NXH010P120MNF1PNG [ONSEMI]
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET;
| 型号： | NXH010P120MNF1PNG |
| 厂家： | 
ONSEMI |
| 描述： | SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET |
| 文件： | 总12页 (文件大小：2923K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Silicon Carbide (SiC)
Module – EliteSiC, 10 mohm
SiC M1 MOSFET, 1200 V,
2-PACK Half Bridge
Topology, F1 Package
PIM18 33.8x42.5 (PRESS FIT)
CASE 180BW
Advance Information
NXH010P120MNF1PTNG,
NXH010P120MNF1PNG,
NXH010P120MNF1PTG,
NXH010P120MNF1PG
MARKING DIAGRAM
NXH010P120MNF1z
ATYYWW
NXH010P120MNF1z = Specific Device Code
General Description
z
= PTNG/PNG/PTG/PG
The NXH010P120MNF1 is a power module containing an
10 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1
package.
AT
YYWW
= Assembly & Test Site Code
= Year and Work Week Code
Features
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
• 10 mW/1200 V SiC MOSFET Half Bridge
• Thermistor
• Options With Pre−Applied Thermal Interface Material (TIM) and
Without Pre−Applied TIM
• Press−Fit Pins
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies
• Electric Vehicle Charging Stations
• Industrial Power
Figure 1. NXH010P120MNF1 Schematic Diagram
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
March, 2023 − Rev. P4
NXH010P120MNF1/D
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
PIN CONNECTIONS
Figure 2. Pin Connections
PIN FUNCTION DESCRIPTION
Pin
8
Name
TH1
Description
Thermistor Connection 1
7
TH2
Thermistor Connection 2
1
DC+
DC+
PHASE
PHASE
DC−
S1
DC Positive Bus connection
DC Positive Bus connection
Center point of half bridge
Center point of half bridge
DC Negative Bus connection
Q1 Kelvin Emitter (High side switch)
Q1 Gate (High side switch)
DC Negative Bus connection
Q2 Gate (Low side switch)
Q2 Kelvin Emitter (High side switch)
DC Negative Bus connection
DC Negative Bus connection
DC Positive Bus connection
DC Positive Bus connection
Center point of half bridge
Center point of half bridge
2
13
14
9
3
4
G1
10
15
16
11
12
5
DC−
G2
S2
DC−
DC−
DC+
DC+
PHASE
PHASE
6
17
18
www.onsemi.com
2
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
SIC MOSFET
Drain−Source Voltage
Gate−Source Voltage
V
1200
+25/−15
114
V
V
DSS
V
GS
Continuous Drain Current @ T = 80°C (T = 175°C)
I
D
A
c
J
Pulsed Drain Current (T = 175°C)
I
342
A
J
Dpulse
Maximum Power Dissipation @ T = 80°C (T = 175°C)
P
413
W
°C
°C
c
J
tot
Minimum Operating Junction Temperature
T
JMIN
−40
Maximum Operating Junction Temperature
THERMAL PROPERTIES
T
JMAX
175
Storage Temperature range
T
stg
−40 to 150
°C
INSULATION PROPERTIES
Isolation Test Voltage, t = 1 sec, 60 Hz
Creepage Distance
V
is
4800
12.7
V
RMS
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
Unit
Module Operating Junction Temperature
T
J
−40
150
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SiC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain−Source On Resistance
V
GS
V
GS
V
GS
= 0 V, I = 400 mA
V
(BR)DSS
1200
–
–
–
V
D
= 0 V, V = 1200 V
I
–
–
200
14
mA
mW
DS
DSS
= 20 V, I = 100 A,
R
10.5
D
DS(ON)
T = 25°C
J
V
= 20 V, I = 100 A,
–
–
14.1
14.5
–
–
GS
D
T = 125°C
J
V
GS
= 20 V, I = 100 A,
D
T = 150°C
J
Gate−Source Threshold Voltage
Gate Leakage Current
V
= V , I =40 mA
V
1.8
2.90
–
4.3
500
−
V
nA
W
GS
GS
DS
D
GS(TH)
V
= −10/20 V, V = 0 V
I
−500
DS
GSS
Internal Gate Resistance
Input Capacitance
R
−
–
–
–
–
–
–
–
0.8
G
V
DS
= 800 V, V = 0 V.
C
4707
39
–
pF
GS
ISS
f = 1 MHz
Reverse Transfer Capacitance
Output Capacitance
C
C
–
RSS
OSS
OSS
548
221
454
129
131
–
C
Stored Energy
V
V
= 0 V to 800 V, V = 0 V
E
–
mJ
nC
nC
nC
OSS
DS
GS
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
= 800 V. V = 20 V.
