NVMTS0D7N04CTXG [ONSEMI]

Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A;


型号：	NVMTS0D7N04CTXG
厂家：	ONSEMI
描述：	Power MOSFET, Single N-Channel, 40 V, 0.67 mOhms, 420 A
文件：	总7页 (文件大小：356K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MOSFET – Power, Single

N-Channel

40 V, 0.67 mW, 420 A

NVMTS0D7N04C

Features

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• Small Footprint (8x8 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

MAX

I MAX

• Power 88 Package, Industry Standard

(BR)DSS

DS(ON)

• AEC−Q101 Qualified and PPAP Capable

• Wettable Flank Plated Option for Enhanced Optical Inspection

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

40 V

0.67 mW @ 10 V

420 A

D (5−8)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

G (1)

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

420

297

205

103

S (2−4)

N−CHANNEL MOSFET

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

4.9

2.5

900

DFNW8

TX SUFFIX

CASE 507AP

(Notes 1, 2)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+ 175

°C

stg

MARKING DIAGRAM

Source Current (Body Diode)

171

Single Pulse Drain−to−Source Avalanche

1446

Energy (I

= 40 A)

L(pk)

XXXXXXXX

AWLYWW

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

XXX = Device Code

(8 A−N characters max)

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

0.73

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

30.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

August, 2020 − Rev. 4

NVMTS0D7N04C/D

NVMTS0D7N04C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

(BR)DSS

mV/°C

Zero Gate Voltage Drain Current

= 0 V,

T = 25 °C

DSS

= 40 V

T = 125°C

250

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

= 0 V, V = 20 V

GSS

= V , I = 250 mA

2.0

4.0

mV/°C

GS(TH)

Threshold Temperature Coefficient

Drain−to−Source On Resistance

Forward Transconductance

−8.5

0.57

200

GS(TH)

= 10 V

I = 50 A

0.67

DS(on)

V =5 V, I = 50 A

DS D

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

9281

5387

176

ISS

Output Capacitance

OSS

RSS

= 0 V, f = 1 MHz, V = 25 V

Reverse Transfer Capacitance

Total Gate Charge

= 10 V, V = 20 V; I = 50 A

140

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Plateau Voltage

22.7

G(TH)

= 10 V, V = 20 V; I = 50 A

28.3

4.28

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

28.9

18.1

61.0

20.4

d(ON)

Rise Time

= 10 V, V = 20 V,

= 50 A, R = 2.5 W

Turn−Off Delay Time

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.8

0.7

1.2

= 0 V,

= 50 A

T = 125°C

Reverse Recovery Time

Charge Time

88.9

57.9

= 0 V, dIS/dt = 100 A/ms,

= 50 A

Discharge Time

Reverse Recovery Charge

191

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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NVMTS0D7N04C

TYPICAL CHARACTERISTICS

1000

900

800

700

600

500

400

300

200

7 V to 10 V

900

800

700

600

500

400

300

200

= 3 V

6 V

T = 25°C

5 V

4 V

T = 125°C

100

T = −55°C

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

1.0

0.9

0.8

0.7

0.6

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

T = 25°C

= 50 A

= 10 V

0.5

0.4

0.3

0.2

0.4

0.2

30 40

50 60 70 80 90 100

, GATE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.E−03

1.E−04

1.E−05

1.E−06

1.E−07

T = 175°C

= 10 V

= 50 A

T = 150°C

T = 125°C

T = 85°C

1.1

1.0

0.9

0.8

0.7

T = 25°C

1.E−08

1.E−09

−50 −25

75 100 125 150 175

, REVERSE VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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NVMTS0D7N04C

TYPICAL CHARACTERISTICS

100K

10K

ISS

OSS

RSS

100

= 0 V

= 20 V

f = 1 MHz

I = 50 A

0.1

100

120

140

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Gate

Charge

1000

100

d(off)

= 0 V

d(on)

0.1

T = 150°C

0.01

T = 25°C

T = −55°C

0.001

100

0.2

0.4

0.6

0.8

1.0

1.2

R , GATE RESISTANCE (W)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

100

1000

100

10 ms

= 25°C

J(initial)

0.5 ms

1 ms

10 ms

= 25°C

= 100°C

J(initial)

Single Pulse

≤ 10 V

Limit

DS(on)

Thermal Limit

Package Limit

0.1

0.00001

0.0001

0.001

0.01

100

TIME IN AVALANCHE (s)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. I_PEAKvs. Time in Avalanche

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NVMTS0D7N04C

100

50% Duty Cycle

20%

10%

0.1

0.01

Single Pulse

0.001

1E−06

1E−05

1E−04

1E−03

1E−02

1E−01

1E+00

1E+01

1E+02

1E+03

PULSE TIME (sec)

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

Device

†

Marking

Package

POWER 88

Shipping

NVMTS0D7N04CTXG

0D7N04C

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TDFNW8 8.3x8.4, 2.0P, SINGLE COOL

CASE 507AP

ISSUE D

DATE 29 MAR 2021

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

= Assembly Location

WL = Wafer Lot Code

= Year Code

WW = Work Week Code

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON80534G

TDFNW8 8.3x8.4, 2.0P, SINGLE COOL

PAGE 1 OF 1

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NVMTS0D7N04CTXG [ONSEMI]

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