NXH200T120H3Q2F2STG [ONSEMI]
Si/SiC Hybrid Module, Split T-Type NPC inverter ;
| 型号： | NXH200T120H3Q2F2STG |
| 厂家： | 
ONSEMI |
| 描述： | Si/SiC Hybrid Module, Split T-Type NPC inverter PC |
| 文件： | 总20页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Si/SiC Hybrid Module –
EliteSiC, Split T-Type NPC
Inverter, Q2 Package
NXH200T120H3Q2F2SG,
NXH200T120H3Q2F2STG
The NXH200T120H3Q2F2SG is a power module containing a split
T−type neutral point clamped three−level inverter. The integrated field
stop trench IGBTs and SiC Diodes provide lower conduction losses
and switching losses, enabling designers to achieve high efficiency
and superior reliability. NXH200T120H3Q2F2STG is Pre−applied
Thermal Interface Material (TIM) module.
PIM56, 93x47 (SOLDER PIN)
CASE 180AK
MARKING DIAGRAM
NXH200T120H3Q2F2Sxx
ATYYWW
Features
• Split T−type Neutral Point Clamped Three−level Inverter Module
• 1200 V Ultra Field Stop IGBTs & 650 V FS4 IGBTs
• 650 V SiC Diodes
NXH200T120H3Q2F2SG,
NXH200T120H3Q2F2STG= Device Code
YYWW
= Year and Work Week
Code
A
T
G
= Assembly Site Code
= Test Side Code
= Pb−Free Package
• Low Inductive Layout
• Solderable Pins
• Thermistor
• Pre−applied Thermal Interface Material (TIM)
PIN CONNECTIONS
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Figure 1. NXH200T120H3Q2F2SG Schematic Diagram
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
NXH200T120H3Q2F2/D
March, 2023 − Rev. 4
NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
Symbol
Value
Unit
HALF BRIDGE IGBT
Collector−Emitter Voltage
Gate−Emitter Voltage
1200
20
V
V
A
VCES
VGE
IC
Continuous Collector Current @ T = 25_C
Continuous Collector Current @ T = 80_C ( T = 175_C)
Pulsed Collector Current (T = 175_C)
Maximum Power Dissipation @ T = 80_C (T = 175_C)
330
256
768
679
−40
175
C
C
J
A
ICpulse
Ptot
J
W
C
J
_C
_C
Minimum Operating Junction Temperature
TJMIN
TJMAX
Maximum Operating Junction Temperature
NEUTRAL POINT IGBT
Collector−Emitter Voltage
650
20
V
V
VCES
VGE
Gate−Emitter Voltage
Continuous Collector Current @ T = 80_C (T = 175_C)
IC
128
384
264
−40
175
A
C
J
Pulsed Collector Current (T = 175_C)
A
ICpulse
Ptot
J
Maximum Power Dissipation @ T = 80_C (T = 175_C)
W
_C
_C
C
J
Minimum Operating Junction Temperature
TJMIN
TJMAX
Maximum Operating Junction Temperature
HALF BRIDGE FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
1200
94
V
A
VRRM
IF
Continuous Forward Current @ T = 80_C (T = 175_C)
C
J
Repetitive Peak Forward Current (T = 175_C, t limited by T
)
)
)
282
232
−40
175
A
IFRM
Ptot
J
p
Jmax
Jmax
Jmax
Maximum Power Dissipation @ T = 80_C (T = 175_C)
W
_C
_C
C
J
Minimum Operating Junction Temperature
TJMIN
TJMAX
Maximum Operating Junction Temperature
HALF BRIDGE INVERSE DIODE
Peak Repetitive Reverse Voltage
1200
18
V
A
VRRM
IF
Continuous Forward Current @ T = 80_C (T = 175_C)
C
J
Repetitive Peak Forward Current (T = 175_C, t limited by T
54
A
IFRM
Ptot
J
p
Maximum Power Dissipation @ T = 80_C (T = 175_C)
62
W
_C
_C
C
J
Minimum Operating Junction Temperature
−40
175
TJMIN
TJMAX
Maximum Operating Junction Temperature
NEUTRAL POINT FREEWHEEL DIODE
Peak Repetitive Reverse Voltage
