DFN8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)
CASE 506BT
ISSUE F
1
DATE 23 NOV 2021
2X
SCALE 2:1
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
A
B
E
2X
D1
0.20
C
8
7
6
5
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.
PIN ONE
E1
MILLIMETERS
IDENTIFIER
DIM
A
A1
b
b1
c
MIN
0.90
−−−
0.33
0.33
0.20
NOM
−−−
−−−
0.42
0.42
−−−
5.15 BSC
4.90
4.10
1.70
6.15 BSC
5.90
4.15
1.27 BSC
0.55
−−−
−−−
−−−
0.61
MAX
1.10
0.05
0.51
0.51
0.33
NOTE 7
4X
h
1
2
3
4
c
TOP VIEW
D
A1
D1
D2
D3
E
E1
E2
e
G
h
K
K1
4.70
3.90
1.50
5.10
4.30
1.90
0.10
0.10
C
C
A
DETAIL B
5.70
3.90
6.10
4.40
ALTERNATE
SEATING
PLANE
NOTE 6
DETAIL A
CONSTRUCTION
C
NOTE 4
SIDE VIEW
DETAIL A
0.45
−−−
0.51
0.56
0.48
3.25
1.80
0.65
12
−−−
−−−
_
D2
D3
L
M
N
0.71
3.75
2.20
4X L
K
3.50
2.00
e
1
4
SOLDERING FOOTPRINT*
DETAIL B
4.56
4X
2X
2.08
2X
0.56
b1
8X
0.75
N
E2
M
8
5
4X
G
b
8X
4X
1.40
0.10
0.05
C
C
A B
K1
6.59
4.84
NOTE 3
2.30
BOTTOM VIEW
3.70
GENERIC
MARKING DIAGRAM*
0.70
1
XXXXXX
AYWZZ
4X
1.27
PITCH
1.00
5.55
XXXXXX = Specific Device Code
DIMENSION: MILLIMETERS
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON50417E
DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
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