NVMFWS002N10MCLT1G [ONSEMI]

MOSFET - Power, Single, N-Channel 100 V, 2.8mΩ, 177A;


型号：	NVMFWS002N10MCLT1G
厂家：	ONSEMI
描述：	MOSFET - Power, Single, N-Channel 100 V, 2.8mΩ, 177A
文件：	总7页 (文件大小：132K)
中文：	中文翻译
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DATA SHEET

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MOSFET - Power, Single

N-Channel

100 V, 2.8 mW, 177 A

MAX

I MAX

(BR)DSS

DS(ON)

2.8 mW @ 10 V

3.8 mW @ 4.5 V

100 V

177 A

NVMFWS002N10MCL

D (5,6)

Features

• Small Footprint (5x6 mm) for Compact Design

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

G (4)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free

and are RoHS Compliant

S (1,2,3)

N−CHANNEL MOSFET

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

100

Unit

DSS

Gate−to−Source Voltage

DFNW5

(for WF version)

CASE 507BA

XXXXXX

AYWZZ

Continuous Drain

= 25°C

= 100°C

= 25°C

177

125

194

Current R

(Note 1)

Steady

State

Power Dissipation

(Note 1)

XXXXXX = Specific Device Code

= 100°C

= Assembly Location

= Year

= Work Week

= Lot Traceability

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2)

Steady

State

Power Dissipation

T = 25°C

3.8

1.9

900

(Notes 1, 2)

T = 100°C

ORDERING INFORMATION

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

Device

Package Shipping†

stg

+175

NVMFWS002N10MCLT1G

(Wettable Flanks)

DFN5

1500 /

Tape &

Reel

Source Current (Body Diode)

149

(Pb−Free)

Single Pulse Drain−to−Source Avalanche

1338

Energy (I

= 11.9 A)

L(pk)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Lead Temperature Soldering Reflow for Solder-

ing Purposes (1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

0.77

Unit

Junction−to−Case − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 1 in pad size, 2 oz. Cu pad.

Publication Order Number:

NVMFWS002N10MCL/D

October, 2021 − Rev. 0

NVMFWS002N10MCL

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

100

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/°C

(BR)DSS

= 250 mA, ref to 25°C

Zero Gate Voltage Drain Current

T = 25°C

DSS

= 0 V,

= 100 V

T = 125°C

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS

= 0 V, V = 20 V

GSS

Gate Threshold Voltage

= V , I = 351 mA

GS(TH)

Threshold Temperature Coefficient

Drain−to−Source On Resistance

I = 250 mA, ref to 25°C

−5.7

2.3

mV/°C

GS(TH)

= 10 V, I = 50 A

2.8

3.8

DS(on)

= 4.5 V, I = 50 A

3.0

Forward Transconductance

Gate−Resistance

= 10 V, I = 50 A

200

0.40

T = 25°C

CHARGES & CAPACITANCES

Input Capacitance

7200

2400

ISS

Output Capacitance

= 0 V, f = 1 MHz, V = 50 V

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

= 4.5 V, V = 50 V, I = 50 A

G(TOT)

Total Gate Charge

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Plateau Voltage

G(TH)

= 10 V, V = 50 V, I = 50 A

DS D

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

d(ON)

Rise Time

= 10 V, V = 50 V,

= 50 A, R = 6 W

Turn−Off Delay Time

250

105

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.83

0.71

1.3

= 0 V,

= 50 A

T = 125°C

Reverse Recovery Time

Reverse Recovery Charge

Charge Time

= 0 V, dI /dt = 100 A/ms,

= 31 A

Discharge Time

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Switching characteristics are independent of operating junction temperatures

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NVMFWS002N10MCL

TYPICAL CHARACTERISTICS

160

140

120

100

300

= 10 V

3.0 V

2.8 V

250

200

150

100

= 10 V to 3.2 V

T = 25°C

2.6 V

2.4 V

T = 150°C

T = −55°C

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

T = 25°C

= 50 A

= 4.5 V

= 10 V

45 50

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.5

2.0

1.5

1000

100

= 10 V

= 50 A

T = 175°C

T = 150°C

T = 125°C

T = 85°C

0.1

0.01

1.0

0.5

T = 25°C

0.001

0.0001

−50 −25

75 100 125 150 175

10 20

90 100

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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NVMFWS002N10MCL

TYPICAL CHARACTERISTICS

10000

1000

100

ISS

OSS

RSS

T = 25°C

= 0 V

= 50 A

T = 25°C

= 50 V

f = 1 MHz

20 30 40 50 60 70 80

Q , TOTAL GATE CHARGE (nC)

90 100

10 20 30 40

50 60 70 80

90 100

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source Voltage vs. Total

Charge

1000

100

= 10 V

= 50 V

= 50 A

d(off)

= 0 V

d(on)

T = 125°C

T = 25°C

T = −55°C

R , GATE RESISTANCE (W)

100

0.4

0.5

0.6

0.7

0.8

0.9

1.0

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

1000

100

= 25°C

J(initial)

= 125°C

J(initial)

= 25°C

10 ms

Single Pulse

≤ 10 V

0.5 ms

1 ms

Limit

DS(on)

10 ms

Thermal Limit

Package Limit

0.1

100

1000

0.0001

0.001

0.01

, DRAIN−TO−SOURCE VOLTAGE (V)

t , TIME IN AVALANCHE (s)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

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NVMFWS002N10MCL

TYPICAL CHARACTERISTICS

100

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

0.01

0.1

Single Pulse

0.01

0.000001

0.00001

0.0001

0.001

0.01

0.1

100

1000

t, PULSE TIME (sec)

Figure 13. Transient Thermal Impedance

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NVMFWS002N10MCL

PACKAGE DIMENSIONS

DFNW5 5x6 (FULL−CUT SO8FL WF)

CASE 507BA

ISSUE A

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NVMFWS002N10MCL

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