650
75
V
A
VRRM
IF
Continuous Forward Current @ T = 80_C (T = 175_C)
C
J
Repetitive Peak Forward Current (T = 175_C, t limited by T
225
216
−40
175
A
IFRM
Ptot
J
p
Maximum Power Dissipation @ T = 80_C (T = 175_C)
W
_C
_C
C
J
Minimum Operating Junction Temperature
TJMIN
TJMAX
Maximum Operating Junction Temperature
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25°C unless otherwise noted
J
Rating
Symbol
Value
Unit
NEUTRAL POINT INVERSE DIODE
Peak Repetitive Reverse Voltage
650
36
V
A
VRRM
IF
Continuous Forward Current @ T = 80_C (T = 175_C)
C
J
Repetitive Peak Forward Current (T = 175_C, t limited by T
)
108
90
A
IFRM
Ptot
J
p
Jmax
Maximum Power Dissipation @ T = 80_C (T = 175_C)
W
_C
_C
c
J
Minimum Operating Junction Temperature
−40
175
TJMIN
TJMAX
Maximum Operating Junction Temperature
THERMAL PROPERTIES
_C
Storage Temperature range
−40 to 125
Tstg
Vis
INSULATION PROPERTIES
Isolation test voltage, t = 2 sec, 50 Hz
4000
12.7
VRMS
mm
Creepage distance
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
Table 2. RECOMMENDED OPERATING RANGES
Rating
Symbol
Min
Max
(T −25)
Jmax
Unit
_C
Module Operating Junction Temperature
T
J
−40
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
V
V
V
V
V
V
= 0 V, V = 1200 V
–
1.40
–
–
500
2.30
–
ICES
ꢀ
A
GE
GE
GE
CE
= 15 V, I = 200 A, T = 25_C
Collector−Emitter Saturation Voltage
1.86
2.00
5.52
−
V
VCE(sat)
C
J
= 15 V, I = 200 A, T = 175_C
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
= V , I = 6 mA
4.80
–
6.50
500
1450
V
nA
V
VGE(TH)
IGES
GE
GE
GE
CE
C
= 20 V, V = 0 V
CE
Breakdown Voltage
= 0 V, I = 1 mA
1200
1400
B
VCES
C
T = 25_C
ns
Turn−on Delay Time
Rise Time
–
–
–
–
–
302
102
923
59
–
–
–
–
–
td(on)
tr
J
V
CE
= 350 V, I = 170 A V = −5/+15 V,
C GE
R
= 10 ꢁ
G
Turn−off Delay Time
Fall Time
td(off)
tf
Turn−on Switching Loss per Pulse
5.1
mJ
Eon
Eoff
Turn−off Switching Loss per Pulse
–
5.4
–
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE IGBT CHARACTERISTICS
T = 125_C
ns
Turn−on Delay Time
Rise Time
–
–
–
–
–
276
97
–
–
–
–
–
td(on)
tr
J
V
CE
= 350 V, I = 170 A V = −5/+15 V,
C
GE
R
= 10 ꢁ
G
Turn−off Delay Time
Fall Time
997
99
td(off)
tf
Turn−on Switching Loss per Pulse
5.4
mJ
pF
Eon
Eoff
Turn−off Switching Loss per Pulse
Input Capacitance
–
–
–
7.9
35615
700
–
–
–
V
= 25 V. V = 0 V
Cies
Coes
CE
GE
f = 100 kHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
–
–
–
530
1706.4
0.24
–
–
–
Cres
Qg
V
CE
= 600 V, I = 200 A, V = 15 V
nC
C
GE
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 ꢀ m,
ꢂ = 2.87 W/mK
Thermal Resistance − chip−to−case
RthJH
RthJC
–
0.13
–
NEUTRAL POINT FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 650 V
IR
–
1.2
–
–
100
2.7
–
ꢀ
A
R
I = 100 A, T = 25_C
VF
1.48
1.90
26.6
308
V
F
J
I = 100 A, T = 175_C
F
J
T = 25_C
Reverse Recovery Time
–
–
ns
nC
trr
Qrr
J
V
= 350 V, I = 170 A V = −5/+15 V,
C GE
= 10 ꢁ
CE
Reverse Recovery Charge
–
–
R
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
16.8
1659
34.5
25.8
294
–
A
IRRM
di/dt
Err
–
–
A/ꢀ s
ꢀ J
–
–
T = 125_C
Reverse Recovery Time
–
–
ns
trr
J
V
CE
V
GE
= 350 V, I = 170 A
C
Reverse Recovery Charge
–
