NVMFS025P04M8LT1G [ONSEMI]
Power MOSFET, Single P-Channel, -40 V, 23 mΩ, -34.6 A;
| 型号： | NVMFS025P04M8LT1G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single P-Channel, -40 V, 23 mΩ, -34.6 A |
| 文件： | 总7页 (文件大小：207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
P-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
23 mW @ −10 V
37 mW @ −4.5 V
-40 V, 23 mW, -34.6 A
−40 V
−34.6 A
NVMFS025P04M8L
P−Channel MOSFET
D (5−8)
Features
• NVMFWS025P04M8L − Wettable Flanks Product
• Small Footprint for Compact Design 5 x 6 mm
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
G (4)
• These Devices are Pb−Free and are RoHS Compliant
S (1,2,3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
Unit
V
MARKING
DIAGRAM
V
DSS
D
Gate−to−Source Voltage
V
20
V
GS
1
S
S
S
G
D
D
Continuous Drain
Current R
T
= 25°C
I
−34.6
A
C
D
DFN5
XXXXXX
AYWZZ
q
JC
T
C
= 100°C
−24.5
(SO−8FL) 5 x 6
CASE 488AA
STYLE 1
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
= 25°C
P
44.1
22.1
−9.4
W
A
D
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
XXXXXX = Specific Device Code
Continuous Drain
Current R
T = 25°C
A
I
D
A
Y
= Assembly Location
= Year
q
JA
T = 100°C
A
−6.6
(Notes 1, 3, 4)
Steady
State
W
ZZ
= Work Week
= Lot Traceability
Power Dissipation
T = 25°C
A
P
3.5
1.8
204
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
J
−55 to
+175
°C
stg
Source Current (Body Diode)
I
36.8
152
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= TBD A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
3.4
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
42.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
June, 2022 − Rev. 2
NVMFS025P04M8L/D
NVMFS025P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown
Voltage Temperature Coefficient
V
/
20.40
mV/°
C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
T = 25°C
−1
mA
nA
V
DSS
J
V
DS
= 0 V,
GS
V
= −40 V
T = 125°C
J
−100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
20 V
GSS
DS
GS
V
V
= V , I = −255 mA
−1.0
−2.4
GS(TH)
GS
DS
D
Negative Threshold Temperature
Coefficient
V
/
4.94
mV/°
C
GS(TH)
T
J
Drain−to−Source On Resistance
R
V
= −10 V, I = −15 A
16.6
23.6
30.8
23
37
mW
DS(on)
GS
D
V
GS
= −4.5 V, I = −7.5 A
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −1.5 V, I = −15 A
S
D
C
V
= 0 V, f = 1.0 MHz,
1058
446
19
pF
iss
GS
V
DS
= −20 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Plateau Voltage
C
rss
GP
V
2.9
V
Total Gate Charge
Q
Q
7.56
1.93
3.4
nC
nC
G(TOT)
V
= −4.5 V, V = −20 V,
DS
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
I
= −7.5 A
D
Q
GS
GD
Q
1.55
16.3
V
= −10 V, V = −20 V,
nC
ns
G(TOT)
GS
GS
DS
= −7.5 A
I
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
16
99
50
58
d(on)
t
r
V
= −4.5 V, V = −20 V,
DS
I
D
= −7.5 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
−0.86
−0.78
39
−1.20
V
SD
GS
J
I
= −15 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
31
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= −15 A
Discharge Time
8
b
Reverse Recovery Charge
Q
35
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
www.onsemi.com
2
NVMFS025P04M8L
60
50
40
30
20
60
−6.0 V
V
= −10 V
GS
V
DS
= −10 V
−4.5 V
−3.6 V
50
40
30
20
−8.0 V
−3.0 V
−2.4 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
100
90
80
70
60
50
40
30
20
40
30
20
T = 25°C
J
T = 25°C
D
J
I
= −15 A
V
= −4.5 V
= −10 V
GS
V
GS
10
0
10
0
2
3
4
5
6
7
8
9
10
2
4
6
8
10
12
14
16
18 20
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
10K
1K
2.0
T = 175°C
V
= −10 V
= −15 A
J
GS
I
D
T = 150°C
J
1.5
1.0
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVMFS025P04M8L
TYPICAL CHARACTERISTICS
10
1K
C
Q
G(TOT)
9
8
7
6
5
4
3
2
ISS
C
OSS
100
Q
Q
GD
GS
C
RSS
10
1
V
I
= −20 V
= −7.5 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0.1
1
10
0
2
4
6
8
10
12
14
16
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V
= 0 V
GS
t
r
100
t
f
t
t
d(off)
d(on)
T = 175°C
J
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
V
V
= −4.5 V
= −20 V
= −7.5 A
J
GS
DS
I
D
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10
1
T
= 150°C
J(initial)
10 ms
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (sec)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NVMFS025P04M8L
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
025P04
025P4W
Package
Shipping
NVMFS025P04M8LT1G
NVMFWS025P04M8LT1G
SO8FL
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
SCALE 2:1
2 X
DATE 25 JUN 2018
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
GENERIC
SIDE VIEW
MARKING DIAGRAM*
DETAIL A
1
8X b
A B
XXXXXX
AYWZZ
0.10
0.05
C
c
e/2
e
L
1
4
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
K
RECOMMENDED
SOLDERING FOOTPRINT*
W
ZZ
= Work Week
= Lot Traceability
E2
2X
PIN 5
M
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
(EXPOSED PAD)
L1
0.495
4.560
2X
1.530
D2
G
2X
BOTTOM VIEW
0.475
3.200
1.330
4.530
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. ANODE
2X
0.905
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
1
3. ANODE
4. NO CONNECT
5. CATHODE
0.965
5. DRAIN
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明