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NVMFWS1D3N04XMT1G [ONSEMI]

Single N-Channel Power MOSFET 40 V, 195A, 1.3 mΩ;
NVMFWS1D3N04XMT1G
型号： NVMFWS1D3N04XMT1G
厂家： ONSEMI    ONSEMI
描述：

Single N-Channel Power MOSFET 40 V, 195A, 1.3 mΩ
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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
N-Channel, STD Gate,  
SO8FL  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
40 V  
1.3 mꢂ @ V = 10 V  
195 A  
GS  
40 V, 1.3 mW, 195 A  
D (5)  
NVMFWS1D3N04XM  
G (4)  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Small Footprint (5 x 6 mm) with Compact Design  
• AECQ101 Qualified and PPAP Capable  
S (1,2,3)  
N−CHANNEL MOSFET  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
• Motor Drive  
• Battery Protection  
• Synchronous Rectification  
DFNW5 (SO−8FL)  
CASE 507BA  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
1D3N4W  
AYWZZ  
V
DSS  
Gate−to−Source Voltage  
DC  
V
20  
V
GS  
1D3N4W = Specific Device Code  
Continuous Drain Current  
T
= 25°C  
= 100°C  
= 25°C  
I
195  
138  
90  
A
C
D
A
Y
= Assembly Location  
= Year  
T
C
W
ZZ  
= Work Week  
= Assembly Lot Code  
Power Dissipation  
T
C
P
W
A
D
Continuous Drain Current  
R
T = 25°C  
I
40  
A
DA  
ꢀ
JA  
T = 100°C  
28  
A
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
Pulsed Drain Current  
T
= 25°C,  
I
900  
A
C
p
DM  
t = 10 ꢁ s  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
STG  
Source Current (Body Diode)  
Single Pulse Avalanche Energy  
I
74.5  
306  
A
S
E
AS  
mJ  
(I = 11.1 A)  
PK  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2022  
1
Publication Order Number:  
NVMFWS1D3N04XM/D  
April, 2023 − Rev. 1  
NVMFWS1D3N04XM  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
1.67  
Unit  
Thermal Resistance, Junction−to−Case (Note 2)  
R
°C/W  
ꢀ
JC  
Thermal Resistance, Junction−to−Ambient (Notes 1, 2)  
R
40.1  
ꢀ
JA  
2
1. Surface mounted on FR4 board using 650 mm , 2 oz Cu pad.  
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular  
conditions noted.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
OFF CHARACTERISTICS  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 1 mA, T = 25°C  
40  
V
(BR)DSS  
D
J
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
ꢃ
V
/
I
D
= 1 mA, Referenced to 25°C  
15  
mV/°C  
(BR)DSS  
ꢃ T  
J
Zero Gate Voltage Drain Current  
I
V
DS  
= 40 V, T = 25°C  
10  
ꢁ
A
DSS  
J
V
= 40 V, T = 125°C  
100  
100  
DS  
J
Gate−to−Source Leakage Current  
ON CHARACTERISTICS  
I
V
= 20 V, V = 0 V  
nA  
GSS  
GS  
DS  
Drain−to−Source On Resistance  
Gate Threshold Voltage  
R
V
= 10 V, I = 20 A, T = 25°C  
1.17  
1.3  
3.5  
mꢂ  
DS(on)  
GS  
D
J
V
V
GS  
= V , I = 100 ꢁ A, T = 25°C  
2.5  
V
GS(TH)  
DS  
D
J
Gate Threshold Voltage Temperature  
Coefficient  
ꢃ
V
/
V
GS  
= V , I = 100 ꢁ A  
−7.23  
mV/°C  
GS(TH)  
DS  
D
ꢃ T  
J
Forward Trans−conductance  
g
FS  
V
DS  
= 5 V, I = 20 A  
105  
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
C
V
= 0 V, V = 25 V, f = 1 MHz  
2459  
1578  
23.3  
38.6  
7.2  
pF  
nC  
ISS  
GS  
DS  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
C
OSS  
C
RSS  
Q
V
= 10 V, V = 32 V; I = 50 A  
G(TOT)  
GS DD D  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Gate Resistance  
Q
G(TH)  
Q
11.3  
7.4  
GS  
GD  
Q
R
f = 1 MHz  
0.72  
ꢂ
G
SWITCHING CHARACTERISTICS  
Turn−On Delay Time  
Rise Time  
t
Resistive Load,  
19.1  
6.2  
ns  
d(ON)  
V
GS  
I
= 0/10 V, V = 32 V,  
D
DD  
t
r
= 50 A, R = 0 ꢂ  
G
Turn−Off Delay Time  
Fall Time  
t
30.4  
5.2  
d(OFF)  
t
f
SOURCE−TO−DRAIN DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
V
= 0 V, I = 20 A, T = 25°C  
0.8  
0.65  
82  
V
SD  
GS  
S
J
V
GS  
= 0 V, I = 20 A, T = 125°C  
S J  
Reverse Recovery Time  
Charge Time  
t
V
GS  
= 0 V, I = 50 A,  
ns  
RR  
S
dI/dt = 100 A/ꢁ s, V = 32 V  
DD  
t
t
47  
a
Discharge Time  
35  
b
Reverse Recovery Charge  
Q
241  
nC  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
2
 
