NXH020P120MNF1PTG [ONSEMI]

SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET;


型号：	NXH020P120MNF1PTG
厂家：	ONSEMI
描述：	SiC Module, 2-PACK Half Bridge Topology, 1200 V, 20 mohm SiC M1 MOSFET
文件：	总13页 (文件大小：2453K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

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Silicon Carbide (SiC)

Module – EliteSiC, 20 mohm

SiC M1 MOSFET, 1200 V,

2-PACK Half Bridge

Topology, F1 Package

Advance Information

PIM18 33.8x42.5 (PRESS FIT)

NXH020P120MNF1PTG,

NXH020P120MNF1PG

CASE 180BW

MARKING DIAGRAM

The NXH020P120MNF1 is a power module containing an

20 mW/1200 V SiC MOSFET half bridge and a thermistor in an F1

package.

NXH020P120MNF1Pxx

ATYYWW

Features

NXH020P120MNF1PTG= Specific Device Code

NXH020P120MNF1PG = Specific Device Code

• 20 mW/1200 V SiC MOSFET Half Bridge

• Thermistor

= Assembly & Test Site Code

= Year and Work Week Code

YYWW

• Options with Pre−applied Thermal Interface Material (TIM) and

without Pre−applied TIM

• Press−fit Pins

PIN CONNECTIONS

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Electric Vehicle Charging Stations

• Industrial Power

See Pin Function Description for pin names

ORDERING INFORMATION

See detailed ordering and shipping information on

page 4 of this data sheet.

Figure 1. NXH020P120MNF1 Schematic Diagram

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Publication Order Number:

March, 2023 − Rev. P3

NXH020P120MNF1/D

NXH020P120MNF1PTG, NXH020P120MNF1PG

PIN FUNCTION DESCRIPTION

Name

DC+

Description

DC Positive Bus connection

Q1 Kelvin Emitter (High side switch)

Q1 Gate (High side switch)

DC Positive Bus connection

Thermistor Connection 2

DC+

TH2

TH1

Thermistor Connection 1

DC−

PHASE

DC Negative Bus connection

Center point of half bridge

Q2 Gate (Low side switch)

Q2 Kelvin Emitter (High side switch)

Center point of half bridge

PHASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

SiC MOSFET

Drain−Source Voltage

Gate−Source Voltage

1200

+25/−15

DSS

Continuous Drain Current @ T = 80°C (T = 175°C)

Pulsed Drain Current (T = 175°C)

102

Dpulse

Maximum Power Dissipation @ T = 80°C (T = 175°C)

211

°C

tot

Minimum Operating Junction Temperature

JMIN

−40

Maximum Operating Junction Temperature

THERMAL PROPERTIES

JMAX

175

Storage Temperature Range

INSULATION PROPERTIES

Isolation Test Voltage, t = 1 s, 60 Hz

Creepage Distance

−40 to 150

°C

stg

4800

12.7

RMS

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe

Operating parameters.

RECOMMENDED OPERATING RANGES

Rating

Symbol

Min

Max

Unit

Module Operating Junction Temperature

−40

150

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

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NXH020P120MNF1PTG, NXH020P120MNF1PG

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

SIC MOSFET CHARACTERISTICS

Drain−Source Breakdown Voltage

Zero Gate Voltage Drain Current

Drain−Source On Resistance

= 0 V, I = 400 mA

(BR)DSS

1200

–

−

–

−

200

–

= 0 V, V = 1200 V

DSS

= 20 V, I = 50 A, T = 25°C

–

DS(ON)

= 20 V, I = 50 A, T = 125°C

–

= 20 V, I = 50 A, T = 150°C

–

Gate−Source Threshold Voltage

Gate Leakage Current

= V , I = 20 mA

1.8

−500

−

2.81

–

4.3

500

−

GS(TH)

= −10/20 V, V = 0 V

GSS

Internal Gate Resistance

Input Capacitance

1.1

= 800 V, V = 0 V, f = 1 MHz

–

2420

–

ISS

Reverse Transfer Capacitance

Output Capacitance

–

RSS

OSS

–

193

124

213.5

–

Stored Energy

= 0 V to 800 V, V = 0 V

–

OSS

= 800 V, V = 20 V, I = 50 A

Total Gate Charge

–

G(TOTAL)

Gate−Source Charge

Gate−Drain Charge

Turn−on Delay Time

Rise Time

–

61.2

–

T = 25°C

–

d(on)

= 600 V, I = 50 A

–

8.8

–

= −5 V/18 V, R = 2.7 W

Turn−off Delay Time

Fall Time

–

105

8.4

–

d(off)

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Turn−on Delay Time

Rise Time

–

0.38

0.16

40.5

8.0

–

OFF

T = 150°C

–

d(on)

= 600 V, I = 50 A

–

= −5 V/18 V , R = 2.7 W

Turn−off Delay Time

Fall Time

–

113

9.1

–

d(off)

