NVMFS9D6P04M8LT1G [ONSEMI]
MOSFET - Power, Single P-Channel;
| 型号： | NVMFS9D6P04M8LT1G |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET - Power, Single P-Channel |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Single
P-Channel
-40 V, 9.5 mW, -77 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
9.5 mW @ −10 V
−40 V
−77 A
13.8 mW @ −4.5 V
NVMFS9D6P04M8L
Features
P−Channel MOSFET
D (5−8)
• Small Footprint for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• NVMFWS9D6P04M8L − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
G (4)
S (1,2,3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
20
Unit
V
MARKING
DIAGRAM
V
DSS
Gate−to−Source Voltage
V
GS
V
1
1
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
−77.0
−54.4
75
A
XXXXXX
AYWZZ
C
DFN5 (SO−8FL)
STYLE 1
CASE 488AA
q
JC
T
C
(Notes 1, 2, 4)
Steady
State
Power Dissipation
T
C
P
D
W
A
R
(Notes 1, 2)
q
JC
XXXXXX = Specific Device Code
T
C
= 100°C
38
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Continuous Drain
Current R
T = 25°C
A
I
D
−17.1
−12.1
3.7
q
JA
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
D
W
R
(Notes 1, 3)
q
JA
T = 100°C
A
1.8
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
450
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
−62
A
Single Pulse Drain−to−Source Avalanche
E
AS
259
mJ
Energy (I
= −8.5 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Notes 1, 2, 4)
R
2
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 3)
R
40.7
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
June, 2022 − Rev. 0
NVMFS9D6P04M8L/D
NVMFS9D6P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
21
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
−1.0
mA
DSS
J
V
DS
= 0 V,
GS
V
= −40 V
T = 125°C
J
−1000
"100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
V
= V , I = −580 mA
−1.0
−2.4
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Co-
efficient
V
/T
−5.1
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
R
V
= −10 V, I = −20 A
7.15
10.4
36
9.5
mW
S
DS(on)
GS
GS
DS
D
V
V
= −4.5 V, I = −10 A
13.8
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
= −1.5 V, I = −15 A
D
C
2002
935
pF
iss
V
= 0 V, f = 1.0 MHz,
GS
Output Capacitance
C
oss
V
DS
= −20 V
Reverse Transfer Capacitance
Total Gate Charge
C
43
rss
Q
V
= −4.5 V
= −10 V
15.04
14.47
4.27
11.94
12.83
3.63
nC
nC
G(TOT)
GS
V
= −20 V,
DS
D
I
= −20 A
V
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
GS
GD
GP
V
= −10 V, V = −20 V,
DS
GS
I
= −20 A
D
Q
V
V
SWITCHING CHARACTERISTICS, V = −4.5 V (Note 6)
GS
Turn−On Delay Time
Rise Time
t
13.1
103
ns
d(on)
t
r
V
= −4.5 V, V = −20 V,
DS
GS
D
I
= −20 A, R = 2.5 W
G
Turn−Off Delay Time
Fall Time
t
83.3
63.0
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
S
= 0 V,
T = 25°C
−0.86
−0.74
54.6
34.9
19.7
97.9
−1.25
V
SD
GS
J
I
= −20 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −20 A
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS9D6P04M8L
TYPICAL CHARACTERISTICS
180
150
120
90
−6.5 V
V
= −7 V
GS
V
DS
= 10 V
−6.0 V
to −10 V
150
100
−5.5 V
−5.0 V
−4.6 V
−3.0 V
−4.0 V
60
T = 25°C
50
0
J
−3.6 V
−3.2 V
30
0
T = 125°C
J
T = −55°C
J
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
25
20
15
10
40
V
GS
= −4.5 V
T = 25°C
D
T = 25°C
J
J
I
= −20 A
32
24
16
V
GS
= −10 V
8
0
5
0
2
4
6
8
10
5
25
45
65
85 105 125 145 165 185
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
3.0
2.5
2.0
1.5
1.0
V
= −10 V
= −20 A
T = 175°C
GS
J
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
10
T = 25°C
J
0.5
0
1
0.1
5
10
20
25
30
35
40
15
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS9D6P04M8L
TYPICAL CHARACTERISTICS
10
10K
1K
V
DS
= −20 V
9
8
7
6
5
T = 25°C
J
C
ISS
I
D
= −20 A
C
OSS
Q
Q
GD
4
3
2
1
0
GS
100
10
C
RSS
V
= 0 V
GS
T = 25°C
J
f = 1 MHz
1
10
100
0
5
10
15
20
25
30
35
40
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
20
15
10
V
GS
= 0 V
t
d(off)
t
r
t
f
100
T = 125°C
J
t
d(on)
T = 25°C
J
10
1
T = 150°C
J
5
0
V
V
= −10 V
= −20 V
= −20 A
GS
DS
I
D
T = 175°C
J
T = −55°C
J
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
100
100
10
T (initial) = 25°C
J
T
V
= 25°C
C
≤ 10 V
T (initial) = 100°C
J
GS
0.5 ms
1 ms
10 ms
10
1
Single Pulse
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMFS9D6P04M8L
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS9D6P04M8LT1G
V9D6PL
DFNW5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS9D6P04M8L
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
q
−−−
12
A
_
_
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SIDE VIEW
DETAIL A
5. DRAIN
8X b
A B
0.10
0.05
C
c
e/2
e
RECOMMENDED
SOLDERING FOOTPRINT*
L
1
4
2X
0.495
4.560
K
2X
1.530
E2
PIN 5
(EXPOSED PAD)
M
2X
0.475
L1
3.200
1.330
4.530
D2
BOTTOM VIEW
G
2X
0.905
1
0.965
4X
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy and soldering
details, please download the onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
6
NVMFS9D6P04M8L
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
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For additional information, please contact your local Sales Representative
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◊
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