NVTYS9D6P04M8LTWG [ONSEMI]
MOSFET – Power, Single, P-Channel,;
| 型号： | NVTYS9D6P04M8LTWG |
| 厂家： | 
ONSEMI |
| 描述： | MOSFET – Power, Single, P-Channel, |
| 文件： | 总6页 (文件大小：256K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET - Power, Single
P-Channel
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
9.6 mW @ −10 V
16 mW @ −4.5 V
−40 V
−71 A
-40 V, 9.6 mW, -71 A
NVTYS9D6P04M8L
Features
P−Channel MOSFET
D (5−8)
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
G (4)
S (1,2,3)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
−40
20
Unit
V
V
DSS
LFPAK8
3.3x3.3
CASE 760AD
Gate−to−Source Voltage
V
GS
V
Continuous Drain
Current R
T
T
T
T
= 25°C
= 100°C
= 25°C
= 100°C
I
−71
−50
75
A
C
C
C
C
D
q
JC
(Notes 1, 2, 4)
Steady
State
Power Dissipation
P
W
A
D
MARKING DIAGRAM
R
(Notes 1, 2)
q
JC
37.5
−16
−11
3.9
9D6P
04M8L
AWLYW
Continuous Drain
Current R
T = 25°C
A
I
D
q
JA
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
9D6P04M8L = Specific Device Code
R
(Notes 1, 3)
q
JA
T = 100°C
A
1.9
A
WL
Y
= Assembly Location
= Wafer Lot
= Year
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
423
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
WW
= Work Week
J
stg
Source Current (Body Diode)
I
62.5
260
A
S
ORDERING INFORMATION
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
°C
L
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Notes 1, 2 and 4)
R
2
°C/W
q
JC
Junction−to−Ambient − Steady State (Note 3)
R
38.6
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
May, 2023 − Rev. 1
NVTYS9D6P04M8L/D
NVTYS9D6P04M8L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
−40
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
20
mV/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
DS
= 0 V,
T = 25°C
J
−1.0
mA
DSS
GS
V
= −40 V
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
V
V
= V , I = −580 mA
−1
1.65
7.7
11
−3
9.6
16
V
GS(TH)
GS
DS
D
Drain−to−Source On Resistance
R
V
= −10 V, I = −25 A
mW
DS(on)
GS
D
= −4.5 V, I = −20 A
GS
D
CHARGES AND CAPACITANCES
Input Capacitance
C
2368
842
32
pF
nC
iss
V
GS
= 0 V, f = 1.0 MHz,
DS
Output Capacitance
C
oss
V
= −25 V
Reverse Transfer Capacitance
Total Gate Charge
C
rss
Q
35
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Q
3.1
7.5
3.9
G(TH)
V
GS
= −10 V, V = −20 V,
DS
I
= −25 A
D
Q
GS
GD
Q
SWITCHING CHARACTERISTICS, V = −10 V (Note 6)
GS
Turn−On Delay Time
Rise Time
t
9.6
29
ns
d(on)
t
r
V
V
= −10 V, V = −20 V,
DS
GS
I
= −25 A, R = 6 W
D
G
Turn−Off Delay Time
Fall Time
t
187
99
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
= 0 V,
= −25 A
T = 25°C
−0.88
−0.7
45
−1.25
V
SD
GS
J
I
S
T = 175°C
J
Reverse Recovery Time
Charge Time
t
ns
RR
t
t
21.7
23.3
37
a
V
GS
= 0 V, dI /dt = 100 A/ms,
S
I
S
= −25 A
Discharge Time
b
Reverse Recovery Charge
Q
56
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTYS9D6P04M8L
TYPICAL CHARACTERISTICS
200
160
120
80
200
6.5 V
V
GS
= 10 V
V
DS
= −5 V
6.0 V
5.5 V
5.0 V
4.5 V
160
120
80
T = 25°C
J
4.0 V
3.5 V
T = 175°C
J
40
0
40
0
3.0 V
2.5 V
T = −55°C
J
0
0.5
1.0
1.5
2.0
2.5
3.0
2
3
4
5
6
7
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
13
12
11
10
9
13
12
11
10
9
V
GS
= −4.5 V
T = 25°C
J
T = 25°C
D
J
I
= −25 A
V
GS
= −10 V
8
7
8
7
4
5
6
7
8
9
10
0
40
80
120
160
200
−V , GATE−TO−SOURCE VOLTAGE (V)
GS
−I , DRAIN CURRENT (A)
D
Figure 3. On−Resistance vs. Gate−to−Source
Figure 4. On−Resistance vs. Drain Current and
Voltage
Gate Voltage
1.6
1.4
1.2
1.0
100
10
1
T = 175°C
V
= −10 V
= −25 A
J
GS
I
D
T = 150°C
J
T = 125°C
J
T = 85°C
J
0.1
0.8
0.6
V
GS
= 0 V
0.01
−100
−50
0
50
100
150
200
0
10
20
30
40
T , JUNCTION TEMPERATURE (°C)
J
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Figure 5. On−Resistance Variation with
Figure 6. Drain−to−Source Leakage Current
Temperature
vs. Voltage
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3
NVTYS9D6P04M8L
TYPICAL CHARACTERISTICS
10K
1K
10
9
Q
G(TOT)
C
ISS
8
7
6
5
C
OSS
Q
Q
GD
GS
4
3
2
1
0
100
10
V = −20 V
DS
V
= 0 V
GS
T = 25°C
C
T = 25°C
J
RSS
J
I
D
= −25 A
f = 1 MHz
0
10
20
30
40
0
5
10
15
20
25
30
35
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
V
GS
= 0 V
100
10
t
d(off)
t
f
t
r
t
d(on)
10
1
1
T = 150°C
J
V
V
= −10 V
= −20 V
= −25 A
GS
DS
I
D
T = 25°C
T = −55°C
J
J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2
0.4
0.6
0.8
1.0
1.2
−V , SOURCE−TO−DRAIN VOLTAGE (V)
SD
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
T
= 25°C
C
Single Pulse
≤ 10 V
V
GS
T
= 25°C
J(initial)
10 ms
100 ms
T
= 100°C
J(initial)
10
0.5 ms
1 ms
1
R
Limit
DS(on)
10 ms
Thermal Limit
Package Limit
0.1
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
−V , DRAIN−TO−SOURCE VOLTAGE (V)
DS
t , TIME IN AVALANCHE (mS)
AV
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTYS9D6P04M8L
TYPICAL CHARACTERISTICS
40
Duty Cycle = 0.5
10 0.2
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
0.000001 0.00001
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
†
Marking
Package
LFPAK33
Shipping
NVTYS9D6P04M8LTWG
9D6P
04M8L
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVTYS9D6P04M8L
PACKAGE DIMENSIONS
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
ISSUE E
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