NVTFWS8D1N08HTAG [ONSEMI]
Single N-Channel Power MOSFET 80V, 61A, 8.3mΩ;
| 型号： | NVTFWS8D1N08HTAG |
| 厂家： | 
ONSEMI |
| 描述： | Single N-Channel Power MOSFET 80V, 61A, 8.3mΩ |
| 文件： | 总9页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power,
N-Channel, Shielded Gate
80 V, 8.3 mW, 61 A
NVTFS8D1N08H
Features
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• Small Footprint (5x6 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
• NVTFWS8D1N08H − Wettable Flank Option for Enhanced Optical
Inspection
80 V
8.3 mW @ 10 V
61 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
N−Channel
D (5−8)
Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
V
DSS
G (4)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
Steady
State
T
= 25°C
I
D
61
A
C
q
JC
S (1, 2, 3)
T
C
= 100°C
43
(Notes 1, 3)
Power Dissipation
Steady
State
T
= 25°C
P
75
38
14
W
A
C
D
DD D D
R
(Note 1)
q
JC
T
C
= 100°C
Continuous Drain
Current R
Steady
State
T = 25°C
A
I
D
q
JA
T = 25°C
A
10
(Notes 1, 2, 3)
GS S S
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
Pin 1
Power Dissipation
Steady
State
T = 25°C
A
P
D
3.8
1.9
216
W
R
(Notes 1, 2)
WDFNW8
(3.3x3.3, 0.65 P)
CASE 515AP
q
JA
T = 25°C
A
Pulsed Drain Current
T = 25°C, t = 100 ms
A
I
DM
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
MARKING DIAGRAMS
Source Current (Body Diode)
I
S
61
A
Single Pulse Drain−to−Source Avalanche
Energy
E
AS
113
mJ
1W08
AYWWG
G
1V08
AYWW
Lead Temperature for Soldering Purposes
T
260
°C
L
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
1V08/1W08 = Specific Device Code
A
Y
WW
G
= Assembly Location
= Year
2
= Work Week
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
= Pb−Free Package
(Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
December, 2020 − Rev. 0
NVTFS8D1N08H/D
NVTFS8D1N08H
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2
Unit
Junction−to−Case − Steady State (Note 4)
R
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 4)
R
39
q
JA
2
4. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
80
−
−
−
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
−
52
mV/°C
(BR)DSS
T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
T = 25°C
−
−
−
−
−
−
10
mA
DSS
GS
DS
J
= 64 V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= V , I = 270 mA
2.0
−
2.8
−7.2
6.4
9
4.0
−
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
mV/°C
mW
GS(TH)
R
V
V
= 10 V, I = 16 A
−
8.3
12.6
DS(on)
GS
D
= 6 V, I = 13 A
−
GS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, V = 40 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
1450
776
46
−
−
−
−
−
−
−
−
−
pF
ISS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
Q
V
GS
V
GS
V
GS
= 6 V, V = 40 V; I = 16 A
9
nC
nC
G(TOT)
DS
D
= 10 V, V = 40 V; I = 16 A
23
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
= 10 V, V = 40 V; I = 16 A
9
G(TH)
DS
D
Q
7.2
4.2
4.6
GS
GD
GP
Q
V
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
V
D
= 10 V, V = 40 V,
−
−
−
−
9.1
13
−
−
−
−
ns
d(ON)
GS
DS
I
= 16 A, R = 2.5 W
G
Rise Time
t
r
Turn−Off Delay Time
t
23.8
2.5
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Source−to−Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Charge Time
V
V
= 0 V, I = 16 A
−
−
−
