NVTYS004N04CLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel, 40 V, 4.3 mΩ, 85 A;
| 型号： | NVTYS004N04CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel, 40 V, 4.3 mΩ, 85 A |
| 文件： | 总7页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
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MOSFET - Power, Single
N-Channel
40 V, 4.3 mW, 85 A
NVTYS004N04CL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
4.3 mW @ 10 V
6.9 mW @ 4.5 V
40 V
85 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
40
Unit
V
V
DSS
N−Channel
D (5 − 8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
D
84
A
C
q
JC
T
C
59
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
D
55
W
A
G (4)
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
27
Continuous Drain
Current R
T = 25°C
A
I
D
20
S (1, 2, 3)
q
JA
T = 100°C
A
14
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
D
3.2
1.6
371
W
R
(Notes 1, 3)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
A
I
DM
A
p
LFPAK8
3.3x3.3
CASE 760AD
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
46
A
Single Pulse Drain−to−Source Avalanche
E
AS
173
mJ
MARKING DIAGRAM
Energy (I
= 5.2 A)
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
004N
04CL
AWLYW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
004N04CL = Specific Device Code
= Assembly Location
WL = Wafer Lot
A
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
2.7
Unit
Y
W
= Year
= Work Week
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
(Note: Microdot may be in either location)
R
47.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which substantially
less than 100% of the heat flows to single case surface.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2021 − Rev. 1
NVTYS004N04CL/D
NVTYS004N04CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
V
= 0 V, I = 250 mA
40
V
(BR)DSS
GS
D
I
T = 25°C
10
mA
DSS
J
V
= 0 V,
= 40 V
GS
DS
V
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
V
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
= V , I = 50 mA
1.2
2.0
4.3
6.9
V
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
R
V
= 10 V, I = 20 A
3.6
5.6
90
mW
DS(on)
GS
D
= 4.5 V, I = 20 A
GS
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 5 V, I = 40 A
S
DS
D
C
V
GS
= 0 V, f = 1.0 MHz,
1600
590
21
pF
iss
V
DS
= 25 V
Output Capacitance
C
oss
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
Q
11.9
2.4
4.7
4.2
25
nC
nC
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Q
G(TH)
V
= 4.5 V, V = 32 V, I = 40 A
DS D
GS
Q
GS
Q
GD
V
= 10 V, V = 32 V, I = 40 A
nC
ns
G(TOT)
GS
DS
D
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
t
13
6
d(on)
t
r
V
GS
= 4.5 V, V = 32 V,
DS
I
D
= 40 A, R = 1 W
G
Turn−Off Delay Time
Fall Time
t
17
6
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
V
= 0 V,
T = 25°C
0.86
0.75
30
1.2
V
SD
GS
S
J
I
= 40 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
13
a
V
GS
= 0 V, dl /dt = 100 A/ms,
S
I
S
= 40 A
Discharge Time
17
b
Reverse Recovery Charge
Q
10
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVTYS004N04CL
TYPICAL CHARACTERISTICS
80
70
60
50
40
30
20
80
V
DS
= 10 V
10 V to 3.6 V
70
60
50
40
30
20
3.2 V
2.8 V
T = 25°C
J
10
0
10
0
T = 125°C
J
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
10
9
T = 25°C
J
T = 25°C
D
J
45
40
35
30
25
20
15
10
I
= 20 A
8
7
V
V
= 4.5 V
= 10 V
GS
6
5
4
GS
3
2
5
0
2
3
4
5
6
7
8
9
10
10
20
30
40
50
60
70
80
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
100000
10000
1000
100
2.5
2.0
1.5
1.0
V
= 10 V
= 20 A
GS
T = 175°C
J
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
10
T = 25°C
J
0.5
0
1
0.1
−50 −25
0
25
50
75
100 125 150 175
5
10
15
20
25
30
35
40
T , JUNCTION TEMPERATURE (°C)
J
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTYS004N04CL
TYPICAL CHARACTERISTICS
10
9
10000
1000
8
C
ISS
7
6
5
4
3
C
OSS
Q
Q
GD
GS
100
10
V
DS
= 20 V
V
= 0 V
2
1
0
GS
I
D
= 40 A
T = 25°C
J
C
T = 25°C
J
RSS
f = 1 MHz
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
1000
100
V
GS
= 0 V
10
1
t
r
T = 25°C
J
t
t
d(off)
0.1
t
10
1
d(on)
f
V
V
= 4.5 V
= 20 V
= 40 A
0.01
GS
DD
I
D
T = −55°C
J
T = 125°C
J
0.001
1
10
R , GATE RESISTANCE (W)
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10
1000
100
10
T
= 25°C
J(initial)
10 ms
T
V
= 25°C
T
) = 150°C
C
J(initial
≤ 10 V
GS
1
0.5 ms
1 ms
10 ms
Single Pulse
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.0001
0.001
TIME IN AVALANCHE (s)
0.01
0.1
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
NVTYS004N04CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTYS004N04CLTWG
004N
04CL
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTYS004N04CL
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE A
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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NVTYS004N04CL/D
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