NVMFWS1D3N04XM  
TYPICAL CHARACTERISTICS  
400  
350  
300  
250  
200  
150  
100  
50  
400  
VGS=4.5V  
VGS=5V  
VGS=5.5V  
VGS=6V  
VGS=7V  
VGS=8V  
VGS=9V  
VGS=10V  
T
VDS=5V  
J=25°C  
350  
300  
250  
200  
150  
100  
50  
T
J=−55°C  
T
J=25°C  
T
J=175°C  
0
0
0
0.5  
1
1.5  
2
2.5  
3
2
3
4
5
6
7
VDS, Drain to Source Voltage (V)  
VGS, Gate to Source Voltage (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
18  
16  
14  
12  
10  
8
2
1.5  
1
T
J=25°C  
T
J=25°C  
ID=20A  
T
J=175°C  
6
0.5  
0
4
2
VGS=10V  
100 120 140 160 180 200  
ID, Drain Current (A)  
0
4
5
6
7
8
9
10  
20  
40  
60  
80  
VGS , Gate to Source Voltage (V)  
Figure 3. On−Resistance vs. VGS  
Figure 4. On−Resistance vs. Drain Current and  
Gate Voltage  
2
1.8  
1.6  
1.4  
1.2  
1
100000  
ID=20A  
VGS=10V  
10000  
1000  
100  
10  
TJ=25C  
TJ=85C  
TJ= 125C  
TJ= 150C  
TJ= 175C  
1
0.8  
0.1  
0.6  
−75 −50 −25  
0
25  
50  
75 100 125 150 175  
5
10  
15  
20  
25  
30  
35  
40  
T
VDS, Drain to Source Voltage (V)  
J, Junction Temperature (°C)  
Figure 5. On−Resistance Variation with  
Figure 6. Drain−to−Source Leakage Current  
Temperature  
vs. Voltage  
www.onsemi.com  
3
NVMFWS1D3N04XM  
TYPICAL CHARACTERISTICS  
10000  
1000  
100  
10  
ID=50A  
8
6
4
2
0
VGS=0V  
T
J=25°C  
f=1MHz  
C
V
DD=8V  
V =24V  
DD  
ISS  
OSS  
RSS  
C
C
VDD=32V  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
VDS, Drain to Source Voltage (V)  
QG, Gate Charge (nC)  
Figure 7. Capacitance Characteristics  
Figure 8. Gate−to−Source Voltage vs. Total  
Charge  
1e−06  
1e−07  
1e−08  
1e−09  
1000  
100  
10  
VGS=10V  
VDS=32V  
ID=50A  
VGS=0V  
1
td(on)  
td(off)  
tr  
0.1  
0.01  
T
J=175°C  
T
J=25°C  
t
T
J=−55°C  
f
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
R
VSD, Body Diode Forward Voltage (V)  
G, Gate Resistance (ꢂ )  
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
1000  
100  
10  
100  
TC=25°C  
T Initial  
=25°C  
J
Single Pulse  
=150°C  
TJ Initial  
Limited by RDS(ON)  
@T  
J=175°C  
10  
1
pulseDuration=0.5ms  
pulseDuration=1ms  
pulseDuration=10ms  
1
0.1  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
VDS, Drain to Source Voltage (V)  
tAV ,Time in Avalanche (sec)  
Figure 11. Safe Operating Area (SOA)  
Figure 12. Avalanche Current vs Pulse Time  
(UIS)  
www.onsemi.com  
4
NVMFWS1D3N04XM  
TYPICAL CHARACTERISTICS  
100  
10  
1
D=0 is Single Pulse  
Z
Notes:  
P
DM  
T
=PDMxZθJA(t)+T  
JM  
A
t
1
Duty Cycle,D=t1/t2  
t
2
@50% Duty Cycle  
@10% Duty Cycle  
@2% Duty Cycle  
Single Pulse  
@20% Duty Cycle  
@5% Duty Cycle  
@1% Duty Cycle  
0.1  
0.01  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t, Rectangular Pulse Duration (sec)  
Figure 13. Transient Thermal Response  
ORDERING INFORMATION  
Device  
†
Marking  
Package  
Shipping  
NVMFWS1D3N04XMT1G  
1D3N4W  
DFN5  
(Pb−Free)  
1500 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
5
NVMFWS1D3N04XM  
PACKAGE DIMENSIONS  
DFNW5 5x6 (FULL−CUT SO8FL WF)  
CASE 507BA  
ISSUE A  
ꢀ
ꢀ
www.onsemi.com  
6
NVMFWS1D3N04XM  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products  
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information  
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license  
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems  
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should  
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
Email Requests to: orderlit@onsemi.com  
TECHNICAL SUPPORT  
North American Technical Support:  
Voice Mail: 1 800−282−9855 Toll Free USA/Canada  
Phone: 011 421 33 790 2910  
Europe, Middle East and Africa Technical Support:  
Phone: 00421 33 790 2910  
For additional information, please contact your local Sales Representative  
onsemi Website: www.onsemi.com  
◊
www.onsemi.com  

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