−
−
0.81
40.5
46.8
22.6
17.9
1.2
−
V
SD
GS
S
t
I = 16 A, di/dt = 100 A/ms
F
ns
nC
ns
ns
RR
Q
−
RR
t
a
−
Discharge Time
t
b
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS8D1N08H
TYPICAL CHARACTERISTICS
70
77
70
63
56
49
42
35
28
21
14
10 V to
7 V
5.6 V
5.4 V
V
DS
= 10 V
5.2 V
5.0 V
60
50
40
30
20
V
= 4.8 V
GS
T = 25°C
J
10
0
7
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
16
14
12
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
T = 25°C
J
T = 25°C
D
J
I
= 16 A
V
GS
= 10 V
10
8
6
4
4.0
3.5
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
, GATE−TO−SOURCE VOLTAGE (V)
5
10
15
20
25
30
35
40
V
GS
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
2.4
1E+05
1E+04
1E+03
1E+02
V
= 10 V
= 16 A
GS
2.2
2.0
1.8
1.6
1.4
1.2
1.0
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
T = 25°C
J
1E+01
1E+00
0.8
0.6
−50 −25
0
25
50
75
100 125 150 175
5
15
25
35
45
55
65
75
T , JUNCTION TEMPERATURE (°C)
J
V
, DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTFS8D1N08H
TYPICAL CHARACTERISTICS
10
9
10K
1K
C
ISS
8
7
6
5
4
3
C
OSS
RSS
Q
Q
GD
GS
100
C
10
1
T = 25°C
V
= 0 V
J
GS
2
1
0
I
D
= 16 A
T = 25°C
J
V
DS
= 40 V
f = 1 MHz
0
5
10
15
20
25
0
10
20
30
40
50
60
70
80
Q , TOTAL GATE CHARGE (nC)
G
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
100
10
V
GS
= 0 V
V
V
= 10 V
= 40 V
= 16 A
GS
DS
I
D
t
d(off)
t
f
t
r
t
d(on)
1
10
1
T = 125°C
J
T = 25°C T = −55°C
J J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
T
= 25°C
C
T
= 100°C
Single Pulse
≤ 10 V
J(initial)
10 ms
V
1
GS
0.5 ms
1 ms
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
t , TIME IN AVALANCHE (s)
AV
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTFS8D1N08H
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Transient Thermal Impedance
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTFS8D1N08HTAG
1V08
WDFN8
1500 / Tape & Reel
1500 / Tape & Reel
(Pb−Free)
NVTFWS8D1N08HTAG
1W08
WDFNW8
(Pb−Free, Wettable Flanks)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTFS8D1N08H
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
0.20 C
2X
B
D
0.10
D2
C A B
8
A
e/2
L1
M
8
5
5
G
E3
E2
E
E1
0.10
C A B
L
K
2X
0.20 C
G1
PIN 1
AREA
1
4
4
1
b
(8X)
e
0.10
0.05
C A B
C
BOTTOM VIEW
TOP VIEW
SIDE VIEW
NOTES:
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS D1 & E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS NOR GATE BURRS.
D1
A
(4X)
c
Ө
0.10 C
A1
(8X)
MILLIMETERS
DIM
0.10 C
MIN NOM MAX
C
A
A1
b
0.70 0.75 0.80
0.00 0.05
0.23 0.33 0.43
0.15 0.20 0.25
3.20 3.30 3.40
2.95 3.13 3.30
SEATING PLANE
−
END VIEW
c
3.46
2.38
D
D1
D2
E
E1
E2
E3
e
1.98
2.20 2.40
8
5
3.20 3.30 3.40
2.80 3.00 3.15
1.40 1.60 1.80
0.15 0.25 0.40
0.65 BSC
0.78 (4X)
0.75
2.51
4.10
G
G1
K
L
L1
M
0.30 0.43 0.55
0.25 0.35 0.45
0.55 0.75 0.95
0.35 0.52 0.65
0.06 0.15 0.30
0.57
1.00
1.35
0
1.50 1.60
12
0.60 (3X)
0.65
−
Ө
1
4
0.43 (8X)
RECOMMENDED LAND PATTERN
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6
NVTFS8D1N08H
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF)
CASE 515AP
ISSUE O
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7
NVTFS8D1N08H
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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