–
nC
Qrr
= −5/+15V, R = 10 ꢁ
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
18.0
1672
35.2
0.54
0.43
–
A
IRRM
di/dt
Err
–
–
A/ꢀ s
ꢀ J
–
–
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 ꢀ m,
ꢂ = 2.87 W/mK
Thermal Resistance − chip−to−case
–
–
RthJH
RthJC
–
–
NEUTRAL POINT IGBT CHARACTERISTICS
Collector−Emitter Cutoff Current
V
V
V
V
V
V
= 0 V, V = 650 V
–
0.8
–
–
300
2.05
–
ICES
ꢀ
A
GE
GE
GE
CE
= 15 V, I = 150 A, T = 25_C
Collector−Emitter Saturation Voltage
1.36
1.50
4.03
−
V
VCE(sat)
C
J
= 15 V, I = 150 A, T = 175_C
C
J
Gate−Emitter Threshold Voltage
Gate Leakage Current
= V , I = 1.2 mA
3.5
–
6.4
300
−
V
nA
V
VGE(TH)
IGES
GE
GE
GE
CE C
= 20 V, V = 0 V
CE
Breakdown Voltage
= 0 V, I = 1 mA
650
−
B
VCES
C
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
NEUTRAL POINT IGBT CHARACTERISTICS
T = 25_C
ns
Turn−on Delay Time
Rise Time
–
–
–
–
–
94
45
–
–
–
–
–
td(on)
tr
J
V
CE
= 350 V, I = 170 A V = −5/+15 V,
C GE
R
= 10 ꢁ
G
Turn−off Delay Time
Fall Time
224
22
td(off)
tf
Turn−on Switching Loss per Pulse
3.1
mJ
ns
Eon
Eoff
Turn off Switching Loss per Pulse
–
2.4
–
T = 125_C
Turn−on Delay Time
Rise Time
–
–
–
–
–
92
51
–
–
–
–
–
td(on)
tr
J
V
= 350 V, I = 170 A V = −5/+15 V,
C GE
CE
G
R
= 10 ꢁ
Turn−off Delay Time
Fall Time
244
19
td(off)
tf
Turn−on Switching Loss per Pulse
4.7
mJ
pF
Eon
Eoff
Turn off Switching Loss per Pulse
Input Capacitance
–
–
–
3.0
9316
249
–
–
–
V
= 25 V, V = 0 V, f = 100 kHz
Cies
Coes
CE
CE
GE
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
–
–
–
34
–
–
–
Cres
Qg
V
= 480 V, I = 80 A, V = 15 V
300.9
0.50
nC
C
GE
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 ꢀ m,
ꢂ = 2.87 W/mK
RthJH
RthJC
Thermal Resistance − chip−to−case
–
0.36
–
HALF BRIDGE FREEWHEEL DIODE CHARACTERISTICS
Diode Reverse Leakage Current
Diode Forward Voltage
V
= 1200 V
IR
–
1.6
–
–
100
3.6
–
ꢀ A
R
I =150 A, T = 25_C
VF
2.71
2.00
62
V
F
J
I = 150 A, T = 175_C
F
J
T = 25_C
Reverse Recovery Time
–
–
ns
nC
trr
Qrr
J
V
= 350 V, I = 170 A V = −5/+15 V,
C GE
= 10 ꢁ
CE
Reverse Recovery Charge
–
4700
144
–
R
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
–
A
IRRM
di/dt
Err
–
4017
849
–
A/ꢀ s
ꢀ J
–
–
T = 125_C
Reverse Recovery Time
–
107
–
ns
trr
J
V
CE
= 350 V, I = 170 A V = −5/+15 V,
C GE
Reverse Recovery Charge
–
12510
216
–
nC
Qrr
R
= 10 ꢁ
G
Peak Reverse Recovery Current
Peak Rate of Fall of Recovery Current
Reverse Recovery Energy
–
–
A
IRRM
di/dt
Err
–
3815
2647
0.54
0.40
–
A/ꢀ s
ꢀ J
–
–
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 ꢀ m,
ꢂ = 2.87 W/mK
–
–
RthJH
RthJC
Thermal Resistance − chip−to−case
–
–
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
HALF BRIDGE INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
V
F
1.05
1.93
1.29
2.80
V
I = 7 A, T = 25_C
F
J
I = 7 A, T = 175_C
−
−
F
J
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness < 100 ꢀ m,
–
–
1.71
1.52
–
–
R
R
thJH
thJC
ꢂ = 2.87 W/mK
Thermal Resistance − chip−to−case
NEUTRAL POINT INVERSE DIODE CHARACTERISTICS
Diode Forward Voltage
V
F
1.3
2.35
1.50
3.2
V
I = 30 A, T = 25_C
F
J
I = 30 A, T = 175_C
−
−
F
J
°C/W
°C/W
