NVMTS1D1N04CTXG [ONSEMI]
Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel;
| 型号： | NVMTS1D1N04CTXG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET 40V, 1.1 mΩ, 277 A, Single N−Channel |
| 文件： | 总8页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
40 V, 1.1 mW, 277 A
NVMTS1D1N04C
Features
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• Small Footprint (8x8 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• New Power 88 Package
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
40 V
1.1 mW @ 10 V
277 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
D (5−8)
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
Gate−to−Source Voltage
V
20
V
GS
G (1)
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
277
196
153
76.5
48.8
34.5
4.7
A
C
D
q
JC
T
C
(Notes 1, 3)
Steady
State
S (2−4)
N−CHANNEL MOSFET
Power Dissipation
T
C
P
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
T = 25°C
A
I
D
MARKING
DIAGRAM
q
JA
T = 100°C
A
(Notes 1, 2, 3)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
R
(Notes 1, 2)
q
JA
T = 100°C
A
2.4
XXXXXXXX
XXXXXXXX
AWLYWW
DFNW8
CASE 507AP
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
900
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
128
721
A
S
XXXX = Specific Device Code
= Assembly Location
WL = Wafer Lot Code
= Year Code
A
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 22 A)
L(pk)
Y
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
WW = Work Week Code
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
0.98
Unit
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
31.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
October, 2020 − Rev. 0
NVMTS1D1N04C/D
NVMTS1D1N04C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
21
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25 °C
10
DSS
GS
DS
J
V
= 40 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V
=
GS
20 V
nA
GSS
DS
V
V
= V , I = 210 mA
2.0
2.8
−7.4
0.87
136
4.0
1.1
V
mV/°C
mW
S
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
/T
GS(TH) J
R
V
GS
= 10 V
I = 50 A
D
DS(on)
g
FS
V
= 5 V, I = 50 A
DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
5410
3145
82
ISS
Output Capacitance
C
OSS
C
RSS
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
86
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
10
G(TH)
nC
V
Q
24
= 10 V, V = 20 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
24
4.8
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
23
27
60
32
d(ON)
Rise Time
t
r
V
= 10 V, V = 20 V,
DS
GS
D
ns
V
I
= 50 A, R = 6 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.79
0.65
81
1.2
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
43
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 50 A
Discharge Time
t
38
b
Reverse Recovery Charge
Q
100
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
†
Device
Marking
Package
Shipping
NVMTS1D1N04CTXG
1D1N04C
POWER 88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVMTS1D1N04C
TYPICAL CHARACTERISTICS
600
500
400
300
200
600
V
GS
= 10 V to 8 V
V
DS
= 5 V
T = 25°C
J
500
7.0 V
400
300
200
6.0 V
5.0 V
100
0
100
0
T = 175°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3
4
5
6
7
8
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
2.0
1.6
1.2
0.8
I
D
= 50 A
T = 25°C
J
T = 25°C
J
6
V
GS
= 10 V
T = 175°C
J
4
0.4
0
2
0
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.0
1000
100
10
V
= 10 V
= 50 A
GS
1.8
1.6
1.4
I
D
T = 175°C
J
T = 150°C
J
T = 125°C
J
1.2
1.0
T = 85°C
J
1
0.8
0.6
0.1
−75 −50 −25
0
25 50 75 100 125 150 175 200
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVMTS1D1N04C
TYPICAL CHARACTERISTICS
10,000
10
C
ISS
Q
G(TOT)
9
8
7
C
OSS
1000
100
10
6
5
4
3
Q
Q
GD
GS
C
RSS
V
= 20 V
DS
2
V
= 0 V
T = 25°C
GS
J
1
0
f = 1 MHz
I
D
= 50 A
0
10
20
30
40
0
25
50
75
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
300
100
1000
100
10
V
= 0 V
t
t
GS
d(off)
t
f
10
1
t
r
d(on)
0.1
T = 175°C
J
V
V
= 10 V
= 20 V
GS
0.01
DS
= 50 A
I
D
T = 25°C
T = −55°C
J
J
0.001
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE−TO−DRAIN VOLTAGE (V)
G
SD
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
400
100
10 ms
T
= 25°C
J(initial)
T
C
= 25°C
Single Pulse
≤ 10 V
V
GS
10
1
T
= 150°C
J(initial)
10
1
R
Limit
DS(on)
0.5 ms
1 ms
Thermal Limit
Package Limit
10 ms
0.1
1
10
100
0.001 0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVMTS1D1N04C
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10 0.2
0.1
0.05
0.02
0.01
1
0.1
0.01
0.001
Single Pulse
0.0001
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Characteristics
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5
NVMTS1D1N04C
PACKAGE DIMENSIONS
DFNW8 8.3x8.4, 2P
CASE 507AP
ISSUE C
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6
NVMTS1D1N04C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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