NVMJD7D4N04CLTWG [ONSEMI]

Dual N−Channel Power MOSFET 40V, 52A, 7.4mΩ;


型号：	NVMJD7D4N04CLTWG
厂家：	ONSEMI
描述：	Dual N−Channel Power MOSFET 40V, 52A, 7.4mΩ
文件：	总6页 (文件大小：248K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

MOSFET - Power, Dual

N-Channel

40 V, 7.6 mW, 51 A

MAX

I MAX

(BR)DSS

DS(ON)

7.6 mꢂ @ 10 V

40 V

51 A

12.6 mꢂ @ 4.5 V

NVMJD7D4N04CL

Features

• Small Footprint (5x6 mm) for Compact Design

Dual N−Channel

• Low R

to Minimize Conduction Losses

• Low Q and Capacitance to Minimize Driver Losses

DS(on)

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

MARKING

DIAGRAM

D1 D1 D2 D2

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

7D4N04

AWLYW

ꢀ

(Notes 1, 2, 3)

Steady

State

LFPAK8

CASE 760AF

Power Dissipation

37.5

(Notes 1, 2)

ꢀ

= 100°C

S1 G1 S2 G2

Continuous Drain

Current R

T = 25°C

7D4N04CL = Specific Device Code

ꢀ

T = 100°C

(Notes 1, 2, 3)

= Assembly Location

= Wafer Lot

Steady

State

Power Dissipation

T = 25°C

3.2

1.6

197

= Year

(Notes 1, 2)

ꢀ

T = 100°C

= Work Week

Pulsed Drain Current

T = 25°C, t = 10 ꢁ s

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

+175

Source Current (Body Diode)

31.3

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, I

= 2.9 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

ꢀ

47.3

ꢀ

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2022 − Rev. 1

NVMJD7D4N04CL/D

NVMJD7D4N04CL

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 ꢁ A

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

T = 25 °C

ꢁ

DSS

= 40 V

T = 125°C

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

= 0 V, V = 20 V

GSS

= V , I = 30 ꢁ A

1.2

2.2

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

−6.4

6.5

mV/°C

GS(TH)

= 10 V

= 13 A

7.6

mꢂ

DS(on)

= 4.5 V

12.6

Forward Transconductance

= 5 V, I = 15 A

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

871

312

ISS

Output Capacitance

OSS

RSS

= 0 V, f = 1 MHz, V = 25 V

Reverse Transfer Capacitance

Total Gate Charge

= 10 V, V = 32 V; I = 25 A

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Plateau Voltage

1.4

2.7

2.6

3.4

G(TH)

= 10 V, V = 32 V; I = 25 A

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

7.2

2.1

d(ON)

Rise Time

= 10 V, V = 32 V,

= 25 A, R = 1.0 ꢂ

Turn−Off Delay Time

17.6

2.4

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.84

0.71

1.2

= 0 V,

= 13 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dIS/dt = 100 A/ꢁ s,

= 25 A

Discharge Time

Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ꢁ s, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

www.onsemi.com

NVMJD7D4N04CL

TYPICAL CHARACTERISTICS

= 10 to 5 V

= 5 V

4.0 V

3.6 V

4.5 V

3.2 V

2.8 V

T = 25°C

T = 125°C

T = −55°C

0.5

1.0

1.5

2.0

2.5

3.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

= 13 A

T = 25°C

= 4.5 V

= 10 V

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

100K

10K

T = 175°C

= 13 A

= 10 V

T = 150°C

T = 125°C

100

T = 85°C

T = 25°C

0.7

0.6

0.5

0.1

−50 −25

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

www.onsemi.com

NVMJD7D4N04CL

TYPICAL CHARACTERISTICS

10K

iss

oss

100

rss

T = 25°C

f = 1 MHz

= 32 V

= 0 V

= 25 A

T = 25°C

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

1000

100

= 0 V

= 10 V

= 32 V

= 25 A

T = 175°C

T = 150°C

T = 125°C

d(off)

d(on)

T = 25°C

T = −55°C

0.5

R , GATE RESISTANCE (ꢂ)

100

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

100

= 25°C

≤ 10 V

= 25°C

Single Pulse

J(initial)

= 100°C

J(initial)

0.5 ms

1 ms

10 ms

Limit

DS(on)

Thermal Limit

Package Limit

0.1

100

0.0001

0.001

t , TIME IN AVALANCHE (s)

0.01

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

www.onsemi.com

NVMJD7D4N04CL

TYPICAL CHARACTERISTICS

100

50% Duty Cycle

20%

10%

0.1

Single Pulse

0.01

0.000001 0.00001

0.0001

0.001

0.01

0.1

100

1000

PULSE TIME (sec)

Figure 13. Thermal Response

DEVICE ORDERING INFORMATION

Device

†

Marking

Package

Shipping

NVMJD7D4N04CLTWG

7D4N04CL

LFPAK8 Dual

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

www.onsemi.com

NVMJD7D4N04CL

PACKAGE DIMENSIONS

LFPAK8 5.15x6.15

CASE 760AF

ISSUE O

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Email Requests to: orderlit@onsemi.com

TECHNICAL SUPPORT

North American Technical Support:

Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

For additional information, please contact your local Sales Representative

onsemi Website: www.onsemi.com

◊

www.onsemi.com

NVMJD7D4N04CLTWG [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E