Thermal Resistance − chip−to−heatsink Thermal grease, Thickness 100 ꢀ m,
–
–
1.21
1.02
–
–
R
thJH
thJC
ꢂ
=
2
.
8
7
W
/
m
K
Thermal Resistance − chip−to−case
R
THERMISTOR CHARACTERISTICS
Nominal resistance
−
−
22
1486
−
−
−
5
−
−
−
−
kQ
Q
R
25
T = 100_C
Nominal resistance
R
100
Deviation of R25
R/R
−5
−
%
Power dissipation
P
200
2
mW
mW/K
K
D
Power dissipation constant
−
B(25/50), tolerance 3%
B(25/100), tolerance 3%
B−value
B−value
−
3950
3998
−
K
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Marking
Package
Shipping
NXH200T120H3Q2F2SG
NXH200T120H3Q2F2SG
Q2PACK − Case 180AK
12 Units / Blister Tray
(Pb−Free and Halide−Free)
NXH200T120H3Q2F2STG
NXH200T120H3Q2F2STG
Q2PACK − Case 180AK
12 Units / Blister Tray
(Pb−Free and Halide−Free)
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
350
300
250
200
150
100
50
350
300
T
= 25°C
J
T
= 175°C
J
250
200
150
100
50
VGE = 20 V
VGE = 20 V
VGE = 11 V
VGE = 11 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
V
1.0
1.5
2.0
2.5
V
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR− EMITTER VOLTAGE (V)
CE
CE
Figure 2. Typical Output Characteristics
Figure 3. Typical Output Characteristics
350
300
250
200
150
100
50
200
180
160
140
120
100
80
T
= 25°C
J
T
= 175°C
T
= 175°C
J
J
T
= 25°C
J
60
40
20
0
0
0
2
4
6
8
10
12
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
, GATE −EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
GE
Figure 4. Typical Transfer Characteristics
Figure 5. Typical Diode Forward Characteristics
16
12
10
8
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
V
= +15 V, −5 V
= 350 V
GE
GE
CE
CE
14
12
10
8
R
G
= 10 ꢁ
G
25°C
125°C
25°C
125°C
6
6
4
4
2
2
0
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
IC (A)
IC (A)
Figure 6. Typical Turn ON Loss vs. IC
Figure 7. Typical Turn OFF Loss vs. IC
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
1200
1000
800
600
400
200
0
350
25°C
125°C
T
d(on)
300
250
T
d(off)
200
150
100
50
V
V
R
= +15 V, −5 V
GE
= 350 V
CE
t
r
= 10 ꢁ
G
V
V
R
= +15 V, −5 V
GE
= 350 V
CE
= 10 ꢁ
G
25°C
125°C
t
f
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. Typical Turn−Off SwitchingTime vs. IC
Figure 9. Typical Turn−On Switching Time vs. IC
0.4
50
40
30
20
10
0
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
GE
25°C
125°C
0.35
0.3
V
CE
CE
R
G
G
25°C
125°C
0.25
0.2
0.15
0.1
0.05
0
0
50
100
150
200
250
300
350
0
50
100
I
150
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
C
Figure 10. Typical Reverse Recovery Time vs. IC
Figure 11. Typical Reverse Recovery Charge vs. IC
2000
22
20
1600
1200
800
18
16
14
12
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
GE
10
8
CE
CE
G
G
400
25°C
125°C
25°C
125°C
6
4
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 12. Typical Reverse Recovery Peak Current vs. IC
Figure 13. Typical Diode Current Slope vs. IC
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
40
40
35
30
25
20
15
10
V
V
R
= +15 V, −5 V
= 350 V
= 170 ꢁ
GE
35
30
25
20
15
10
CE
G
25°C
125°C
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
CE
G
5
25°C
5
125°C
0
0
0
50
100
150
200
250
300
350
10
15
20
25
30
35
I
C
(A)
R (ꢁ)
G
