NVMYS7D0N06CTWG [ONSEMI]

Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel;


型号：	NVMYS7D0N06CTWG
厂家：	ONSEMI
描述：	Power MOSFET 60 V, 1.68 mOhms, 224 A, Single N-Channel
文件：	总6页 (文件大小：209K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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MOSFET - Power, Single

N-Channel

60 V, 7.0 mW, 66 A

MAX

I MAX

(BR)DSS

DS(ON)

60 V

7.0 mW @ 10 V

66 A

D (5)

NVMYS7D0N06C

Features

• Small Footprint (5x6 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

S (1,2,3)

N−CHANNEL MOSFET

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

7D0N06

AWLYW

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

46.8

61.3

30.7

16.9

11.9

4.0

LFPAK4

CASE 760AB

(Notes 1, 3)

Steady

State

Power Dissipation

(Note 1)

= 100°C

7D0N06C

= Specific Device Code

= Assembly Location

=Wafer Lot

Continuous Drain

Current R

T = 25°C

T = 100°C

= Year

= Work Week

(Notes 1, 2, 3)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 2)

T = 100°C

2.0

Pulsed Drain Current

T = 25°C, t = 10 ms

366

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

51.1

195

Single Pulse Drain−to−Source Avalanche

Energy (I

= 3.6 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

2.45

Unit

Junction−to−Case − Steady State

Junction−to−Ambient − Steady State (Note 2)

°C/W

37.6

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

Publication Order Number:

October, 2021 − Rev. 0

NVMYS7D0N06C/D

NVMYS7D0N06C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min

Typ

Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

25.4

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

T = 25 °C

DSS

= 60 V

T = 125°C

250

100

Gate−to−Source Leakage Current

ON CHARACTERISTICS

= 0 V, V = 20 V

GSS

Gate Threshold Voltage

= V , I = 53 mA

2.0

4.0

7.0

GS(TH)

Threshold Temperature Coefficient

Drain−to−Source On Resistance

−8.4

mV/°C

GS(TH)

= 10 V

I = 11 A

5.8

DS(on)

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

1035

713

ISS

Output Capacitance

= 0 V, f = 1 MHz, V = 25 V

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

= 10 V, V = 48 V; I = 11 A

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Plateau Voltage

3.0

4.4

1.9

4.4

G(TH)

= 10 V, V = 48 V; I = 11 A

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

d(ON)

Rise Time

= 10 V, V = 48 V,

= 11 A, R = 2.5 W

Turn−Off Delay Time

d(OFF)

Fall Time

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.81

0.67

1.2

= 0 V,

= 11 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dI /dt = 100 A/ms,

= 11 A

Discharge Time

Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Switching characteristics are independent of operating junction temperatures.

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NVMYS7D0N06C

TYPICAL CHARACTERISTICS

150

= 10 V to 6 V

= 5 V

120

5.0 V

T = 25°C

4.5 V

4.0 V

T = 125°C

T = −55°C

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

T = 25°C

= 11 A

= 10 V

I , DRAIN CURRENT (A)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Resistance vs. Gate−to−Source

Figure 4. On−Resistance vs. Drain Current and

Voltage

Gate Voltage

2.0

1.8

1.6

1.4

1.2

1.0

1E−04

1E−05

1E−06

1E−07

1E−08

T = 175°C

= 10 V

= 11 A

T = 150°C

T = 125°C

T = 100°C

T = 85°C

T = 25°C

1E−09

1E−10

0.8

0.6

−75 −50 −25

25 50 75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

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NVMYS7D0N06C

TYPICAL CHARACTERISTICS

10,000

1000

100

ISS

OSS

= 48 V

RSS

= 0 V

T = 25°C

= 11 A

f = 1 MHz

0.1

, DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

1000

100

= 0 V

= 10 V

= 48 V

= 11 A

d(off)

0.1

d(on)

0.01

T = 125°C T = 25°C

T = −55°C

0.001

R , GATE RESISTANCE (W)

0.2

0.4

0.6

0.8

1.0

1.2

, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

1000

100

= 25°C

J(initial)

= 25°C

= 150°C

J(initial)

10 ms

Single Pulse

≤ 10 V

0.5 ms

1 ms

10 ms

Limit

DS(on)

Thermal Limit

Package Limit

0.1

100

1000

0.0001

0.001

0.01

, DRAIN−TO−SOURCE VOLTAGE (V)

TIME IN AVALANCHE (s)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

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NVMYS7D0N06C

TYPICAL CHARACTERISTICS

100

50% Duty Cycle

20%

10%

0.1

0.01

Single Pulse

0.001

0.0000001 0.000001 0.00001

0.0001

0.001

0.01

0.1

100

1000

PULSE TIME (sec)

Figure 13. Transient Thermal Impedance

DEVICE ORDERING INFORMATION

Device

†

Marking

Package

Shipping

NVMYS7D0N06CTWG

7D0N06C

LFPAK4

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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NVMYS7D0N06C

PACKAGE DIMENSIONS

LFPAK4 5x6

CASE 760AB

ISSUE B

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Voice Mail: 1 800−282−9855 Toll Free USA/Canada

Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:

Phone: 00421 33 790 2910

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