NVMJD012N06CLTWG [ONSEMI]
Dual N−Channel Power MOSFET 60V, 42A, 11.9mΩ;
| 型号： | NVMJD012N06CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | Dual N−Channel Power MOSFET 60V, 42A, 11.9mΩ |
| 文件： | 总6页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET - Power, Dual
N-Channel
60 V, 11.9 mW, 42 A
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
11.9 mꢂ @ 10 V
16.8 mꢂ @ 4.5 V
60 V
42 A
NVMJD012N06CL
Features
• Small Footprint (5x6 mm) for Compact Design
Dual N−Channel
D1
D2
• Low R
to Minimize Conduction Losses
• Low Q and Capacitance to Minimize Driver Losses
DS(on)
G
G1
G2
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
S1
S2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
MARKING
DIAGRAM
V
DSS
D1 D1 D2 D2
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
42
A
C
D
012N06
CL
AWLYW
ꢀ
JC
T
C
30
(Notes 1, 2, 3)
Steady
State
LFPAK8
CASE 760AF
Power Dissipation
T
C
P
42
W
A
D
R
(Notes 1, 2)
ꢀ
JC
T
C
= 100°C
21
1
S1 G1 S2 G2
Continuous Drain
Current R
T = 25°C
A
I
D
11.5
8.0
3.2
1.6
153
012N06CL = Specific Device Code
ꢀ
JA
A
WL
Y
= Assembly Location
= Wafer Lot
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
= Year
R
(Notes 1, 2)
ꢀ
JA
W
= Work Week
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ꢁ s
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
ORDERING INFORMATION
+175
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Source Current (Body Diode)
I
S
35.2
105
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (T = 25°C, I
= 2 A)
J
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
3.55
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
ꢀ
JC
R
47.5
ꢀ
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
August, 2022 − Rev. 1
NVMJD012N06CL/D
NVMJD012N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 ꢁ A
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
28
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 60 V
ꢁ
A
T = 125°C
J
100
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 30 ꢁ A
1.2
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.9
9.4
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 25 A
= 25 A
11.9
16.8
DS(on)
GS
D
mꢂ
V
GS
= 4.5 V
13.5
45.5
D
Forward Transconductance
CHARGES, CAPACITANCES
Input Capacitance
g
FS
V
= 5 V, I = 25 A
S
DS
D
C
792
438
8
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 25 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= 10 V, V = 48 V; I = 25 A
11.5
0.7
2.3
1.5
3.0
G(TOT)
GS
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
GS
GD
GP
V
= 48 V; I = 25 A
D
DS
Q
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
10
7
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 48 V,
DS
GS
D
ns
V
I
= 25 A, R = 6 ꢂ
G
Turn−Off Delay Time
t
13
5
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.9
0.8
28
1.2
SD
J
V
S
= 0 V,
GS
I
= 25 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
12.5
15.2
12
ns
a
V
= 0 V, dIS/dt = 100 A/ꢁ s,
GS
I
S
= 25 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ꢁ s, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMJD012N06CL
TYPICAL CHARACTERISTICS
40
36
32
28
24
20
16
12
8
50
3.6 V
45
40
35
30
25
20
15
10
V
DS
= 5 V
V
GS
= 10 V − 4 V
3.2 V
2.8 V
T = 25°C
J
4
0
T = 175°C
5
0
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, GATE−TO−SOURCE VOLTAGE (V)
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
DS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
15
50
40
30
20
I
= 25 A
D
T = 25°C
J
T = 25°C
J
V
= 4.5 V
= 10 V
GS
10
V
GS
5
0
10
0
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10K
1K
100
10
I
V
= 25 A
D
= 10 V
GS
T = 175°C
J
T = 150°C
J
T = 125°C
J
1
T = 85°C
J
0.1
T = 25°C
J
0.01
0.2
0
−50 −25
0.001
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMJD012N06CL
TYPICAL CHARACTERISTICS
1000
100
10
C
Q
total
iss
9
8
7
6
5
4
3
C
oss
Q
Q
gd
gs
10
1
C
T = 25°C
GS
f = 1 MHz
rss
J
V
V
= 48 V
DS
2
1
0
= 0 V
I = 25 A
D
T = 25°C
J
0
5
10 15 20 25 30 35 40 45 50 55
, DRAIN−TO−SOURCE VOLTAGE (V)
0
2
4
6
8
10
12
V
DS
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
50
1000
100
V
GS
= 0 V
T = 175°C
J
T = 150°C
J
T = 125°C
J
t
d(off)
5
10
1
t
d(on)
t
f
V
V
I
= 4.5 V
= 48 V
= 25 A
GS
T = 25°C
J
DS
t
T = −55°C
J
D
r
0.1
0.5
0.3
1
10
R , GATE RESISTANCE (ꢂ)
100
0.4 0.5
0.6 0.7
0.8 0.9 1.0 1.1 1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
100
10
T
= 25°C
J(initial)
10
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
1
T
= 150°C
J(initial)
10 ꢁ s
0.5 ms
1 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVMJD012N06CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVMJD012N06CLTWG
012N06CL
LFPAK8 Dual
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMJD012N06CL
PACKAGE DIMENSIONS
LFPAK8 5.15x6.15
CASE 760AF
ISSUE O
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, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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◊
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