Figure 14. Typical Reverse Recovery Energy vs. IC
Figure 15. Typical Reverse Recovery Energy Loss
vs. RG
20
16
12
15
12
V
V
= +15 V, −5 V
= 350 V
= 170 A
V
V
= +15 V, −5 V
= 350 V
GE
CE
GE
CE
I
C
I = 170 A
C
25°C
125°C
25°C
125°C
9
8
6
3
0
4
0
5
10
15
20
(ꢁ)
25
30
35
5
10
15
20
(ꢁ)
25
30
35
R
R
G
G
Figure 16. Typical Turn ON Loss vs. RG
Figure 17. Typical Turn OFF vs. RG
900
3000
V
V
= +15 V, −5 V
= 350 V
GE
V
V
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
800
700
600
500
400
CE
T
d(on)
2500
2000
I = 170 A
C
I
C
T
d(off)
25°C
125°C
25°C
125°C
1500
1000
500
300
200
100
t
r
t
f
0
0
5
5
10
15
20
R , GATE RESISTOR (ꢁ)
G
25
30
35
10
15
20
25
30
35
R
, GATE RESISTOR (ꢁ)
G
Figure 18. Typical Turn ON Switching Time vs. RG
Figure 19. Typical Turn OFF Switching Time vs.
RG
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
50
45
40
35
30
25
20
15
10
350
V
V
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
300
250
200
150
100
50
I
C
25°C
125°C
V
V
I
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
C
25°C
125°C
0
5
10
15
20
25
30
35
5
10
15
20
R , GATE RESISTOR (ꢁ)
G
25
30
35
R
, GATE RESISTOR (ꢁ)
G
Figure 20. Typical Reverse Recovery Energy vs. IC
Figure 21. Typical Reverse Recovery Energy Loss
vs. RG
1900
1700
1500
1300
1100
900
19
17
15
13
11
V
V
= +15 V, −5 V
= 350 V
= 170 A
V
V
= +15 V, −5 V
= 350 V
GE
CE
GE
CE
I
C
I = 170 A
C
25°C
125°C
9
700
7
5
500
5
10
15
R
20
, GATE RESISTOR (ꢁ)
G
25
30
35
5
10
15
R
20
25
30
35
, GATE RESISTOR (ꢁ)
G
Figure 22. Typical Turn ON Loss vs. RG
Figure 23. Typical Turn OFF vs. RG
15
V
= 600 V
CE
I
C
= 200 A
12
9
6
3
0
0
150 300 450 600 750 900 1050 1200 1350 1500 1650 1800 1950
Charge (nC)
Figure 24. Gate Voltage vs. Gate Charge
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10
NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
10
1
0.1
0.01
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 25. IGBT Transient Thermal Impedance
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 26. Diode Transient Thermal Impedance
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − HALF BRIDGE IGBT AND NEUTRAL POINT DIODE
500
450
400
1000
100
50 ms
350
300
250
200
150
100
50
1 ms
100 ms
10
1
dcoperation
Single Nonrepetitive
Pulse TC = 25°C
V
=+15 V −5 V, T = T
−25°C
Jmax
GE
J
Curves must be derated
linearly with increase in temperature
0.1
0
1.000
10.000
V , COLLECTOR−EMITTER VOLTAGE (V)
CE
100.000
1000.000
10000.000
0
200
400
600
800
1000
1200
1400
V
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 27. HB IGBT RBSOA
Figure 28. HB IGBT FBSOA
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
250
250
200
150
100
50
T
= 25°C
J
T
= 175°C
J
200
150
100
50
V
= 20 V
GE
V
= 20 V
GE
V
= 11 V
GE
V
= 11 V
GE
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0
0.5
1.0
1.5
2.0
2.5
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 29. Typical Output Characteristics
Figure 30. Typical Output Characteristics
250
200
150
100
50
200
180
160
140
120
100
80
T
= 175°C
T
= 175°C
J
J
T
= 25°C
J
T
= 25°C
J
60
40
20
0
0
0
1
2
3
4
5
6
7
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
, GATE−EMITTER VOLTAGE (V)
V , FORWARD VOLTAGE (V)
