NXH160T120L2Q1PG [ONSEMI]
功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A;
| 型号： | NXH160T120L2Q1PG |
| 厂家： | 
ONSEMI |
| 描述： | 功率集成模块 (PIM)，IGBT 1200 V，160 A 和 650 V，100 A 双极性晶体管 |
| 文件： | 总17页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NXH160T120L2Q1PG,
NXH160T120L2Q1SG
Q1PACK Module
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes.
Features
www.onsemi.com
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Module Design Offers High Power Density
• Low Inductive Layout
PACKAGE PICTURE
• Q1PACK Package with Press−Fit and Solder Pins
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
Q1PACK
Q1PACK
CASE 180AD
PRESS FIT
CASE 180AQ
SOLDER PINS
DEVICE MARKING
NXH160T120L2Q1xG
ATYYWW
SCHEMATIC
17,18,19,20
D5
x
= P or S
G
AT
= Pb−Free Package
= Assembly & Test Site Code
T1
D1
21
22
YYWW = Year and Work Week Code
D2
T2
14 13
D7
D6
15,16
7,8
23,24,25,26
PIN ASSIGNMENTS
10
9
T3
D3
27,28,29,30
D8
T4
D4
1
2
11
12
NTC
3,4,5,6
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2018 − Rev. 2
NXH160T120L2Q1/D
NXH160T120L2Q1PG, NXH160T120L2Q1SG
Table 1. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
HALFBRIDGE IGBT INVERSE DIODE (D1, D4)
Peak Repetitive Reverse Voltage
V
1200
20
V
A
A
RRM
Forward Current, DC @ T = 80°C
I
F
h
Repetitive Peak Forward Current
I
80
FRM
T
pulse
limited by T
jmax
Power Dissipation per Diode
T = T
P
tot
51
W
T = 80°C
h
j
jmax
Maximum Junction Temperature
HALFBRIDGE IGBT (T1, T4)
Collector−emitter voltage
T
150
°C
J
V
I
1200
140
480
280
V
A
CES
Collector current @ T = 80°C
I
C
h
Pulsed Collector Current, T
Limited by T
A
pulse
jmax
CM
Power Dissipation per IGBT
T = T
P
tot
W
T = 80°C
h
j
jmax
Gate−emitter voltage
V
20
10
V
GE
Short Circuit Withstand Time
T
SC
ms
V
GE
= 15 V, V = 600 V, T ≤ 150°C
CE J
Maximum Junction Temperature
NP DIODE (D6, D7)
T
J
150
°C
Peak Repetitive Reverse Voltage
V
650
58
V
A
RRM
Forward Current, DC @ T = 80°C
I
F
h
Repetitive Peak Forward Current, T
limited by T
I
FRM
200
89
A
pulse
Jmax
Power Dissipation Per Diode
P
tot
W
T = T
T = 80°C
h
j
jmax
Maximum Junction Temperature
NP IGBT (T2, T3)
T
J
150
°C
Collector−emitter voltage
V
650
83
V
A
CES
Collector current
@ T = 80°C
I
C
h
Pulsed collector current, T
limited by T
I
235
117
A
pulse
Jmax
CM
Power Dissipation Per IGBT
T = T T = 80°C
P
W
tot
j
jmax
h
Gate−emitter voltage
V
20
5
V
GE
Short Circuit Withstand Time
T
ms
sc
V
GE
= 15 V, V = 400 V, T ≤ 150°C
CE J
Maximum Junction Temperature
NP INVERSE DIODE (D2, D3)
Peak Repetitive Reverse Voltage
T
150
°C
J
V
650
17
V
A
RRM
Forward Current, DC @ T = 80°C
I
F
h
Repetitive Peak Forward Current, T
limited by T
I
FRM
68
A
pulse
Jmax
Power Dissipation Per Diode
P
tot
28
W
T = T
T = 80°C
h
j
jmax
Maximum Junction Temperature
HALFBRIDGE DIODE (D5, D8)
Peak Repetitive Reverse Voltage
T
150
