NVTFWS002N04CLTAG [ONSEMI]
功率 MOSFET，40 V，2.0 Ω，142 A，单 N 沟道;
| 型号： | NVTFWS002N04CLTAG |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET，40 V，2.0 Ω，142 A，单 N 沟道 |
| 文件： | 总8页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – Power, Single
N-Channel
40 V, 2.2 mW, 142 A
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
2.2 mW @ 10 V
3.5 mW @ 4.5 V
40 V
142 A
N−Channel
D (5 − 8)
NVTFS002N04CL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
G (4)
• Low Capacitance to Minimize Driver Losses
• NVTFWS002N04CL − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
S (1, 2, 3)
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
WDFN8
(m8FL)
CASE 511DY
J
1
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
S
S
S
G
D
D
D
D
1
XXXX
AYWWG
G
V
DSS
WDFNW8
CASE 515AP
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
142
80
A
C
D
q
JC
T
C
(Notes 1, 2, 3, 4)
XXXX = Specific Device Code
Steady
State
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Power Dissipation
T
C
P
85
W
A
D
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
27
= Pb−Free Package
Continuous Drain
Current R
T = 25°C
I
28
A
D
(Note: Microdot may be in either location)
q
JA
T = 100°C
A
20
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
3.2
1.6
706
W
D
R
(Notes 1, 3)
q
JA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
70.4
268
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 10.2 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
1.8
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
46.5
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
January, 2022 − Rev. 2
NVTFS002N04CL/D
NVTFS002N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 250 mA
40
V
(BR)DSS
GS
D
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
= 40 V
GS
DS
V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= V , I = 90 mA
1.2
2.0
2.2
3.5
135
V
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
R
V
= 10 V, I = 50 A
1.8
2.8
mW
DS(on)
GS
D
= 4.5 V, I = 50 A
GS
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 15 V, I = 50 A
S
DS
D
C
2940
1260
47
pF
iss
V
GS
= 0 V, f = 1.0 MHz,
Output Capacitance
C
oss
V
DS
= 25 V
Reverse Transfer Capacitance
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C
rss
Q
5.3
nC
G(TH)
Q
9.6
V
V
= 10 V, V = 20 V, I = 50 A
DS D
GS
GD
GS
Q
7.4
Q
= 10 V, V = 20 V, I = 50 A
49
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
14
77
70
22
d(on)
t
r
V
GS
= 10 V, V = 32 V,
DS
I
D
= 50 A
Turn−Off Delay Time
Fall Time
t
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.84
0.72
54
1.2
V
SD
J
V
= 0 V,
GS
S
I
= 50 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
24
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 50 A
Discharge Time
30
b
Reverse Recovery Charge
Q
43
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVTFS002N04CL
TYPICAL CHARACTERISTICS
210
210
180
150
120
90
4.2 V
4.0 V
V
GS
= 10 V to 4.5 V
V
DS
= 10 V
180
150
120
90
3.8 V
3.6 V
3.4 V
3.2 V
T = 25°C
J
60
60
3.0 V
2.8 V
30
0
30
0
T = 125°C
J
T = −55°C
J
0
1
2
3
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
5.0
4.5
4.0
3.5
3.0
2.5
2.0
T = 25°C
D
T = 25°C
J
J
I
= 50 A
V
= 4.5 V
= 10 V
GS
V
GS
1
0
1.5
1.0
3
4
5
6
7
8
9
10
10
30
50
70
90
110
130
150
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1M
100K
10K
1K
2.0
V
I
= 10 V
= 50 A
GS
1.8
1.6
T = 175°C
J
D
T = 150°C
J
T = 125°C
J
1.4
1.2
T = 85°C
J
100
1.0
10
1
0.8
0.6
T = 25°C
J
−50 −25
0
25
50
75 100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
www.onsemi.com
3
NVTFS002N04CL
TYPICAL CHARACTERISTICS
10K
10
C
ISS
9
8
7
C
OSS
1K
6
5
4
3
100
Q
Q
GD
GS
C
RSS
10
1
V
DS
= 20 V
2
V
= 0 V
GS
T = 25°C
J
T = 25°C
J
1
0
I
D
= 50 A
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
5
10 15 20
25 30 35
40 45 50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
10
V
GS
= 0 V
t
r
t
t
d(off)
t
f
10
1
d(on)
1
V
V
= 10 V
= 32 V
= 50 A
GS
T = 125°C
J
T = 25°C
J
T = −55°C
J
DS
I
D
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
10 ms
V
GS
0.5 ms
1 ms
10 ms
T
= 100°C
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
NVTFS002N04CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS002N04CLTAG
02NL
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS002N04CLTAG
02LW
WDFNW8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
DATE 21 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year Code
WW = Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON90827G
WDFN8 3.3x3.3, 0.65P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF)
CASE 515AP
ISSUE O
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
XXXX
AYWWG
G
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON24557H
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
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