F
GE
Figure 31. Typical Transfer Characteristics
Figure 32. Typical Diode Forward Characteristics
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12
NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
8
7
6
5
4
3
2
1
0
7
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
GE
CE
CE
6
5
4
3
2
1
0
G
G
25°C
125°C
25°C
125°C
0
50
100
150
200
(A)
250
300
350
0
50
100
150
200
(A)
250
300
350
I
C
I
C
Figure 33. Typical Turn ON Loss vs. IC
Figure 34. Typical Turn OFF Loss vs. IC
120
400
300
200
100
0
V
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
25°C
125°C
25°C
125°C
GE
GE
V
R
CE
CE
100
80
G
G
T
d(on)
T
d(off)
t
60
40
r
20
0
t
f
0
50
100
150
200
250
300
350
0
50
100
150
I , COLLECTOR CURRENT (A)
C
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
Figure 35. Typical Turn ON Switching Time vs. IC
Figure 36. Typical Turn OFF Switching Time vs. IC
140
120
20
18
16
14
12
10
8
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
CE
G
25°C
125°C
100
80
60
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
6
CE
40
20
0
G
4
25°C
125°C
2
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 37. Typical Reverse Recovery Time vs. IC
Figure 38. Typical Reverse Recovery Charge vs. IC
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13
NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
354
304
254
204
154
104
54
5000
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
CE
4500
4000
3500
3000
2500
2000
1500
1000
G
25°C
125°C
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
GE
CE
G
25°C
125°C
4
0
50
100
150
I , COLLECTOR CURRENT (A)
C
200
250
300
350
0
50
100
150
200
250
300
350
I
C
, COLLECTOR CURRENT (A)
Figure 39. Typical Turn ON Loss vs. IC
Figure 40. Typical Turn OFF Loss vs. IC
5
4.5
4
3
V
V
R
= +15 V, −5 V
= 350 V
= 10 ꢁ
V
V
= +15 V, −5 V
= 350 V
GE
25°C
125°C
GE
CE
CE
2.5
2
I = 170 A
C
G
25°C
125°C
3.5
3
1.5
1
2.5
2
1.5
1
0.5
0
0.5
0
0
50
100
150
200
250
300
350
5
10
15
20
(ꢁ)
25
30
35
I
C
(A)
R
G
Figure 41. Typical Turn ON Switching Time vs. IC
Figure 42. Typical Turn OFF Switching Time vs. IC
10
9
8
7
6
5
4
3
2
1
6
V
V
= +15 V, −5 V
= 350 V
= 170 A
V
V
= +15 V, −5 V
= 350 V
GE
CE
GE
CE
5
4
3
2
1
0
I
C
I = 170 A
C
25°C
125°C
25°C
125°C
0
5
10
15
20
(ꢁ)
25
30
35
5
10
15
20
(ꢁ)
25
30
35
R
R
G
G
Figure 43. Typical Turn ON Loss vs. RG
Figure 44. Typical Turn OFF vs. RG
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
600
250
200
V
V
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
500
I
C
25°C
125°C
T
T
d(off)
d(on)
25°C
125°C
400
300
150
100
50
200
100
t
r
t
f
0
0
5
10
15
20
25
30
35
5
10
15
20
25
30
35
R , GATE RESISTOR (ꢁ)
g
R , GATE RESISTOR (ꢁ)
g
Figure 45. Typical Turn ON Switching Time vs. RG
Figure 46. Typical Turn OFF Switching Time vs. RG
195
175
155
135
115
95
14
12
10
V
V
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
I
C
25°C
125°C
V
V
= +15 V, −5 V
= 350 V
= 170 A
GE
CE
8
6
4
I
C
25°C
125°C
75
55
2
0
35
15
5
10
15
20
25
30
35
5
10
15
20
25
30
35
R , GATE RESISTOR (ꢁ)
g
R , GATE RESISTOR (ꢁ)
g
Figure 47. Typical Reverse Recovery Time vs. RG
Figure 48. Typical Reverse Recovery Charge vs.
