NVTYS004N03CLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel;
| 型号： | NVTYS004N03CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel |
| 文件： | 总8页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Is Now
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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MOSFET – Power, Single,
N-Channel
30 V, 85 A
NVTYS004N03CL
Features
• Low R
www.onsemi.com
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free and are RoHS Compliant
4.2 mW @ 10 V
6.1 mW @ 4.5 V
30 V
85 A
MAXIMUM RATINGS (T = 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Symbol Value Unit
V
30
20
V
V
A
DSS
N−Channel MOSFET
D (5−8)
Gate−to−Source Voltage
V
GS
Continuous Drain
T = 25°C
I
D
21
A
Current R
(Note 1)
q
JA
T = 100°C
A
15
Power Dissipation R
(Note 1)
T = 25°C
P
3
W
A
q
D
D
JA
A
G (4)
T = 100°C
A
1.6
85
Steady
State
Continuous Drain
T
= 25°C
= 100°C
= 25°C
I
D
C
C
S (1,2,3)
Current R
(Note 1)
q
JC
T
C
60
MARKING
DIAGRAM
Power Dissipation
(Note 1)
T
P
51.5
26
W
R
q
JC
T
C
= 100°C
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
369
A
004N
03CL
AWLYW
A
p
LFPAK8
3.3x3.3
CASE 760AD
Operating Junction and Storage Temperature
Range
T ,
−55 to
+175
°C
J
stg
T
Source Current (Body Diode)
I
S
43
A
004N03CL = Specific Device Code
= Assembly Location
WL = Wafer Lot
Single Pulse Drain−to−Source Avalanche Energy
E
AS
121
mJ
A
(I = 6 A
)
L
pk
Y
W
= Year
= Work Week
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
†
Device
Package
Shipping
NVTYS004N03CLTWG LFPAK33
3000 / Tape
& Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2021 − Rev. 0
NVTYS004N03CL/D
NVTYS004N03CL
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
2.9
Unit
Junction−to−Case (Drain)
R
q
JC
°C/W
Junction−to−Ambient – Steady State
R
47.6
q
JA
2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular
conditions noted.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
30
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
18.9
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
= 24 V
T = 25°C
1.0
10
DSS
GS
DS
J
V
mA
T = 125°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V
=
GS
20 V
100
nA
GSS
DS
V
V
= V , I = 250 mA
1.3
2.2
V
GS(TH)
GS
DS
D
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.4
3
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 30 A
= 30 A
4.2
6.1
DS(on)
GS
D
mW
V
GS
= 4.5 V
4.7
58
D
Forward Transconductance
Gate Resistance
g
FS
V
= 1.5 V, I = 15 A
S
DS
D
R
T = 25°C
A
0.7
W
G
CHARGES AND CAPACITANCES
Input Capacitance
C
1520
808
26
ISS
Output Capacitance
C
V
= 0 V, f = 1 MHz, V = 15 V
pF
nC
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Capacitance Ratio
C
C
/C
V
GS
= 0 V, V = 15 V, f = 1 MHz
0.023
9
RSS ISS
DS
Total Gate Charge
Q
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Plateau Voltage
Total Gate Charge
Q
2
G(TH)
Q
4.2
2
V
= 4.5 V, V = 15 V; I = 30 A
GS
GD
GP
GS
DS
D
Q
V
3
V
Q
V
= 10 V, V = 15 V; I = 30 A
21
nC
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
13.5
6
d(ON)
t
r
V
= 4.5 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
Fall Time
t
18
6
d(OFF)
t
f
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS004N03CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Symbol
Test Condition
Min
Typ
Max
Unit
t
9
3
d(ON)
Rise Time
t
r
V
= 10 V, V = 15 V,
DS
GS
D
ns
I
= 15 A, R = 3.0 W
G
Turn−Off Delay Time
t
23
3.0
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.8
0.7
27
1.1
SD
J
V
S
= 0 V,
GS
V
I
= 10 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
RR
t
13
ns
a
V
= 0 V, dIS/dt = 100 A/ms,
GS
I
S
= 30 A
Discharge Time
t
14.5
9
b
Reverse Recovery Charge
Q
nC
RR
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVTYS004N03CL
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
200
V
GS
= 10 V to 5.0 V
4.5 V
V
DS
= 5 V
180
160
140
120
100
80
4.0 V
3.6 V
3.2 V
T = 25°C
J
60
60
40
40
20
0
2.8 V
2.4 V
20
T = 125°C
J
T = −55°C
J
0
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
8
7
6
5
4
3
2
20
18
16
14
12
10
8
T = 25°C
J
T = 25°C
D
J
I
= 30 A
V
= 4.5 V
GS
V
= 10 V
GS
6
4
1
0
2
0
2
3
4
5
6
7
8
9
10
10 20
30
40
50
60
70
80
90 100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100K
10K
1K
4
T = 175°C
J
V
= 10 V
= 30 A
GS
T = 150°C
J
I
D
T = 125°C
J
3
T = 85°C
J
100
10
2
1
0
T = 25°C
J
1
0.1
0.01
0.001
−50 −25
0
25
50
75 100 125 150 175
5
10
V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
15
20
25
30
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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4
NVTYS004N03CL
TYPICAL CHARACTERISTICS
10,000
1000
100
10
9
C
ISS
8
7
C
OSS
6
5
4
3
Q
GD
Q
GS
C
RSS
10
1
V
= 15 V
V
= 0 V
DS
GS
2
T = 25°C
T = 25°C
J
J
1
0
I
D
= 30 A
f = 1 MHz
0
5
10
15
20
25
30
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
GS
= 0 V
V
V
= 10 V
= 15 V
= 15 A
GS
100
10
DS
I
D
t
d(off)
T = 175°C
J
T = 150°C
J
t
f
T = 125°C
J
t
r
T = 25°C
J
10
1
t
1
d(on)
T = −55°C
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.5
0.7
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.9
1.1
1.3
1.5
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25°C
J(initial)
10
T
C
= 25°C
Single Pulse
≤ 10 V
0.5 ms
1 ms
10 ms
V
T
= 100°C
GS
J(initial)
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.1
1
10
100
1000
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
NVTYS004N03CL
TYPICAL CHARACTERISTICS
100
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
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6
NVTYS004N03CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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