NVTFS016N06CTAG [ONSEMI]
Power MOSFET, Single, N-Channel, µ8FL, 60 V, 16.3 mΩ, 32 A;
| 型号： | NVTFS016N06CTAG |
| 厂家： | 
ONSEMI |
| 描述： | Power MOSFET, Single, N-Channel, µ8FL, 60 V, 16.3 mΩ, 32 A |
| 文件： | 总8页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - Power, Single
N-Channel, m8FL
60 V, 16.3 mW, 32 A
NVTFS016N06C
Features
www.onsemi.com
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVTFWS016N06C − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
60 V
16.3 mW @ 10 V
32 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
N−Channel
D (5 − 8)
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
G (4)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S (1, 2, 3)
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
MARKING
DIAGRAMS
Gate−to−Source Voltage
V
GS
20
V
1
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
32
A
C
D
1
S
S
S
G
D
D
D
D
q
JC
XXXX
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
T
C
23
(Notes 1, 3)
Steady
State
Power Dissipation
T
C
P
36
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
18
Continuous Drain
Current R
T = 25°C
A
I
D
8
q
JA
T = 100°C
A
6
(Notes 1, 2, 3)
XXXX
AYWWG
G
Steady
State
Power Dissipation
T = 25°C
A
P
2.5
1.2
160
W
D
R
(Notes 1, 2)
WDFNW8
(Full−Cut m8FL)
CASE 515AN
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
XXXX = Specific Device Code
+175
A
Y
= Assembly Location
= Year
Source Current (Body Diode)
I
S
30
22
A
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 6.6 A)
L(pk)
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2020 − Rev. 1
NVTFS016N06C/D
NVTFS016N06C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
4.1
Unit
Junction−to−Case − Steady State (Note 2)
Junction−to−Ambient − Steady State (Note 2)
R
°C/W
q
JC
R
59.6
q
JA
2
4. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 250 mA, referenced to 25°C
D
29
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
GS
DS
V
= 60 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 25 mA
2.0
4.0
V
GS(TH)
GS
DS
D
Negative Treshold Temperature
Coefficient
V
/T
I
D
= 25 mA, referenced to 25°C
−8.2
mV/°C
GS(TH)
J
Drain−to−Source On Resistance
Forward Transconductance
Gate−Resistance
R
V
= 10 V, I = 5 A
13.6
15
16.3
mW
S
DS(on)
GS
D
g
FS
V
= 5 V, I = 5 A
DS D
R
T = 25°C
A
1.4
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
489
319
5.7
pF
nC
iss
V
GS
= 0 V, f = 1 MHz,
DS
Output Capacitance
C
oss
V
= 30 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
6.9
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
1.6
G(TH)
V
GS
= 10 V, V = 48 V, I = 5 A
DS D
Q
2.6
GS
GD
Q
0.62
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
t
7.2
1.7
ns
d(on)
t
r
V
GS
I
= 10 V, V = 48 V,
DS
= 5 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
11.1
2.7
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.81
0.67
27
1.2
V
SD
J
V
= 0 V,
= 5 A
GS
S
I
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
13
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
V
DS
= 30 V, I = 5 A
S
Discharge Time
14
b
Reverse Recovery Charge
Q
15
nC
RR
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVTFS016N06C
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
40
V
GS
= 10 V to 7 V
6.0 V
35
30
25
20
15
10
T = −55°C
5.0 V
4.5 V
J
T = 25°C
J
10
0
5
0
T = 125°C
3.6 V
J
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
, DRAIN−TO−SOURCE VOLTAGE (V)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
20
19
18
17
16
15
14
13
12
T = 25°C
J
T = 25°C
D
J
I
= 5 A
18
17
16
15
V
GS
= 10 V
14
13
12
11
10
6.0 6.5
7.0
7.5
8.0
8.5
9.0
9.5
10
5
10
15
20
25
30
35
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.5
2.0
1.5
1.0
100K
10K
1K
V
I
= 10 V
= 5 A
GS
T = 175°C
J
D
T = 150°C
J
T = 125°C
J
100
10
T = 85°C
J
T = 25°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75 100 125 150 175
5
15
25
35
45
55
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS016N06C
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
C
C
ISS
7
6
5
4
3
2
Q
OSS
GD
Q
GS
100
10
1
V
I
= 48 V
= 5 A
V
= 0 V
DS
GS
C
RSS
T = 25°C
D
J
1
0
T = 25°C
J
f = 1 MHz
0
10
20
30
40
50
60
0
1
2
3
4
5
6
7
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
V
V
= 10 V
= 48 V
V
GS
= 0 V
GS
DS
I
D
= 5 A
t
d(off)
t
d(on)
10
1
t
f
t
r
T = −55°C
T = 125°C
T = 25°C
J
J
J
1
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
T = 25°C
A
Single Pulse
V
GS
≤ 10 V
100
10
10 ms
T
= 25°C
J(initial)
100 ms
10
1
1 ms
T
= 100°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
100 ms
1 sec
0.1
1
1
10
, DRAIN−SOURCE VOLTAGE (V)
100
1E−06
1E−05
1E−04
1E−03
1E−02
V
DS
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTFS016N06C
TYPICAL CHARACTERISTICS
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS016N06CTAG
16NC
m8FL
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS016N06CTAG
16NW
m8FL
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
1
SCALE 2:1
2X
ISSUE D
DATE 23 APR 2012
NOTES:
0.20
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
D
A
B
E
2X
D1
MILLIMETERS
INCHES
NOM
0.030
−−−
0.012
0.20
C
8
1
7
6
5
4
DIM
A
A1
b
c
MIN
0.70
0.00
0.23
0.15
NOM
0.75
−−−
0.30
0.20
MAX
MIN
MAX
0.031
0.002
0.016
0.010
0.80
0.05
0.40
0.25
0.028
0.000
0.009
0.006
4X
q
E1
0.008
D
3.30 BSC
3.05
2.11
3.30 BSC
3.05
1.60
0.30
0.65 BSC
0.41
0.80
0.43
0.130 BSC
0.120
0.083
0.130 BSC
0.120
0.063
0.012
0.026 BSC
0.016
0.032
0.017
0.005
0.059
−−−
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
2.95
1.98
3.15
2.24
0.116
0.078
0.124
0.088
c
2
3
A1
TOP VIEW
2.95
1.47
0.23
3.15
1.73
0.40
0.116
0.058
0.009
0.124
0.068
0.016
0.10
0.10
C
C
A
C
6X
e
0.012
0.026
0.012
0.002
0.055
0
0.020
0.037
0.022
0.008
0.063
0.30
0.65
0.30
0.06
1.40
0
0.51
0.95
0.56
0.20
1.60
SEATING
PLANE
0.13
1.50
−−−
DETAIL A
SIDE VIEW
DETAIL A
q
12
12
_
_
_
_
8X b
0.10
0.05
C
C
A
B
SOLDERING FOOTPRINT*
8X
e/2
0.42
0.65
4X
L
4X
0.66
PITCH
1
8
4
5
PACKAGE
OUTLINE
K
E2
M
E3
3.60
L1
D2
G
2.30
BOTTOM VIEW
0.57
0.47
0.75
GENERIC
MARKING DIAGRAM*
2.37
3.46
1
XXXXX
DIMENSION: MILLIMETERS
AYWWG
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
G
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
CASE 515AN
ISSUE O
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24556H
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
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