–

Turn−on Switching Loss per Pulse

Turn off Switching Loss per Pulse

Diode Forward Voltage

–

0.49

0.16

3.93

3.39

0.4495

0.7971

–

OFF

–

= 50 A, T = 25°C

–

= 50 A, T = 150°C

–

Thermal Resistance − Chip−to−case M1, M2

–

°C/W

thJC

thJH

Thermal Resistance −

Chip−to−heatsink

Thermal grease, Thickness =

2 Mil _2%, A = 2.8 W/mK

–

THERMISTOR CHARACTERISTICS

Nominal Resistance

Deviation of R25

T = 25°C

–

457

–

T = 100°C

100

DR/R

−3

–

Power Dissipation

Power Dissipation Constant

B−value

mW/K

–

B(25/50), tolerance 3%

B(25/100), tolerance 3%

–

3375

3455

B−value

–

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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NXH020P120MNF1PTG, NXH020P120MNF1PG

ORDERING INFORMATION

Orderable Part Number

NXH020P120MNF1PG

Marking

Package

Shipping

NXH020P120MNF1PG

F1−2PACK: Case 180BW

Press−fit Pins

28 Units / Blister Tray

(Pb−Free and Halide−Free)

NXH020P120MNF1PTG

F1−2PACK: Case 180BW

Press−fit Pins with pre−applied

thermal interface material (TIM)

(Pb−Free and Halide−Free)

28 Units / Blister Tray

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

SIC MOSFET (M1, M2)

Figure 2. MOSFET Typical Output

Figure 3. MOSFET Typical Output

Characteristics

Figure 4. MOSFET Typical Output

Characteristics

Figure 5. MOSFET Typical Transfer

Characteristics

Figure 6. Body Diode Forward Characteristics

Figure 7. Gate−to−Source Voltage vs. Total

Charge

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

SIC MOSFET (M1, M2)

Figure 8. Capacitance vs. Drain−to−Source Voltage

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

M1/M2 MOSFET SWITCHING CHARACTERISTICS

Figure 9. Typical Switching Loss Eon vs. ID

Figure 10. Typical Switching Loss Eon vs. R_G

Figure 11. Typical Switching Loss Eoff vs. ID

Figure 12. Typical Switching Loss Eoff vs. R_G

Figure 13. Typical Turn−On Switching Tdon vs. ID

Figure 14. Typical Turn−On Switching Tdon vs. R_G

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

M1/M2 MOSFET SWITCHING CHARACTERISTICS

Figure 15. Typical Turn−Off Switching Tdoff vs. ID

Figure 16. Typical Turn−Off Switching Tdoff vs. R_G

Figure 18. Typical Turn−On Switching Tr vs. R_G

Figure 20. Typical Turn−Off Switching Tf vs. R_G

Figure 17. Typical Turn−On Switching Tr vs. ID

Figure 19. Typical Turn−Off Switching Tf vs. ID

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

M1/M2 MOSFET SWITCHING CHARACTERISTICS

Figure 21. di/dt ON vs. ID

Figure 22. di/dt ON vs. R_G

Figure 24. di/dt OFF vs. R_G

Figure 26. dv/dt ON vs. R_G

Figure 23. di/dt OFF vs. ID

Figure 25. dv/dt ON vs. ID

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

M1/M2 MOSFET SWITCHING CHARACTERISTICS

Figure 27. dv/dt OFF vs. ID

Figure 28. dv/dt OFF vs. R_G

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NXH020P120MNF1PTG, NXH020P120MNF1PG

TYPICAL CHARACTERISTICS

SIC MOSFET (M1/M2)

Figure 29. MOSFET Junction−to−Case Transient Thermal

Impedance

Table 1. FOSTER NETWORKS − M1, M2

Foster

Element #

Rth (K/W)

0.017325

0.022329

0.016565

0.041616

0.338223

Cth (Ws/K)

0.008638

0.043836

0.107000

0.125888

0.099402

Rth (K/W)

0.026614

0.014274

0.006208

0.075096

0.338851

Cth (Ws/K)

0.005297

0.064284

0.315671

0.078283

0.124492

Table 2. CAUER NETWORKS − M1, M2

Cauer

Element #

Rth (K/W)

0.034247

0.073342

0.106345

0.100786

0.121340

Cth (Ws/K)

0.006027

0.018048

0.041141

0.040901

0.076490

Rth (K/W)

0.038327

0.072292

0.118744

0.069379

0.162299

Cth (Ws/K)

0.004380

0.025045

0.030910

0.066961

0.074739

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

PIM18 33.8x42.5 (PRESS FIT)

CASE 180BW

ISSUE B

DATE 30 APR 2021

GENERIC

MARKING DIAGRAM*

XXXXXXXXXXXXXXXXXXXXXX

ATYYWW

*This information is generic. Please refer to device data

sheet for actual part marking. Pb−Free indicator, “G” or

microdot “G”, may or may not be present. Some products

may not follow the Generic Marking.

XXXXX = Specific Device Code

= Assembly & Test Site Code

YYWW = Year and Work Week Code

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON19723H

PIM18 33.8x42.5 (PRESS FIT)

PAGE 1 OF 1

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NXH020P120MNF1PTG [ONSEMI]

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