NVMFS6B14NL [ONSEMI]
Power MOSFET;
| 型号： | NVMFS6B14NL |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVMFS6B14NL
Power MOSFET
100 V, 13 mW, 55 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
www.onsemi.com
G
• NVMFS6B14NLWF − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
13 mW @ 10 V
19 mW @ 4.5 V
100 V
55 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
16
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
Continuous Drain Cur-
V
GS
V
T
= 25°C
= 100°C
= 25°C
I
D
55
A
C
rent R
(Notes 1, 3)
q
JC
T
C
39
Steady
State
G (4)
Power Dissipation R
(Note 1)
T
C
P
D
94
W
A
q
JC
T
C
= 100°C
47
S (1,2,3)
N−CHANNEL MOSFET
Continuous Drain Cur-
rent R (Notes 1, 2, 3)
T = 25°C
A
I
D
11
q
JA
T = 100°C
A
8.0
3.8
1.9
140
Steady
State
Power Dissipation R
(Notes 1 & 2)
T = 25°C
A
P
D
W
q
JA
MARKING
DIAGRAM
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
p
D
1
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
S
S
S
G
D
D
XXXXXX
AYWZZ
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
Source Current (Body Diode)
I
S
60
29
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
D
Energy (I
= 24 A)
L(pk)
XXXXXX = 6B14NL
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
(NVMFS6B14NL) or
6B14LW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
(NVMFS6B14NLWF)
= Assembly Location
= Year
A
Y
THERMAL RESISTANCE MAXIMUM RATINGS
W
ZZ
= Work Week
= Lot Traceability
Parameter
Symbol
Value
1.6
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
JA
R
40
ORDERING INFORMATION
q
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
2
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2016 − Rev. 1
NVMFS6B14NL/D
NVMFS6B14NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
80
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 80 V
T = 25°C
25
DSS
GS
DS
J
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 16 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.0
3.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
V
/T
−5.8
10.5
15.5
mV/°C
GS(TH)
J
V
= 10 V
13
19
GS
Drain−to−Source On Resistance
R
I
D
= 20 A
mW
DS(on)
V
GS
= 4.5 V
CHARGES AND CAPACITANCES
Input Capacitance
C
1680
580
42
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 25 V
pF
DS
Reverse Transfer Capacitance
V
GS
= 4.5 V, V = 50 V; I = 25 A
8
DS
D
Total Gate Charge
Q
G(TOT)
17
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
2.2
4.1
2.0
3.3
nC
V
G(TH)
Q
V
GS
= 10 V, V = 50 V; I = 25 A
DS D
GS
GD
GP
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
11
d(ON)
Rise Time
t
67.6
14.8
7.2
r
V
= 4.5 V, V = 50 V,
DS
GS
ns
V
I
D
= 25 A, R = 1.0 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
J
0.83
0.72
48
1.2
SD
RR
V
GS
= 0 V,
I
S
= 20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
25
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 25 A
Discharge Time
t
b
23
Reverse Recovery Charge
Q
53
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS6B14NL
TYPICAL CHARACTERISTICS
60
50
40
30
20
60
V
= 10 V
to 6 V
4.5 V
4.0 V
GS
V
DS
= 10 V
3.8 V
50
40
30
20
3.6 V
3.4 V
T = 25°C
3.2 V
3.0 V
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
26
30
25
20
15
24
22
20
18
16
14
12
10
T = 25°C
J
I
= 20 A
D
T = 25°C
J
V
= 4.5 V
= 10 V
GS
V
GS
10
5
8
6
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
2.0
100K
I
V
= 20 A
D
= 10 V
GS
T = 150°C
J
10K
1K
T = 125°C
J
1.8
1.6
1.4
1.2
1.0
0.8
T = 85°C
J
100
10
1
0.6
0.4
−50 −25
0
25
50
75
100 125 150 175
0
10 20
30 40 50 60
70 80 90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NVMFS6B14NL
TYPICAL CHARACTERISTICS
10,000
1000
100
10
9
C
iss
8
7
C
oss
6
C
rss
5
Q
gd
4
3
Q
gs
10
1
V
= 0 V
T = 25°C
DS
GS
J
V
2
1
0
T = 25°C
= 50 V
J
f = 1 MHz
I
D
= 25 A
2
0
10 20 30 40 50 60 70 80 90 100
0
4
6
8
10 12
14
16 18
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
1000
100
t
r
1
t
d(off)
10
1
T = 125°C T = 25°C
T = −55°C
J
J
J
t
d(on)
0.1
0.01
V
= 50 V
= 25 A
= 4.5 V
DS
t
f
I
D
V
GS
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
V
≤ 10 V
GS
Single Pulse
T
C
= 25°C
500 ms
10
1 ms
25°C
1
10 ms
R
Limit
0.1
DS(on)
100°C
Thermal Limit
Package Limit
1
0.01
0.0001
0.001
0.01
0.1
1
10
100
T , TIME IN AVALANCHE (sec)
AV
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. IPEAK vs. TAV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
NVMFS6B14NL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
2
0.1
NVMFS6B14NL, 650 mm , Cu Single Layer Pad
Single Pulse
0.01
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS6B14NLT1G
6B14NL
DFN5
(Pb−Free)
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
NVMFS6B14NLWFT1G
NVMFS6B14NLT3G
614LLW
6B14NL
614LLW
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
NVMFS6B14NLWFT3G
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMFS6B14NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
RECOMMENDED
SOLDERING FOOTPRINT*
SIDE VIEW
DETAIL A
2X
5. DRAIN
0.495
4.560
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
L
1
4
3.200
1.330
K
4.530
E2
2X
0.905
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
D2
BOTTOM VIEW
G
4X
1.000
4X
1.270
PITCH
0.750
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NVMFS6B14NL/D
相关型号：
©2020 ICPDF网 联系我们和版权申明