NVXK2TR40WXT [ONSEMI]

EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series;


型号：	NVXK2TR40WXT
厂家：	ONSEMI
描述：	EliteSiC Power Module for OBC, 40mΩ, 1200V, 27 A, Dual Half-Bridge, in APM32 Series
文件：	总8页 (文件大小：790K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Module – EliteSiC Power

Module for OBC,

Max

I Max

(BR)DSS

DS(on)

1200 V

59 mW @ 20 V

27 A

40ꢀmohm, 1200ꢀV, 27 A,

Dual Half-Bridge,

in APM32 Series

NVXK2TR40WXT

Features

SiC MOSFET H−Bridge Module

• DIP Silicon Carbide H−Bridge Power Module for On−board Charger

(OBC) for xEV Applications

• Creepage and Clearance per IEC 60664−1, IEC 60950−1

• Compact Design for Low Total Module Resistance

• Module Serialization for Full Traceability

• Lead Free, ROHS and UL94V−0 Compliant

• Automotive Qualified per AEC−Q101 and AQG324

Typical Applications

• DC−DC and On−Board Charger in xEV Applications

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

APM32

Parameter

Drain−to−Source Voltage

Symbol

Value

1200

Unit

DSS

ORDERING INFORMATION

Gate−to−Source Voltage

+25/−15

+20/−5

Device

Package

Shipping

Recommended Operation Values of

GSop

Gate−to−Source Voltage, T ≤ 175°C

NVXK2TR40WXT

APM32

(Pb−Free)

10 ea / Tube

Continuous Drain

= 25°C

Current (Notes 1, 2)

Power Dissipation

(Note 1)

319

240

495

Pulsed Drain Current

(Note 3)

= 25°C

= 25°C,

Single Pulse Surge

Drain Current Capability

DSC

t = 10 ms,

= 4.7 W

Operating Junction and Storage

Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode) (Note 2)

Single Pulse Drain–to−Source

Avalanche Energy (Note 4)

338

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Particular conditions specified determine thermal resistance values shown.

Infinite heatsink with T = 100°C for R . For R

assembled to 3 mm thick

aluminum heatsink with infinite cooling bottom surface at 85°C, through 38 mm

thick TIM with 6.5 W/mK thermal conductivity.

2. Qualified per ECPE Guideline AQG 324.

3. Repetitive rating limited by maximum junction temperature and

transconductance.

4. E based on initial T = 25°C, L = 1 mH, I = 26 A, V = 120 V, V = 18 V.

Publication Order Number:

February, 2023 − Rev. 2

NVXK2TR40WXT/D

NVXK2TR40WXT

THERMAL CHARACTERISTICS (Note 1)

Parameter

Thermal Resistance Junction−to−Case (Note 1)

Thermal Resistance Junction−to−Sink (Note 1)

Symbol

Typ

0.37

0.84

Max

0.47

0.95

Unit

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 1 mA

1200

(BR)DSS

Drain−to−Source Breakdown Voltage

Temperature Coefficient

/ T

I = 1 mA, referenced to 25°C

450

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V

= 1200 V

T = 25°C

100

DSS

T = 175°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

= +25/−15 V, V = 0 V

GSS

= V , I = 10 mA

1.8

4.3

+20

GS(TH)

Recommended Gate Voltage

Drain−to−Source On Resistance

Forward Transconductance

−5

GOP

= 20 V, I = 35 A, T = 25°C

DS(on)

= 20 V, I = 35 A, T = 175°C

= 20 V, I = 35 A

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

= 0 V, f = 1 MHz,

= 800 V

1789

139

12.5

106

ISS

Output Capacitance

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

= −5/20 V, V = 600 V,

= 47 A

G(TOT)

GS DS

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Gate−Resistance

G(TH)

= 0 V, f = 1 MHz

INDUCTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

= −5 / 20 V, V = 800 V,

d(ON)

= 47 A, R = 4.7 W,

Rise Time

Inductive load

Turn−Off Delay Time

d(OFF)

Fall Time

Turn−On Switching Loss

Turn−Off Switching Loss

Total Switching Loss

366

200

566

OFF

tot

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−Source Diode Forward

= −5 V, T = 25°C

Current (Note 1)

Pulsed Drain−Source Diode Forward

Current (Note 3)

= −5 V, T = 25°C

240

SDM

Forward Diode Voltage

= −5 V, I = 17.5 A,

3.7

T = 25°C

www.onsemi.com

NVXK2TR40WXT

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated) (continued)

Parameter

DRAIN−SOURCE DIODE CHARACTERISTICS

Reverse Recovery Time

Symbol

Test Conditions

Min

Typ

Max

Unit

= −5 V, dI /dt = 1000 A/ms,

= 17.5 A

Peak Reverse Recovery Current

Charge Time

10.4

12.4

11.6

125

RRM

Discharge Time

Reverse Recovery Charge

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse test: pulse width ≤300 ms, duty ratio ≤2%.

www.onsemi.com

NVXK2TR40WXT

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Normalized On−Resistance vs.

Drain Current and Gate Voltage

Figure 3. On−Resistance Variation with

Figure 4. On−Resistance vs. Gate−to−Source

Temperature

Voltage

Figure 5. Transfer Characteristics

Figure 6. Diode Forward Voltage vs. Current

www.onsemi.com

NVXK2TR40WXT

TYPICAL CHARACTERISTICS (CONTINUED)

Figure 7. Gate−to−Source Voltage vs. Total Charge

Figure 8. Capacitance vs. Drain−to−Source

Voltage

Figure 9. Unclamped Inductive Switching Capability

Figure 10. Maximum Continuous Drain Current

vs. Case Temperature

Figure 11. Single Pulse Maximum Power Dissipation

www.onsemi.com

NVXK2TR40WXT

TYPICAL CHARACTERISTICS (CONTINUED)

Figure 12. Thermal Response

www.onsemi.com

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

APM32 AUTOMOTIVE MODULE

CASE MODHL

ISSUE B

DATE 05 APR 2022

GENERIC

MARKING DIAGRAM*

XXXX = Specific Device Code

ZZZ = Lot ID

*This information is generic. Please refer to

= Assembly & Test Location

= Year

= Work Week

XXXXXXXXXXXXXXXX

ZZZ ATYWW

NNNNNNN

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “G”, may

or may not be present. Some products may

not follow the Generic Marking.

NNN = Serial Number

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON29478H

APM32 AUTOMOTIVE MODULE

PAGE 1 OF 1

onsemi and

are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves

the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular

purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation

special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales



NVXK2TR40WXT [ONSEMI]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E