NVTFS015P03P8ZTAG [ONSEMI]
Power MOSFET, Single, P-Channel, µ8FL -30 V, 7.5 mΩ, -88.6 A;
| 型号： | NVTFS015P03P8ZTAG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, P-Channel, µ8FL -30 V, 7.5 mΩ, -88.6 A |
| 文件： | 总8页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
P-Channel, m8FL
V
R
I
D
(BR)DSS
DS(on)
−30 V
7.5 mW @ −10 V
12 mW @ −4.5 V
−88.6 A
-30 V, 7.5 mW, -88.6 A
S (1, 2, 3)
NVTFS015P03P8Z
Features
G (4)
P−Channel
MOSFET
• Ultra Low R
to Improve System Efficiency
• Advanced Package Technology in 3.3 x 3.3 mm for Space Saving
DS(on)
and Excellent Thermal Conduction
D (5, 6, 7, 8)
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAMS
Typical Applications
1
1
• Power Load Switch
XXXXX
WDFN8
(m8FL)
CASE 511AB
AYWWG
• Protection: Reverse Current, Over Voltage, and Reverse Negative
G
Voltage
• Battery Management
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
XXXX
AYWWG
G
J
Parameter
Drain−to−Source Voltage
Symbol
Value
Unit
WDFNW8
(m8FL WF)
CASE 515AN
V
DSS
−30
"25
−88.6
−62.6
88.2
44.1
−17
V
V
A
Gate−to−Source Voltage
V
GS
Continuous Drain Cur-
Steady
State
I
D
T
= 25°C
= 100°C
= 25°C
C
rent R
(Notes 1, 2)
q
JC
T
C
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
Power Dissipation R
(Notes 1, 2)
P
D
W
A
T
C
q
JC
T
C
= 100°C
WW
G
= Work Week
Continuous Drain Cur-
rent R (Notes 1, 2)
Steady
State
I
D
T = 25°C
A
= Pb−Free Package
q
JA
T = 100°C
A
−12
(Note: Microdot may be in either location)
Power Dissipation R
(Notes 1, 2)
P
D
W
T = 25°C
3.2
q
JA
A
T = 100°C
A
1.6
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
−353
A
A
p
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Operating Junction and Storage Temperature
Range
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
73.5
88
A
S
Single Pulse Drain to Source Avalanche
E
AS
mJ
Energy (I = 8.5 A)
L
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
1.7
Unit
°C/W
°C/W
Junction−to−Case − Steady State (Drain) (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
q
JC
R
46.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 1 in , 2 oz. Cu pad. Assuming
a 76 mm x 76 mm x 1.6 mm board.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
December, 2021 − Rev. 2
NVTFS015P03P8Z/D
NVTFS015P03P8Z
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = −250 mA
−30
V
(BR)DSS
D
Drain−to−Source Breakdown Volt-
age Temperature Coefficient
V
/
I
D
= −250 mA, ref to 25°C
−4.4
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
−10
mA
mA
DSS
GS
J
V
= −30 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
I
V
= 0 V, V = "25 V
"10
GSS
DS
GS
V
V
= V , I = −250 mA
−1.0
−3.0
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
I = −250 mA, ref to 25°C
D
5.6
5.0
8.0
77
mV/°C
mW
GS(TH)
J
R
V
= −10 V, I = −12 A
7.5
12
DS(on)
GS
GS
D
V
= −4.5 V, I = −10 A
D
Froward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
DS
= −5 V, I = −10 A
S
D
C
V
GS
= 0 V, f = 1.0 MHz,
DS
2706
907
875
37
pF
iss
V
= −15 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
V
= −4.5 V, V = −15 V,
nC
G(TOT)
GS
DS
I
= −10 A
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
5.1
G(TH)
Q
8.2
GS
Q
21.7
62.3
GD
V
GS
= −10 V, V = −15 V,
105
G(TOT)
DS
I
= −10 A
D
SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
V
V
V
= −4.5 V, V = −15 V,
25
138
55
ns
ns
d(on)
GS
DS
I
= −10 A, R = 6 W
D
G
t
r
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
98
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)
GS
Turn−On Delay Time
Rise Time
t
= −10 V, V = −15 V,
6
d(on)
GS
I
DS
= −10 A, R = 6 W
D
G
t
r
17
52
63
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
= 0 V,
= −10 A
T = 25°C
−0.8
−0.65
40.7
18.4
22.3
29
−1.3
V
SD
GS
J
I
S
T = 125°C
J
Reverse Recovery Time
Charge Time
t
V
GS
= 0 V, dl /dt = 100 A/ms,
ns
RR
s
I = −10 A
s
t
t
a
Discharge Time
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
NVTFS015P03P8Z
TYPICAL CHARACTERISTICS
90
80
70
60
50
40
30
20
100
V
= −10 V
−4.5 V
−4.2 V
GS
90
80
70
60
50
40
30
20
V
= −5 V
DS
−4.0 V
−3.8 V
−3.6 V
−3.4 V
T = 25°C
−3.2 V
−3.0 V
J
10
0
10
0
T = 125°C
T = −55°C
J
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
−V , DRAIN−TO−SOURCE VOLTAGE (V)
−V , GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
12
10
8
I
D
= −10 A
20
T = 25°C
J
V
= −4.5 V
= −10 V
GS
15
10
6
V
GS
4
5
0
2
0
T = 25°C
J
3
4
5
6
7
8
9
10
10
15
20
25
30
35
40
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.7
1.5
1.3
1.1
100,000
10,000
1000
T = 150°C
J
T = 125°C
J
T = 85°C
J
100
T = 25°C
J
0.9
10
1
0.7
0.5
−55
25
85
125
150
175
10
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS015P03P8Z
TYPICAL CHARACTERISTICS
10,000
10
V
GS
= 0 V
T = 25°C
DS
J
V
9
8
7
6
5
4
3
2
T = 25°C
f = 1 MHz
J
= −15 V
C
iss
I
D
= −10 A
C
oss
C
rss
1000
100
Q
Q
gd
gs
1
0
0
0
5
10
15
20
25
30
10
20
30
40
50
60
70
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
g
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
100
100
10
V
GS
= 0 V
V
= −15 V
= −10 A
= −10 V
DS
t
f
I
D
t
d(off)
V
GS
t
r
t
d(on)
10
1
1
T = 125°C
T = 25°C
T = −55°C
J
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
V
≤ 10 V
GS
Single Pulse
T
C
= 25°C
T
= 25°C
J(initial)
10 ms
0.5 ms
1 ms
T
= 100°C
J(initial)
1
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Drain Current vs. Time in
Avalanche
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVTFS015P03P8Z
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
20%
10%
5%
10
1
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS015P03P8ZTAG
15P3
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS015P03P8ZTAG
15PW
WDFN8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
CASE 515AN
ISSUE O
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24556H
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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© Semiconductor Components Industries, LLC, 2018
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