NVXK2KR80WDT [ONSEMI]
EliteSiC Power Module for OBC, 80mΩ, 1200V, Vienna Rectifier, in APM32 Series;
| 型号： | NVXK2KR80WDT |
| 厂家： | 
ONSEMI |
| 描述： | EliteSiC Power Module for OBC, 80mΩ, 1200V, Vienna Rectifier, in APM32 Series |
| 文件： | 总10页 (文件大小：1133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Silicon Carbide (SiC)
Module – EliteSiC Power
Module for OBC,
V
R
Max
I Max
D
(BR)DSS
DS(on)
1200 V
116 mW @ 20 V
20 A
80ꢀmohm, 1200ꢀV, 20 A,
Vienna Rectifier,
in APM32 Series
NVXK2KR80WDT
Features
SiC MOSFET Vienna Rectifier Module
• DIP Silicon Carbide Vienna Rectifier Power Module for On−board
Charger (OBC) for xEV Applications
• Creepage and Clearance per IEC60664−1, IEC 60950−1
• Compact Design for Low Total Module Resistance
• Module Serialization for Full Traceability
• Lead Free, ROHS and UL94V−0 Compliant
• Automotive Qualified per AEC−Q101 and AQG324
Typical Applications
• Vienna PFC for On−Board Charger in xEV Applications
APM32
MAXIMUM RATINGS MOSFET (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
1200
Unit
V
ORDERING INFORMATION
V
DSS
Device
Package
Shipping
Gate−to−Source Voltage
V
+25/−15
+20/−5
V
GS
NVXK2KR80WDT
APM32
10 ea / Tube
Recommended Operation Values of
V
GSop
V
Gate−to−Source Voltage, T ≤ 175°C
(Pb−Free)
J
Continuous Drain
T
= 25°C
I
20
82
A
W
A
C
D
Current (Notes1, 2)
Power Dissipation
(Note 1)
P
D
Pulsed Drain Current
(Note 3)
T
T
p
R
= 25°C
= 25°C,
I
110
266
C
DM
Single Pulse Surge
Drain Current Capability
I
A
C
DSC
t = 10 ms,
= 4.7 W
G
Operating Junction and Storage
Temperature
T , T
−55 to
175
°C
J
stg
Source Current (Body Diode)
I
S
18
A
Single Pulse Drain–to−Source
Avalanche Energy (Note 4)
E
AS
180
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Particular conditions specified determine thermal resistance values shown.
Infinite heatsink with T = 100°C for R . For R
assembled to 3 mm thick
θ
Ψ
JS
C
JC
aluminum heatsink with infinite cooling bottom surface at 85°C, through 80 mm
thick TIM with 3 W/mK thermal conductivity.
2. Qualified per ECPE Guideline AQG 324.
3. Repetitive rating limited by maximum junction temperature and
transconductance.
4. E based on initial T = 25°C, L = 1 mH, I = 19 A, V = 120 V, V = 18 V.
AS
J
AS
DD
GS
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2023 − Rev. 2
NVXK2KR80WDT/D
NVXK2KR80WDT
THERMAL CHARACTERISTICS SiC MOSFET (Note 1)
Parameter
Thermal Resistance Junction−to−Case (Note 1)
Thermal Resistance Junction−to−Sink (Note 1)
Symbol
Typ
1.41
1.84
Max
1.84
2.26
Unit
°C/W
°C/W
R
θ
JC (MOS)
R
Ψ
JS (MOS)
THERMAL CHARACTERISTICS DIODES (Note 1)
Parameter
Symbol
Value
1.97
2.51
1.61
2.54
Unit
°C/W
°C/W
°C/W
°C/W
SiC Diode (D1−D2) Thermal Resistance Junction−to−Case (Note 1)
SiC Diode (D1−D2) Thermal Resistance Junction−to−Sink (Note 1)
SiC Diode (D3−D6) Thermal Resistance Junction−to−Case (Note 1)
SiC Diode (D3−D6) Thermal Resistance Junction−to−Sink (Note 1)
R
θ
JC (SiC Diode)
R
Ψ
JS (SiC Diode)
R
θ
JC (Si Diode)
R
Ψ
JS (Si Diode)
ELECTRICAL CHARACTERISTICS SiC MOSFET (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
1200
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
I
D
= 1 mA, referenced to 25°C
500
mV/°C
(BR)DSS
/ T
J
Zero Gate Voltage Drain Current
I
V
V
= 0 V
= 1200 V
T = 25°C
100
1
mA
mA
mA
DSS
GS
J
DS
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
I
V
GS
= +25/−15 V, V = 0 V
1
GSS
DS
V
VGS = V , I = 10 mA
1.8
3
4.3
V
GS(TH)
DS
D
Recommended Gate Voltage
V
−5
+20
116
V
GOP
Drain−to−Source On Resistance
R
V
GS
V
GS
V
DS
= 20 V, I = 20 A, T = 25°C
80
150
11
mW
DS(on)
D
J
Drain−to−Source On Resistance
R
= 20 V, I = 20 A, T = 175°C
mW
DS(on)
D
J
Forward Transconductance
g
= 20 V, I = 20 A
S
FS
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
= 0 V, f = 1 MHz, V = 800 V
1154
79
pF
nC
ISS
GS
GS
DS
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C
OSS
C
RSS
7.9
56
Q
V
= −5/20 V, V = 600 V, I = 20 A
DS D
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate−Resistance
Q
10
G(TH)
Q
18
GS
GD
Q
11
R
V
V
= 0 V, f = 1 MHz
1.2
W
G
GS
INDUCTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
t
= −5 / 20 V, V = 800 V,
12
12
ns
d(ON)
GS
DS
I
= 20 A, R = 4.7 W,
D
G
t
r
Inductive load
Turn−Off Delay Time
Fall Time
t
21
d(OFF)
t
f
9
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
135
46
mJ
mJ
mJ
ON
E
OFF
E
181
tot
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2
NVXK2KR80WDT
ELECTRICAL CHARACTERISTICS SiC MOSFET (T = 25°C unless otherwise stated) (continued)
J
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
V
= −5 V, T = 25°C
18
A
A
SD
GS
J
Current (Notes 1, 2)
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
= −5 V, T = 25°C
110
SDM
GS
J
Forward Diode Voltage
V
V
V
= −5 V, I = 10 A, T = 25°C
3.9
16.2
7.6
V
ns
A
SD
GS
SD
J
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Energy
Reverse Recovery Charge
t
= −5 V, dI /dt = 1000 A/ms,
S
= 20 A
RR
GS
I
SD
I
RRM
E
REC
4.1
mJ
nC
Q
61.6
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse test: pulse width ≤300 ms, duty ratio ≤2%.