°C
J
V
1200
45
V
A
RRM
Forward Current, DC @ T = 80°C (per diode)
I
F
h
Repetitive Peak Forward Current, T
limited by T
I
FRM
180
78
A
pulse
Jmax
Power Dissipation Per Diode
P
tot
W
T = T
T = 80°C
h
j
jmax
www.onsemi.com
2
NXH160T120L2Q1PG, NXH160T120L2Q1SG
Table 1. ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
HALFBRIDGE DIODE (D5, D8)
Junction Temperature
T
J
150
°C
THERMAL PROPERTIES
Operating Temperature under switching condition
Storage Temperature range
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz/50 Hz
Creepage distance
T
−40 to (T
−25)
°C
°C
VJ OP
jmax
T
stg
−40 to 125
V
is
3000
12.7
8.06
V
RMS
mm
Clearance
mm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALFBRIDGE IGBT INVERSE DIODE (D1, D4) CHARACTERISTICS
Forward voltage
I = 7 A, T = 25°C
V
F
–
–
1.46
1.49
2.7
–
V
F
j
I = 7 A, T = 125°C
F
j
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 2 Mil 2%, l = 1 W/mK
1.864
°C/W
R
thJH
HALFBRIDGE IGBT (T1, T4) CHARACTERISTICS
Collector−emitter saturation voltage
V
GE
= 15 V, I = 160 A, T = 25°C
V
V
–
–
2.06
2.10
2.50
–
V
GE
C
j
CE(sat)
V
= 15 V, I = 160 A, T = 125°C
C j
Gate−emitter threshold voltage
Collector−emitter cutoff current
Gate leakage current
Turn−on delay time
V
GE
= V , I = 6 mA
5.0
–
5.80
–
6.50
800
800
–
V
CE
C
GE(TH)
V
GE
= 0 V, V = 1200 V
I
mA
nA
ns
CE
CES
V
GE
= 20 V, V = 0 V
I
–
–
CE
GES
T = 125°C
j
t
–
55
d(on)
V
V
= 350 V, I = 100 A
= 15 V, R = 4 W
G
CE
C
Rise time
t
–
50
–
r
GE
Turn−off delay time
t
–
430
105
2.73
3.58
38164
644
784
1664
0.337
–
d(off)
Fall time
t
–
–
f
Turn on switching loss
Turn off switching loss
Input capacitance
E
on
E
off
–
–
mJ
pF
–
–
V
=25 V. V = 0 V. f = 10 kHz
C
ies
oes
–
–
CE
GE
Output capacitance
C
–
–
Reverse transfer capacitance
Gate charge total
C
–
–
res
V
= 600 V, I = 160 A, V = 15 V
Q
g
–
–
nC
CE
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease,
R
°C/W
thJH
Thickness = 2 Mil 2%, l = 1 W/mK
NP DIODE (D6, D7) CHARACTERISTICS
Forward voltage
V
GE
= 0 V, I = 150 A, T = 25°C
V
F
–
–
2.15
2.36
2.60
−
V
GE
F
j
V
= 0 V, I = 150 A, T = 125°C
F
j
Reverse leakage current
V
= 650 V, V = 0 V
Ir
–
–
–
–
–
–
–
−
200
–
mA
ns
CE
GE
Reverse recovery time
T = 125°C
trr
Qrr
225
j
V
CE
= 350 V, I = 100 A
C
Reverse recovery charge
6.15
85
–
mC
V
= 15 V, R = 4 W
G
GE
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
Irrm
–
A
di/dtmax
Err
1315
1.336
1.07
–
A/ms
mJ
–
Thermal Resistance − chip−to−heatsink
Thermal grease,
RthJH
–
°C/W
Thickness = 2 Mil 2%, l = 1 W/mK
www.onsemi.com
3
NXH160T120L2Q1PG, NXH160T120L2Q1SG
Table 2. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
NP IGBT (T2, T3)
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector−emitter saturation voltage
V
CE
= 15 V, I = 150 A, T = 25°C
V
V
–
–
1.65
1.84
2.0
–
V
CE
C
j
CE(sat)
V
= 15 V, I = 150 A, T = 125°C
