NVTYS008N06CLTWG [ONSEMI]
MOSFET – Power, Single, N-Channel;
| 型号： | NVTYS008N06CLTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, N-Channel |
| 文件： | 总7页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, Single
N-Channel
60 V, 8.0 mW, 63 A
NVTYS008N06CL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
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• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
8.0 mW @ 10 V
11 mW @ 4.5 V
60 V
63 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
N−Channel
D (5 − 8)
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
63
A
C
D
q
JC
T
C
44
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
56
W
A
D
G (4)
R
(Notes 1, 2, 3)
q
JC
T
C
= 100°C
28
S (1, 2, 3)
Continuous Drain
Current R
T = 25°C
A
I
D
15
q
JA
T = 100°C
A
11
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
3.2
1.6
279
W
D
R
(Notes 1, 3)
q
JA
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
LFPAK8
3.3x3.3
CASE 760AD
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
47
A
Single Pulse Drain−to−Source Avalanche
E
AS
117
mJ
Energy (I
= 3.1 A)
MARKING DIAGRAM
L(pk)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
008N
06CL
AWLYW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
008N06CL = Specific Device Code
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
2.7
Unit
WW
= Work Week
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
47.4
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
May, 2021 − Rev. 0
NVTYS008N06CL/D
NVTYS008N06CL
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
28
(BR)DSS
mV/°C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25°C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125°C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
V
V
= V , I = 50 mA
1.2
2.2
V
GS(TH)
GS
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
−5.6
6.2
8.5
68
mV/°C
GS(TH)
J
R
V
= 10 V
I
I
= 9 A
= 7 A
8.0
11
DS(on)
GS
D
mW
V
GS
= 4.5 V
D
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
g
FS
V
= 5 V, I = 25 A
S
DS
D
C
1230
660
11
ISS
Output Capacitance
C
C
V
= 0 V, f = 1 MHz, V = 25 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
Q
V
= 4.5 V, V = 48 V; I = 25 A
8
nC
nC
G(TOT)
G(TOT)
GS
DS
D
Total Gate Charge
Q
V
= 10 V, V = 48 V; I = 25 A
17
GS
DS
D
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
1.8
3.2
1.9
2.8
G(TH)
Q
nC
V
GS
GD
GP
V
GS
= 10 V, V = 48 V; I = 25 A
DS
D
Q
V
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
12
5.9
15
d(ON)
Rise Time
t
r
V
= 4.5 V, V = 48 V,
DS
GS
D
ns
V
I
= 25 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
5.5
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25°C
0.85
0.75
33
1.2
SD
RR
J
V
S
= 0 V,
GS
I
= 25 A
T = 125°C
J
Reverse Recovery Time
Charge Time
t
t
a
16
ns
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 25 A
Discharge Time
t
b
16
Reverse Recovery Charge
Q
14.5
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
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2
NVTYS008N06CL
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
80
V
= 4.8 V
to 10 V
GS
3.6 V
3.2 V
70
60
50
40
30
20
10
0
4 V
T = 25°C
J
2.8 V
2.6 V
2.4 V
T = 125°C
J
T = −55°C
J
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
10
5
20
T = 25°C
J
T = 25°C
D
J
I
= 25 A
15
10
5
V
= 4.5 V
GS
V
= 10 V
GS
0
0
10
20
30
40
50
60
70
80
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
3
T = 175°C
V
= 10 V
= 25 A
J
GS
10000
1000
100
10
I
D
2.5
2
T = 150°C
J
T = 125°C
J
T = 85°C
J
1.5
1
T = 25°C
J
1
0.1
0.5
5
10
15
20
25
30
−55 −30 −5
20
45
70
95
120 145 170
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTYS008N06CL
TYPICAL CHARACTERISTICS
0,000
1,000
100
10
10
9
C
ISS
8
7
6
5
4
3
2
1
0
C
OSS
Q
GD
Q
GS
V
= 48 V
DS
C
V
= 0 V
RSS
GS
T = 25°C
J
T = 25°C
J
I
D
= 25 A
f = 1 MHz
1
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
60
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
1
100
t
r
V
= 0 V
GS
t
f
t
d(off)
t
d(on)
10
T = 25°C
J
V
V
= 4.5 V
= 48 V
GS
DS
= 25 A
T = −55°C
J
T = 125°C
J
I
D
1
1
10
R , GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
100
10
T
V
= 25°C
C
≤ 10 V
GS
Single Pulse
T
= 25°C
J(initial)
10 ms
T
= 100°C
J(initial)
1
1
0.5 ms
1 ms
10 ms
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
0.1
1
10
100
1000
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS008N06CL
TYPICAL CHARACTERISTICS
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
Shipping
NVTYS008N06CLTWG
008N
06CL
LFPAK33
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
DATE 16 NOV 2020
GENERIC
MARKING DIAGRAM*
XXXXX
XXXXX
AWLYW
XXXX = Specific Device Code
A
= Assembly Location
WL = Wafer Lot
Y
= Year
W
= Work Week
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05544H
LFPAK8 3.3x3.3, 0.65P
PAGE 1 OF 1
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