MAXIMUM RATINGS SiC DIODE (D1−D2) (T = 25°C unless otherwise noted)
J
Parameter
Symbol
Value
Unit
V
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 6)
Continuous Rectified Forward Current @ T < 150°C
V
RRM
1200
E
AS
210
mJ
A
I
F
17
C
Continuous Rectified Forward Current @ T < 75°C
33
C
Non−Repetitive Peak Forward
Surge Current
I
394
A
T
C
T
C
= 25°C, 10 ms
= 150°C, 10 ms
F, Max
161
Non−Repetitive Forward Surge Current (pk) Half−Sine Pulse, t = 8.3 ms
I
78
A
A
p
F, SM
Repetitive Forward Surge Current (pk)
Power Dissipation
Half−Sine Pulse, t = 8.3 ms
I
70
76
p
F, RM
T
C
C
= 25°C
P
W
TOT
TOT
T
= 150°C
P
13
Operating and Storage Temperature Range
T , T
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
6. E of 210 mJ is based on starting T = 25°C, L = 0.5 mH, I = 29 A, V = 50 V.
AS
J
AS
ELECTRICAL CHARACTERISTICS SiC DIODE (D1−D2) (T = 25°C unless otherwise stated)
J
Parameter
Forward Voltage
Symbol
Test Conditions
I = 20 A, T = 25°C
Min
Typ
1.45
1.70
2.00
Max
Unit
V
F
1.75
V
F
J
I = 20 A, T = 125°C
F
J
I = 20 A, T = 175°C
F
J
Reverse Current
I
R
V
R
V
R
V
R
= 1200 V, T = 25°C
200
300
400
mA
J
= 1200 V, T = 125°C
J
= 1200 V, T = 175°C
J
Total Capacitive Charge
Total Capacitance
Q
V = 800 V
120
1220
111
nC
pF
C
C
V
R
V
R
V
R
= 1 V, f = 100 kHz
= 400 V, f = 100 kHz
= 800 V, f = 100 kHz
88
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Si DIODE (D3−D6)
Maximum ratings and electrical characteristics are found in Vishay Data Sheet VS207DM..CCB, Document Number 93888,
Revision: 04−Aug−13. Refer herein for thermal performance only (Figure 22 & Thermal Characteristics Table, p. 2).
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3
NVXK2KR80WDT
TYPICAL CHARACTERISTICS SIC MOSFET
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs.
Drain Current and Gate Voltage
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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4
NVXK2KR80WDT
TYPICAL CHARACTERISTICS SIC MOSFET (CONTINUED)
Figure 7. Gate−to−Source Voltage vs. Total Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
Figure 11. Single Pulse Maximum Power Dissipation
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5
NVXK2KR80WDT
TYPICAL CHARACTERISTICS SIC MOSFET (CONTINUED)
SiC MOSFET
Figure 12. Thermal Response
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6
NVXK2KR80WDT
TYPICAL CHARACTERISTICS SIC DIODE
Figure 13. Forward Characteristics
Figure 14. Reverse Characteristics
Figure 16. Current Derating
Figure 15. Reverse Characteristics
Figure 18. Capacitive Charge vs. Reverse
Voltage
Figure 17. Power Derating
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7
NVXK2KR80WDT
TYPICAL CHARACTERISTICS SIC DIODE (CONTINUED)
Figure 19. Capacitance vs. Reverse Voltage
Figure 20. Capacitance Stored Energy
Figure 21. Junction−to−Case Transient Thermal Response Curve − SiC Diode
Figure 22. Junction−to−Case Transient Thermal Response Curve − Silicon Diode
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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
APM32 AUTOMOTIVE MODULE
CASE MODHL
ISSUE B
DATE 05 APR 2022
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
ZZZ = Lot ID
*This information is generic. Please refer to
AT
Y
W
= Assembly & Test Location
= Year
= Work Week
XXXXXXXXXXXXXXXX
ZZZ ATYWW
NNNNNNN
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
NNN = Serial Number
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON29478H
APM32 AUTOMOTIVE MODULE
PAGE 1 OF 1
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