C j
Gate−emitter threshold voltage
Collector−emitter cutoff current
Gate leakage current
Turn−on delay time
V
GE
= V , I = 8 mA
5.0
–
6.10
–
6.90
400
800
–
V
CE
C
GE(TH)
V
GE
= 0 V, V = 650 V
I
mA
nA
ns
CE
CES
V
GE
= 20 V, V = 0 V
I
–
–
CE
GES
T = 125°C
j
t
–
46
d(on)
V
V
= 350 V, I = 100 A
= 15 V, R = 4 W
G
CE
C
Rise time
t
–
48
–
r
GE
Turn−off delay time
t
–
250
105
1.245
2.525
19380
570
496
790
0.81
–
d(off)
Fall time
t
–
–
f
Turn on switching loss
Turn off switching loss
Input capacitance
E
on
E
off
–
–
mJ
pF
–
–
V
= 25 V, V = 0 V, f = 10 kHz
C
ies
oes
–
–
CE
GE
Output capacitance
C
–
–
Reverse transfer capacitance
Gate charge total
C
–
–
res
V
CE
= 480 V, I = 150 A, V = 15 V
Q
g
–
–
nC
C
GE
Thermal Resistance − chip−to−heatsink
Thermal grease,
R
–
–
°C/W
thJH
Thickness = 2 Mil 2%, l = 1 W/mK
NP INVERSE DIODE (D2, D3)
Forward voltage
V
GE
= 0 V, I = 15 A, T = 25°C
V
F
–
–
1.60
1.59
2.20
–
V
GE
F
j
V
= 0 V, I = 15 A, T = 125°C
F j
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 2 Mil 2%, l = 1 W/mK
R
3.43
°C/W
thJH
HALFBRIDGE DIODE (D5, D8)
Forward voltage
V
GE
= 0 V, I = 150 A, T = 25°C
V
F
–
–
2.50
2.80
3.50
–
V
GE
F
j
V
= 0 V, I = 150 A, T = 125°C
F j
Reverse leakage current
V
= 1200 V, V = 0 V
Ir
–
–
–
–
–
–
–
−
200
–
mA
ns
CE
GE
Reverse recovery time
T = 125°C
trr
Qrr
405
j
V
V
= 350 V, I = 100 A
CE
C
Reverse recovery charge
15.5
220
–
mC
= 15 V, R = 4 W
G
GE
Peak reverse recovery current
Peak rate of fall of recovery current
Reverse recovery energy
Irrm
–
A
di/dtmax
Err
5440
5.225
1.213
–
A/ms
mJ
–
Thermal Resistance − chip−to−heatsink
Thermal grease,
Thickness = 2 Mil 2%, l = 1 W/mK
RthJH
–
°C/W
THERMISTOR CHARACTERISTICS
Nominal resistance
Nominal resistance
Deviation of R25
R
−
−
22
1486
−
−
−
5
−
−
−
−
kW
W
25
T = 100°C
R
100
DR/R
−5
−
%
Power dissipation
Power dissipation constant
B−value
P
200
2
mW
mW/K
K
D
−
B(25/50), tol 3%
B(25/100), tol 3%
−
3950
3998
B−value
−
K
www.onsemi.com
4
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT FORWARD DIODE
300
300
250
200
150
100
V
GE
= 17 V − 11 V
V
GE
= 17 V − 11 V
T = 125°C
T = 25°C
J
J
250
200
150
100
10 V
10 V
9 V
8 V
9 V
8 V
50
0
50
0
7 V
7 V
0
0
0
1
2
3
4
5
0
0
0
1
2
3
4
5
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
CE
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
100
90
80
70
60
50
40
30
20
300
250
200
150
100
T = 125°C
J
T = 25°C
J
25°C
125°C
50
0
10
0
2
4
6
8
10
12
1
2
3
4
5
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 3. Typical Transfer Characteristics
Figure 4. Diode Forward Characteristics
10,000
8000
6000
4000
10,000
8000
6000
4000
E
on
V
= 15 V
V
GE
= 15 V
GE
T = 125°C
T = 125°C
J
J
V
I
= 350 V
V
CE
= 350 V
CE
= 100 A
RG = 4 W
C
E
E
off
E
off
on
2000
0
2000
0
20 40 60
80 100 120 140 160 180 200
IC (A)
5
10
15
20
RG (W)
Figure 5. Typical Switching Loss vs. IC