Q
–
DS
GS
G(TOTAL)
I
D
= 100 A
Q
GS
Q
GD
–
–
www.onsemi.com
3
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
ELECTRICAL CHARACTERISTICS (continued)
T = 25°C unless otherwise noted
J
Parameter
SiC MOSFET CHARACTERISTICS
Turn−on Delay Time
Test Conditions
Symbol
Min
Typ
Max
Unit
T = 25°C
t
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
36
16.2
135.2
13
–
–
–
–
–
–
–
–
–
–
–
–
6
–
–
–
ns
J
d(on)
V
V
= 600 V, I = 100 A
DS
GS
D
Rise Time
t
r
= −5 V/18 V, R = 2 W
G
Turn−off Delay Time
t
d(off)
Fall Time
t
f
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Turn−on Delay Time
E
ON
1.47
0.33
30.5
15.2
149
mJ
ns
E
t
OFF
T = 150°C
J
d(on)
V
DS
V
GS
= 600 V, I = 100 A
D
Rise Time
t
r
= −5 V/18 V, R = 2 W
G
Turn−off Delay Time
t
d(off)
Fall Time
t
f
15
Turn−on Switching Loss per Pulse
Turn off Switching Loss per Pulse
Diode Forward Voltage
E
ON
1.77
0.41
3.94
3.42
0.23
0.38
mJ
V
E
OFF
I
= 100 A, T = 25°C
V
SD
D
J
I
= 100 A, T = 150°C
D
J
Thermal Resistance − Chip−to−case
Thermal Resistance − Chip−to−heatsink
M1, M2
R
R
°C/W
°C/W
thJC
thJH
Thermal Resistance − chip−to−
heatsink, Thermal grease,
Thickness = 2 Mil _2%,
A = 2.8 W/mK
THERMISTOR CHARACTERISTICS
Nominal Resistance
Nominal Resistance
Deviation of R25
T = 25°C
R
–
–
5
457
–
–
–
3
–
–
–
–
kW
W
25
T = 100°C
R
100
DR/R
−3
–
%
Power Dissipation
Power Dissipation Constant
B−value
P
50
mW
mW/K
K
D
–
5
B(25/50), tolerance 3%
B(25/100), tolerance 3%
–
3375
3455
B−value
–
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
†
Orderable Part Number
Specific Device Marking
Package Type
Shipping
F1−2PACK: Case 180BW
Press−fit Pins, Ni−Plated DBC
(Pb−Free and Halide−Free)
NXH010P120MNF1PNG
NXH010P120MNF1PNG
28 Units / Blister Tray
F1−2PACK: Case 180BW
Press−fit Pins, Ni−Plated DBC with pre−applied
thermal interface material (TIM)
NXH010P120MNF1PTNG
NXH010P120MNF1PTNG
28 Units / Blister Tray
(Pb−Free and Halide−Free)
F1−2PACK: Case 180BW
Press−fit Pins, Copper DBC
(Pb−Free and Halide−Free)
NXH010P120MNF1PG
NXH010P120MNF1PTG
NXH010P120MNF1PG
NXH010P120MNF1PTG
28 Units / Blister Tray
28 Units / Blister Tray
F1−2PACK: Case 180BW
Press−fit Pins, Copper DBC with pre−applied
thermal interface material (TIM)
(Pb−Free and Halide−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
4
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
Figure 4. MOSFET Typical Output Characteristics
Figure 3. MOSFET Typical Output Characteristics
Figure 6. MOSFET Typical Transfer Characteristics
Figure 5. MOSFET Typical Output Characteristics
Figure 7. Body Diode Forward Characteristic
Figure 8. Gate−to−Source Voltage vs. Total Charge
www.onsemi.com
5
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
TYPICAL CHARACTERISTICS
SIC MOSFET (M1, M2)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance vs. Drain−to−Source Voltage
PULSE ON TIME [s]
Figure 10. SiC Mosfet Junction− to−Case Transient Thermal Impedance
M1
M2
Element #
Rth (K/W)
0.00569
0.01079
0.03005
0.08398
0.09325
Cth (Ws/K)
0.00195
0.00951
0.01813
0.08121
0.11117
Rth (K/W)
0.01290
0.02387
0.04253
0.07199
0.07823
Cth (Ws/K)
0.00461
0.02538
0.02953
0.08994
0.06854
1
2
3
4
5
Figure 11. Table of Cauer Networks−M1, M2
www.onsemi.com
6
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 13. Typical Switching Loss EON vs. RG
Figure 12. Typical Switching Loss EON vs. ID
Figure 15. Typical Switching Loss EOff vs. RG
Figure 14. Typical Switching Loss EOff vs. ID
Figure 17. Typical Turn−On Switching Tdon vs. RG
Figure 16. Typical Turn−On Switching Tdon vs. ID
www.onsemi.com
7
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 18. Typical Turn−Off Switching Tdoff vs. ID
Figure 20. Typical Turn−On Switching Tr vs. ID
Figure 22. Typical Turn−Off Switching Tf vs. ID
Figure 19. Typical Turn−Off Switching Tdoff vs. RG
Figure 21. Typical Turn−On Switching Tr vs. RG
Figure 23. Typical Turn−Off Switching Tf vs. RG
www.onsemi.com
8
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 25. di/dt ON vs. RG
Figure 27. di/dt OFF vs. RG
Figure 29. dv/dt ON vs. RG
Figure 24. di/dt ON vs. ID
Figure 26. di/dt OFF vs. ID
Figure 28. dv/dt ON vs. ID
www.onsemi.com
9
NXH010P120MNF1PTNG, NXH010P120MNF1PNG, NXH010P120MNF1PTG,
NXH010P120MNF1PG
TYPICAL CHARACTERISTICS
M1/M2 MOSFET SWITCHING CHARACTERISTICS
Figure 31. dv/dt OFF vs. RG
Figure 30. dv/dt OFF vs ID
www.onsemi.com
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM18 33.8x42.5 (PRESS FIT)
CASE 180BW
ISSUE B
DATE 30 APR 2021
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXX
ATYYWW
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
XXXXX = Specific Device Code
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON19723H
PIM18 33.8x42.5 (PRESS FIT)
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
NXH010P120MNF1PTG
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET
ONSEMI
NXH010P120MNF1PTNG
SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET
ONSEMI
NXH020U90MNF2PTG
SiC Modules, Vienna Module 900V, 2 x 10 mohm SiC MOSFET, 1200V, 2 x 100A, F2 Package
ONSEMI
©2020 ICPDF网 联系我们和版权申明