RG
255
205
155
105
55
4500
4000
3500
3000
V
V
I
= +15 V, −5 V
= 350 V
= 170 A
V
V
I
= +15 V, −5 V
= 350 V
= 170 A
GE
GE
CE
CE
C
C
25°C
125°C
2500
2000
1500
1000
500
5
5
10
15
20
25
30
35
5
10
15
20
25
30
35
R , GATE RESISTOR (ꢁ)
g
R , GATE RESISTOR (ꢁ)
g
Figure 49. Typical Reverse Recovery Peak Current
vs. RG
Figure 50. Typical Di/Dt vs. RG
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
15
V
= 480 V
CE
I
C
= 80 A
12
9
6
3
0
0
25 50 75 100 125 150 175 200 225 250 275 300 325 350
Charge (nC)
Figure 51. Gate Voltage vs. Gate Charge
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 52. IGBT Transient Thermal Impedance
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 53. Diode Transient Thermal Impedance
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT IGBT AND HALF BRIDGE DIODE
1000
400
300
200
100
0
100
10
1
50 ms
1 ms
100 ms
dc operation
Single Nonrepetitive
Pulse T = 25°C
C
Curves must be derated
linearly with increase in temperature
V
= +15 V −5 V, T = T
−25°C
Jmax
GE
J
0.1
0
200
400
600
800
1.000
10.000
100.000
1000.000
10000.000
V
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 54. NP IGBT RBSOA
Figure 55. NP IGBT FBSOA
TYPICAL CHARACTERISTICS − HALF BRIDGE INVERSE DIODE
200
180
160
140
T
= 175°C
J
120
100
80
60
40
20
0
T
= 25°C
J
0
1
2
3
4
5
6
7
8
V , FORWARD VOLTAGE (V)
F
Figure 56. Diode Forward Characteristic
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 57. Diode Transient Thermal Impedance
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NXH200T120H3Q2F2SG, NXH200T120H3Q2F2STG
TYPICAL CHARACTERISTICS − NEUTRAL POINT INVERSE DIODE
200
T
= 175°C
J
180
160
140
120
100
80
T
= 25°C
J
60
40
20
0
0
1
2
3
4
5
6
V , FORWARD VOLTAGE (V)
F
Figure 58. Diode Forward Characteristic
10
1
0.1
single pulse
@1% duty cycle
@2% duty cycle
@5% duty cycle
@10% duty cycle
@20% duty cycle
@50% duty cycle
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse on time [s]
Figure 59. Diode Transient Thermal Impedance
TYPICAL CHARACTERISTICS – THERMISTOR
Figure 60. Thermistor Characteristics
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18
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PIM56, 93x47 (SOLDER PIN)
CASE 180AK
ISSUE B
DATE 08 NOV 2017
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXXXXXXG
ATYYWW
XXXXX = Specific Device Code
G
= Pb−Free Package
AT
= Assembly & Test Site Code
YYWW= Year and Work Week Code
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON63482G
PIM56 93X47 (SOLDER PIN)
PAGE 1 OF 1
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