NVMFWS027N10MCLT1G [ONSEMI]
Single N-Channel Power MOSFET 100V, 28A, 26mΩ;型号: | NVMFWS027N10MCLT1G |
厂家: | ONSEMI |
描述: | Single N-Channel Power MOSFET 100V, 28A, 26mΩ |
文件: | 总8页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
100 V, 26 mW, 28 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
26 mW @ 10 V
35 mW @ 4.5 V
100 V
28 A
NVMFS027N10MCL
D (5,6)
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G (4)
G
• AEC−Q101 Qualified and PPAP Capable
• NVMFWS027N10MCL − Wettable Flank Products
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
100
20
Unit
V
D
S
S
S
G
D
D
1
V
DSS
XXXXXX
AYWZZ
DFN5
CASE 488AA
STYLE 1
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
28
A
C
D
D
q
JC
T
C
20
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
D
46
W
A
S
S
S
G
D
D
R
(Note 1)
q
JC
XXXXXX
AYWZZ
T
C
= 100°C
23
DFNW5
(for WF Version)
CASE 507BA
Continuous Drain
Current R
T = 25°C
A
I
D
7.9
5.6
3.5
1.8
137
q
JA
D
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
D
W
XXXXXX = Specific Device Code
R
(Notes 1, 2)
q
JA
A
Y
W
ZZ
= Assembly Location
= Year
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
= Work Week
= Lot Traceability
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
35
A
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Single Pulse Drain−to−Source Avalanche
E
AS
414
mJ
Energy (I
= 1.3 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.3
Unit
Junction−to−Case − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
42.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
September, 2021 − Rev. 1
NVMFS027N10MCL/D
NVMFS027N10MCL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
100
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
53
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25 °C
1.0
100
100
DSS
GS
J
V
= 100 V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
Gate Threshold Voltage
V
V
GS
= V , I = 38 mA
1
3
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−6
21
28
25
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 7 A
= 5 A
26
35
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
g
FS
V
= 10 V, I = 7 A
S
DS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
800
300
4
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 50 V
pF
GS
DS
Reverse Transfer Capacitance
Gate Resistance
R
0.41
5.5
11.5
1.3
2.1
1.2
2.5
87
W
G
Total Gate Charge
Q
Q
= 4.5 V, V = 50 V; I = 7 A
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
V
= 10 V, V = 50 V; I = 7 A
DS D
GS
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
Q
nC
GS
GD
GP
V
= 10 V, V = 50 V; I = 7 A
GS
DS
D
Q
V
V
Output Charge
Q
V
GS
= 0 V, V = 50 V
nC
OSS
DS
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
t
7.4
2
d(ON)
t
r
V
= 10 V, V = 50 V,
DS
GS
D
ns
V
I
= 7 A, R = 6.0 W
G
Turn−Off Delay Time
Fall Time
t
19
2.9
d(OFF)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V, I = 7 A, T = 25°C
0.84
0.73
28
1.3
SD
RR
GS
S
J
V
= 0 V, I = 7 A, T = 125°C
S J
GS
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
t
ns
nC
ns
ns
Q
17
RR
V
= 0 V, dI /dt = 100 A/ms, I = 3 A
S S
GS
t
a
13.9
14.2
Discharge Time
t
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
25
20
15
10
25
V
DS
= 10 V
V
GS
= 10 V to 3.2 V
3.0 V
2.8 V
20
15
10
2.6 V
2.4 V
T = 25°C
J
5
0
5
0
T = 150°C
T = −55°C
J
J
0
1
2
3
4
5
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
35
30
25
T = 25°C
D
T = 25°C
J
J
I
= 7 A
V
= 4.5 V
= 10 V
GS
V
GS
20
15
20
15
1
2
3
4
5
6
7
8
9
10
1
3
5
7
9
11
13
15
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
100
10
V
= 10 V
= 7 A
GS
I
D
T = 175°C
J
1
T = 150°C
J
T = 125°C
J
0.1
T = 85°C
J
0.01
0.001
1.0
0.5
T = 25°C
J
0.0001
0.00001
−50 −25
0
25
50
75 100 125 150 175
10
20
30
40
50
60
70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
C
ISS
7
6
5
4
3
2
C
OSS
100
Q
GD
Q
GS
10
1
V
I
= 50 V
= 7 A
V
= 0 V
DS
GS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
C
RSS
0
10 20 30 40 50
60 70 80 90 100
0
2
4
6
8
10
12
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
V
GS
= 0 V
t
d(off)
10
t
d(on)
t
f
V
V
= 10 V
= 50 V
= 7 A
GS
T = 125°C
J
DS
t
r
I
D
T = −55°C
T = 25°C
J
J
1
1
5
50
0.4
0.5
0.6
0.7
0.8
0.9
1.0
R , GATE RESISTANCE (W)
G
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
1
T
= 125°C
J(initial)
1
R
Limit
10 ms
DS(on)
Thermal Limit
Package Limit
0.5 ms
10 ms 1 ms
100
, DRAIN−SOURCE VOLTAGE (V)
0.1
0.1
0.1
1
10
1000
0.00001
0.0001
0.001
0.01
V
DS
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMFS027N10MCL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMFS027N10MCLT1G
027L10
DFN5
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVMFWS027N10MCLT1G
027W10
DFN5
(Wettable Flank, Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS027N10MCL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
2 X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
0.20
C
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
D
A
2
B
E
2 X
D1
MILLIMETERS
0.20
C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
MIN
0.90
0.00
0.33
0.23
5.00
4.70
3.80
6.00
5.70
3.45
NOM
1.00
−−−
0.41
0.28
5.15
4.90
4.00
6.15
MAX
1.10
0.05
0.51
0.33
5.30
5.10
4.20
6.30
6.10
3.85
4 X
q
E1
2
c
A1
5.90
3.65
1
2
3
4
1.27 BSC
0.575
1.35
0.575
0.125 REF
3.40
0.51
1.20
0.51
0.71
1.50
0.71
TOP VIEW
C
SEATING
DETAIL A
PLANE
0.10
0.10
C
C
3.00
0
3.80
12
q
−−−
A
_
_
STYLE 1:
RECOMMENDED
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
SOLDERING FOOTPRINT*
SIDE VIEW
2X
DETAIL A
0.495
4.560
5. DRAIN
2X
8X b
A B
1.530
0.10
0.05
C
c
e/2
e
2X
0.475
L
1
4
3.200
4.530
K
1.330
2X
0.905
E2
PIN 5
(EXPOSED PAD)
M
L1
1
0.965
4X
D2
BOTTOM VIEW
G
1.000
1.270
PITCH
DIMENSIONS: MILLIMETERS
4X
0.750
*For additional information on our Pb−Free strategy
and soldering details, please download the
onsemi Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
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6
NVMFS027N10MCL
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
q
q
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7
NVMFS027N10MCL
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
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