Figure 6. Typical Switching Loss vs. RG
www.onsemi.com
5
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT FORWARD DIODE
6000
6000
5000
4000
3000
2000
V
= 15 V
GE
T = 125°C
J
V
GE
= 15 V
5000
4000
3000
2000
V
CE
= 350 V
T = 125°C
J
RG = 4 W
V
CE
= 350 V
I
C
= 100 A
1000
0
1000
0
0
0
0
50
100
150
200
0
0
0
5
10
15
20
20
20
IC (A)
RG (W)
Figure 7. Typical Reverse Recovery Energy
Loss vs. IC
Figure 8. Typical Reverse Recovery Energy
Loss vs. RG
450
400
350
300
250
200
150
100
1200
1000
V
= 15 V
T = 125°C
= 350 V
= 100 A
GE
t
d(off)
J
V
CE
t
d(off)
I
C
800
600
400
V
= 15 V
GE
T = 125°C
J
V
= 350 V
CE
RG = 4 W
t
f
t
d(on)
t
r
200
0
t
d(on)
50
0
t
f
t
r
20 40 60
80 100 120 140 160 180 200
5
10
15
RG (W)
RG (W)
Figure 9. Typical Switching Time vs. IC
Figure 10. Typical Switching Time vs. RG
300
250
200
150
100
600
500
400
300
200
V
= 15 V
T = 125°C
= 350 V
= 100 A
GE
J
V
CE
I
C
V
= 15 V
GE
T = 125°C
J
V
= 350 V
CE
100
0
50
0
RG = 4 W
20 40
60 80 100 120 140 160 180 200
IC (A)
5
10
15
RG (W)
Figure 11. Typical Reverse Recovery Time vs.
IC
Figure 12. Typical Reverse Recovery Time vs.
RG
www.onsemi.com
6
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT FORWARD DIODE
12
10
8
V = 15 V
GE
V
= 15 V
GE
T = 125°C
10
8
T = 125°C
J
J
V = 350 V
V
CE
= 350 V
CE
I
C
= 100 A
RG = 4 W
6
6
4
4
2
0
2
0
0
0
0
20 40 60
80 100 120 140 160 180 200
IC (A)
0
0
0
5
10
15
20
20
20
RG (W)
Figure 13. Typical Reverse Recovery Charge
vs. IC
Figure 14. Typical Reverse Recovery Charge
vs. RG
210
180
150
120
90
150
120
90
V
GE
= 15 V
V
= 15 V
T = 125°C
= 350 V
= 100 A
GE
T = 125°C
J
J
V
CE
= 350 V
V
CE
RG = 4 W
I
C
60
60
30
0
30
0
20 40 60
80 100 120 140 160 180 200
IC (A)
5
10
15
RG (W)
Figure 15. Typical Reverse Recovery Current
vs. IC
Figure 16. Typical Reverse Recovery Current
vs. RG
4000
3500
3000
5000
4000
3000
2000
V
GE
= 15 V
V
= 15 V
T = 125°C
= 350 V
= 100 A
GE
T = 125°C
J
J
V
CE
= 350 V
V
CE
RG = 4 W
I
C
2500
2000
1500
1000
1000
0
500
0
20 40 60
80 100 120 140 160 180 200
IC (A)
5
10
15
RG (W)
Figure 17. Typical di/dt vs. IC
Figure 18. Typical di/dt vs. RG
www.onsemi.com
7
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT FORWARD DIODE
1E+00
DUT = 50%
20%
1E−01
1E−02
1E−03
1E−04
10%
5%
2%
1E−05
1E−06
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
ON−PULSE WIDTH (s)
Figure 19. Transient Thermal Impedance (Half Bridge IGBT)
1E+01
1E+00
1E−01
DUT = 50%
20%
10%
5%
2%
1E−02
1E−03
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
ON−PULSE WIDTH (s)
Figure 20. Transient Thermal Impedance (Neutral Point Forward Diode)
1000
100
10
16
50 ms
14
100 ms
600 V
12
1 ms
10
8
6
1
Single Nonrepetitive
dc operation
Pulse T = 25°C
C
4
Curves must be derated
linearly with increase in
temperature
0.1
2
0
0.01
1
10
100
1000
10,000
0
300
600
900
1200
1500 1800
