NVMFS5C604NWFT1G [ONSEMI]
单 N 沟道，功率 MOSFET，60V，288A，1.2mΩ;
| 型号： | NVMFS5C604NWFT1G |
| 厂家： | 
ONSEMI |
| 描述： | 单 N 沟道，功率 MOSFET，60V，288A，1.2mΩ |
| 文件： | 总8页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
N-Channel
60 V, 1.2 mW, 288 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
60 V
1.2 mW @ 10 V
288 A
D (5,6)
NVMFS5C604N
Features
• Small Footprint (5x6 mm) for Compact Design
G (4)
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
S (1,2,3)
N−CHANNEL MOSFET
• NVMFS5C604NWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MARKING
DIAGRAMS
DFN5
CASE 506EZ
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S
S
S
G
D
D
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
1
XXXXXX
AYWZZ
V
DSS
DFNW5
CASE 507BA
Gate−to−Source Voltage
V
GS
20
V
D
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
288
204
200
100
40
A
C
D
q
JC
XXXXXX = Specific Device Code
T
C
(Notes 1, 3)
Steady
State
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
I
A
D
q
JA
T = 100°C
A
28
(Notes 1, 2, 3)
Steady
State
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Power Dissipation
T = 25°C
A
P
3.9
1.9
900
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
203
776
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 22 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.75
39
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2022 − Rev. 2
NVMFS5C604N/D
NVMFS5C604N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
13.6
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
GS
16 V
nA
GSS
DS
V
V
= V , I = 250 mA
2.0
4.0
1.2
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−8.5
mV/°C
mW
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
1.0
DS(on)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
6400
4300
24
ISS
Output Capacitance
C
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
80
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
7.0
26
G(TH)
nC
V
Q
= 10 V, V = 48 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
14
4.6
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
16
76
51
51
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.65
100
50
1.0
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
50
b
Reverse Recovery Charge
Q
218
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS5C604N
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
10 V to 6.0 V
V
DS
= 5 V
180
160
140
120
100
80
5.0 V
V
GS
= 4.5 V
60
60
T = 25°C
J
40
40
20
0
20
0
T = 125°C
J
T = −55°C
J
4.0 V
0
0.5
1.0
1.5
2.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.5
4
3
2
1
T = 25°C
J
T = 25°C
D
J
I
= 50 A
1.0
0.5
V
GS
= 10 V
0
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
100
10
V
I
= 10 V
= 50 A
GS
1.8
1.6
1.4
1.2
1.0
D
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.8
0.6
0.1
−50 −25
0
25
50
75
100 125 150 175
0
10
20
30
40
50
60
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS5C604N
TYPICAL CHARACTERISTICS
100K
10K
1000
100
10
30
25
20
10
8
Q
T
C
ISS
Q
6
C
Q
GS
GD
OSS
15
10
4
C
RSS
V = 20 V
DS
V
= 0 V
GS
2
0
5
0
I
D
= 50 A
T = 25°C
J
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
100
V
V
= 10 V
= 20 V
= 50 A
GS
DS
I
D
t
t
d(off)
f
10
t
r
t
d(on)
T = 125°C
T = 25°C T = −55°C
J
J
J
1
10
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10 ms
T
= 25°C
J(initial)
T
= 100°C
J(initial)
10
1
10
V
≤ 10 V
GS
100 ms
1 ms
Single Pulse
T
C
= 25°C
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.1
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
1
10
(V)
100
1000
V
DS
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFS5C604N
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
2
1
NVMFS5C604N 650 mm , 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.0001 0.001
0.01
0.000001 0.00001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
†
Device
Case
Marking
Package
Shipping
NVMFS5C604NT1G
506EZ
5C604N
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFS5C604NWFT1G
507BA
604NWF
DFNW5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO−8FL)
CASE 506EZ
ISSUE A
1
DATE 25 AUG 2021
SCALE 2:1
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24855H
DFN5 5x6, 1.27P (SO−8FL)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
DATE 03 FEB 2021
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26450H
DFNW5 5x6 (FULL−CUT SO8FL WF)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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