NVMFS6B25NLT3G [ONSEMI]
Power MOSFET;
| 型号： | NVMFS6B25NLT3G |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET |
| 文件： | 总6页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NVMFS6B25NL
Power MOSFET
100 V, 24 mW, 33 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
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G
• NVMFS6B25NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
24 mW @ 10 V
39 mW @ 4.5 V
100 V
33 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
16
Unit
V
D (5,6)
V
DSS
Gate−to−Source Voltage
Continuous Drain Cur-
V
GS
V
T
= 25°C
I
D
33
A
C
rent R
3)
(Notes 1, 2,
q
JC
G (4)
T
C
= 100°C
23
Steady
State
Power Dissipation
(Notes 1, 2)
T
C
= 25°C
P
D
62
31
8
W
A
R
q
JC
S (1,2,3)
N−CHANNEL MOSFET
T
C
= 100°C
Continuous Drain Cur-
T = 25°C
A
I
D
rent R
3)
(Notes 1, 2,
q
JA
T = 100°C
A
6
Steady
State
MARKING
DIAGRAM
Power Dissipation
(Notes 1 & 2)
T = 25°C
A
P
D
3.6
1.8
177
W
R
q
JA
T = 100°C
A
D
1
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
S
S
S
G
D
D
p
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
6B25xx
AYWZZ
Operating Junction and Storage Temperature
T , T
−55 to
+ 175
°C
J
stg
Source Current (Body Diode)
I
S
48
A
D
Single Pulse Drain−to−Source Avalanche
E
199
mJ
AS
6B25NL = NVMFS6B25NL
6B25LW = NVMFS6B25NLWF
Energy (I
= 2.0 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
A
Y
= Assembly Location
= Year
W
ZZ
= Work Week
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
Parameter
Symbol
Value
Unit
page 5 of this data sheet.
Junction−to−Case − Steady State
R
2.4
42
°C/W
q
q
JC
Junction−to−Ambient − Steady State (Note 2)
R
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
August, 2016 − Rev. 0
NVMFS6B25NL/D
NVMFS6B25NL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
64
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 80 V
T = 25°C
10
DSS
GS
DS
J
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 16 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
1.0
3.0
V
GS(TH)
DS
D
Threshold Temperature Coefficient
V
/T
−5.4
19.8
31
mV/°C
GS(TH)
J
V
= 10 V
24
39
GS
Drain−to−Source On Resistance
R
I
D
= 20 A
mW
DS(on)
V
GS
= 4.5 V
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
905
302
23
ISS
Output Capacitance
C
OSS
C
RSS
V
GS
= 0 V, f = 1 MHz, V = 25 V
pF
DS
Reverse Transfer Capacitance
V
= 4.5 V, V = 50 V; I = 25 A
6.4
13.5
1.8
3.6
1.8
3.7
GS
DS
D
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
V
= 10 V, V = 50 V; I = 25 A
DS D
GS
GD
GP
GS
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
9.6
79
d(ON)
Rise Time
t
r
V
GS
= 4.5 V, V = 50 V,
DS
ns
V
I
= 25 A, R = 1.0 W
D
G
Turn−Off Delay Time
t
18.3
73
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
T = 25°C
J
0.91
0.81
40.4
24.5
15.9
50
1.2
V
I
= 0 V,
GS
S
= 25 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
a
ns
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 20 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS6B25NL
TYPICAL CHARACTERISTICS
30
25
20
15
10
30
V
= 10 V
to 5 V
4.5 V
GS
V
DS
= 10 V
3.6 V
3.4 V
25
20
15
10
3.2 V
3.0 V
T = 25°C
J
5
0
5
0
2.8 V
2.6 V
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
38
36
34
32
30
28
26
24
22
20
T = 25°C
I
= 20 A
J
D
T = 25°C
V
= 4.5 V
= 10 V
35
J
GS
V
GS
15
10
18
16
3
4
5
6
7
8
9
10
5
10
15
20
25
30
40
45 50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
100K
I
V
= 20 A
D
T = 150°C
J
= 10 V
GS
10K
1K
T = 125°C
J
T = 85°C
J
100
10
1
0.8
0.6
−50 −25
0
25
50
75
100 125 150 175
5
15
25
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
35
45
55
65
75
85
95
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS6B25NL
TYPICAL CHARACTERISTICS
1000
100
10
9
C
iss
C
oss
8
7
C
rss
6
5
Q
gd
Q
gs
4
3
10
1
V
= 0 V
T = 25°C
DS
GS
J
V
2
1
0
T = 25°C
= 50 V
J
f = 1 MHz
I
D
= 25 A
2
0
10 20 30 40 50 60 70 80 90 100
0
4
6
8
10
12
14
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
1000
100
t
r
t
f
T = 25°C
J
t
d(off)
10
1
10
1
t
d(on)
V
= 50 V
= 25 A
= 4.5 V
DS
I
D
V
GS
T = 125°C
T = −55°C
J
J
1
10
R , GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
V
≤ 10 V
GS
Single Pulse
T
C
= 25°C
T
= 25°C
10
J(initial)
10 ms
1
T
T
= 100°C
J(initial)
R
Limit
500 ms
1 ms
10 ms
DS(on)
Thermal Limit
Package Limit
0.1
1
0.0001
0.001
, TIME IN AVALANCHE (sec)
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
AV
Figure 12. IPEAK vs. TAV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVMFS6B25NL
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1%
1
0.1
NVMFS6B25NL5x6 SOFL PCB Cu
Area 650 mm PCB Cu thk 2 oz
2
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS6B25NLT1G
6B25NL
DFN5
(Pb−Free)
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
NVMFS6B25NLWFT1G
NVMFS6B25NLT3G
6B25LW
6B25NL
6B25LW
DFN5
(Pb−Free, Wettable Flanks)
DFN5
(Pb−Free)
NVMFS6B25NLWFT3G
DFN5
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS6B25NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
2X
SIDE VIEW
DETAIL A
0.495
4.560
2X
5. DRAIN
1.530
8X b
A B
0.10
0.05
C
c
e/2
e
L
3.200
1.330
1
4
4.530
K
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
4X
1.000
0.750
D2
BOTTOM VIEW
G
1.270
PITCH
4X
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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For additional information, please contact your local
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NVMFS6B25NL/D
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