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 21. Safe Operating Area
Figure 22. Gate Voltage vs. Gate Charge
www.onsemi.com
8
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE FORWARD DIODE
400
400
350
300
V
= 17 V − 13 V
V
= 17 V − 13 V
GE
GE
12 V
12 V
11 V
350
300
250
200
150
100
T = 25°C
J
T = 125°C
250
200
150
100
11 V
10 V
J
10 V
9 V
9 V
8 V
8 V
7 V
50
0
50
0
7 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Typical Output Characteristics
Figure 24. Typical Output Characteristics
100
90
80
70
60
50
40
30
20
180
150
120
90
25°C
125°C
T = 125°C
T = 25°C
J
J
60
30
0
10
0
0
2
4
6
8
10
12
0
1
2
3
4
V
GE
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
Figure 25. Typical Transfer Characteristics
Figure 26. Diode Forward Characteristics
6000
5000
4000
3000
2000
7000
6000
5000
4000
3000
2000
V
V
= 350 V
= 15 V
= 100 A
CE
V
V
R
= 350 V
= 15 V
= 4 W
CE
E
on
GE
GE
I
C
E
G
off
T = 125°C
J
T = 125°C
J
E
off
E
on
1000
0
1000
0
0
20 40
60
80 100 120 140 160 180 200
IC (A)
0
5
10
15
20
RG (W)
Figure 27. Typical Switching Loss vs. IC
Figure 28. Typical Switching Loss vs. RG
www.onsemi.com
9
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE FORWARD DIODE
8000
8000
7000
6000
5000
4000
3000
2000
V
V
I
= 350 V
= 15 V
= 100 A
V
V
R
= 350 V
= 15 V
= 4 W
CE
CE
7000
6000
5000
4000
3000
2000
GE
GE
C
G
T = 125°C
J
T = 125°C
J
1000
0
1000
0
0
20 40 60
80 100 120 140 160 180 200
IC (A)
0
5
10
15
20
RG (W)
Figure 29. Typical Reverse Recovery Energy
Loss vs. IC
Figure 30. Typical Reverse Recovery Energy
Loss vs. RG
300
250
200
150
100
500
450
400
350
300
250
200
150
100
t
V
= 15 V
d(off)
GE
T = 125°C
J
t
d(off)
V
CE
= 350 V
= 100 A
I
C
V
= 15 V
GE
T = 125°C
J
V
CE
= 350 V
RG = 4 W
t
f
t
r
t
d(on)
t
t
f
d(on)
50
0
50
0
t
r
0
20 40 60 80 100 120 140 160 180 200
IC (A)
0
5
10
15
20
RG (W)
Figure 31. Typical Switching Time vs. IC
Figure 32. Typical Switching Time vs. RG
500
400
300
200
500
400
300
200
V
= 15 V
GE
V
= 15 V
GE
T = 125°C
J
T = 125°C
J
V
CE
= 350 V
= 100 A
100
0
100
0
V
CE
= 350 V
I
C
RG = 4 W
0
50
100
150
200
0
5
10
15
20
IC (A)
RG (W)
Figure 33. Half Bridge Forward Diode Typical
Reverse Recovery Time vs. IC
Figure 34. Half Bridge Forward Diode Typical
Reverse Recovery Time vs. RG
www.onsemi.com
10
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE FORWARD DIODE
30
20
18
16
14
12
10
8
V
= 15 V
GE
T = 125°C
J
25
20
15
10
V
CE
= 350 V
RG = 4 W
V
GE
= 15 V
6
T = 125°C
J
4
V
I
= 350 V
= 100 A
5
0
CE
2
0
C
0
0
0
20 40 60 80 100 120 140 160 180 200
IC (A)
0
0
0
5
10
15
20
20
20
RG (W)
Figure 35. Half Bridge Forward Diode Typical
Reverse Recovery Charge vs. IC
Figure 36. Half Bridge Forward Diode Typical
Reverse Recovery Charge vs. RG
500
400
300
200
500
400
300
V
= 15 V
V
GE
= 15 V
GE
T = 125°C
T = 125°C
J
J
V
= 350 V
V = 350 V
CE
CE
I
C
= 100 A
RG = 4 W
200
100
0
100
0
20 40 60
80 100 120 140 160 180 200
IC (A)
5
10
15
RG (W)
Figure 37. Typical Reverse Recovery Current
vs. IC
Figure 38. Typical Reverse Recovery Current
vs. RG
10,000
8000
6000
4000
10,000
8000
6000
4000
V
GE
= 15 V
V
GE
= 15 V
T = 125°C
T = 125°C
J
J
V
I
= 350 V
= 100 A
V
CE
= 350 V
CE
RG = 4 W
C
2000
0
2000
0
1
2
3
4
5
6
7
8
5
10
15
IC (A)
RG (W)
Figure 39. Typical di/dt vs. IC
Figure 40. Typical di/dt vs. RG
www.onsemi.com
11
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE FORWARD DIODE
1E+00
DUT = 50%
20%
10%
1E−01
1E−02
1E−03
5%
2%
1E−04
1E−05
Single Pulse
1E−05
1E−06
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
ON−PULSE WIDTH (s)
Figure 41. Transient Thermal Impedance (Neutral Point IGBT)
1E+01
1E+00
1E−01
DUT = 50%
20%
10%
5%
2%
1E−02
1E−03
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
ON−PULSE WIDTH (s)
Figure 42. Transient Thermal Impedance (Half Bridge Forward Diode)
1000
100
10
16
50 ms
14
100 ms
12
480 V
1 ms
10
8
dc operation
1
6
Single Nonrepetitive
Pulse T = 25°C
C
4
Curves must be derated
linearly with increase
in temperature
0.1
2
0
0.01
1
10
100
1000
0
100 200 300 400 500 600 700 800 900
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 43. Safe Operating Area
Figure 44. Gate Voltage vs. Gate Charge
www.onsemi.com
12
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − HALF BRIDGE INVERSE DIODE
1E+01
1E+00
1E−01
DUT = 50%
20%
10%
5%
2%
1E−02
1E−03
Single Pulse
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
ON−PULSE WIDTH (s)
Figure 45. Transient Thermal Impedance
25
20
15
10
25°C
125°C
5
0
0
1
2
3
4
V , FORWARD VOLTAGE (V)
F
Figure 46. Diode Forward Characteristics
www.onsemi.com
13
NXH160T120L2Q1PG, NXH160T120L2Q1SG
TYPICAL CHARACTERISTICS − NEUTRAL POINT INVERSE DIODE
25
20
15
10
5
125°C
25°C
0
0
1
2
3
4
V , FORWARD VOLTAGE (V)
F
Figure 47. Diode Forward Characteristics
TYPICAL CHARACTERISTICS − THERMISTOR
24K
20K
16K
12K
8K
4K
0
25
45
65
85
105
125
TEMPERATURE (°C)
Figure 48. Thermistor Characteristics
ORDERING INFORMATION
Orderable Part Number
Package
Shipping
Q1PACK − Case 180AD
(Pb−Free and Halide−Free)
NXH160T120L2Q1PG (Press Fit)
21 Units / Blister Tray
Q1PACK − Case 180AQ
(Pb−Free and Halide−Free)
NXH160T120L2Q1SG (Solder Pin)
21 Units / Blister Tray
www.onsemi.com
14
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM30, 71x37.4
CASE 180AD
ISSUE E
DATE 28 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON07115G
PIM30 71X37.4 (PRESS FIT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM30, 71x37.4
CASE 180AQ
ISSUE A
DATE 25 JUN 2018
SIDE VIEW
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW = Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON86769G
PIM30, 71x37.4
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
©2020 ICPDF网 联系我们和版权申明